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    40B SOT23 Search Results

    40B SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    40B SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    contactor coils 24v

    Abstract: MAX998 contactor coils AN1792 APP1792 218040B
    Text: Maxim > App Notes > AMPLIFIER AND COMPARATOR CIRCUITS MISCELLANEOUS CIRCUITS Keywords: self oscillating, contact driver, hold power, step-down converter, solenoid, switches, relays, standby inverter, Allbright 2180-40B contactor Dec 03, 2002 APPLICATION NOTE 1792


    Original     		PDF 2180-40B com/an1792 MAX998: AN1792, APP1792, Appnote1792, contactor coils 24v MAX998 contactor coils AN1792 APP1792 218040B

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    40b sot23

    Abstract: ZRA400 ZRA400A01 ZRA400A02 ZRA400A03 ZRA400F01 ZRA400F02 ZRA400F03 ZRA400N801 ZRA400N802
    Text: PRECISION 4.0 VOLT MICROPOWER VOLTAGE REFERENCE ZRA400 ISSUE 1 - JANUARY 1996 DEVICE DESCRIPTION The ZRA400 uses a bandgap circuit design to achieve a precision micropower voltage reference of 4.096 volts. The device is available in small outline surface mount packages, ideal


    Original     		PDF ZRA400 ZRA400 ZRA400F03 ZRA400Y03 ZRA40003 ZRA400Y02 ZRA40002 ZRA400Y01 40b sot23 ZRA400A01 ZRA400A02 ZRA400A03 ZRA400F01 ZRA400F02 ZRA400F03 ZRA400N801 ZRA400N802

    ZRC400F01

    Abstract: ZRC400F01ta
    Text: Not Recommended for New Design Please Use ZRC400F01TA /02TA PRECISION 4.0 VOLT MICROPOWER VOLTAGE REFERENCE ZRA400 ISSUE 1 - JANUARY 1996 DEVICE DESCRIPTION The ZRA400 uses a bandgap circuit design to achieve a precision micropower voltage reference of 4.096 volts. The device is available


    Original     		PDF ZRC400F01TA /02TA ZRA400 15ppm/ ZRA400 ZRA400A03 ZRA400A02 ZRC400F01

    ZRA400

    Abstract: ZRA400A01 ZRA400A02 ZRA400A03 ZRA400F01 ZRA400F02 ZRA400F03 ZRA400N801 ZRA400N802 ZRA400N803
    Text: PRECISION 4.0 VOLT MICROPOWER VOLTAGE REFERENCE ZRA400 ISSUE 2 - MARCH 1998 DEVICE DESCRIPTION FEATURES The ZRA400 uses a bandgap circuit design to achieve a precision micropower voltage reference of 4.096 volts. The device is available in small outline surface mount


    Original     		PDF ZRA400 ZRA400 15ppm/ ZRA400A03 ZRA40003 ZRA400R03 ZRA400R3 ZRA400A02 ZRA400A01 ZRA400A02 ZRA400A03 ZRA400F01 ZRA400F02 ZRA400F03 ZRA400N801 ZRA400N802 ZRA400N803

    smd transistor 41B

    Abstract: 5251B SMD 41B sot23 5241B zener 35b smd MARKING 8g 5233B 81F smd CMBZ-5245B SMD marking 8M zener
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B C-120 smd transistor 41B 5251B SMD 41B sot23 5241B zener 35b smd MARKING 8g 5233B 81F smd CMBZ-5245B SMD marking 8M zener

    ic 41b sot23

    Abstract: 46B smd
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE


    Original     		PDF OT-23 CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B C-120 ic 41b sot23 46B smd

    smd transistor 41B

    Abstract: SMD 41B sot23 5241B 5252B CMBZ-5251B smd 41B 5233B 5245B CMBZ-5245B CMBZ5230B
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE


    Original     		PDF OT-23 CMBZ52XX CMBZ5230B CMBZ5239B CMBZ5248B C-120 smd transistor 41B SMD 41B sot23 5241B 5252B CMBZ-5251B smd 41B 5233B 5245B CMBZ-5245B CMBZ5230B

    PWM controller sot23-6

    Abstract: MCP1640 mcp1624 regulator pwm solar DS22234 mcp1640c DS01308 PIC PWM PIC16F1XXX pwm pic
    Text: MCP1640 & MCP1624/3 Voltage Boost Regulators Advanced Performance and Integration with Industry Leading Low Power Summary Battery powered applications have historically been a versatile market lending itself to a multitude of products in consumer, medical, personal care and entertainment.


    Original     		PDF MCP1640 MCP1624/3 DS41437A DS41437A* PWM controller sot23-6 MCP1640 mcp1624 regulator pwm solar DS22234 mcp1640c DS01308 PIC PWM PIC16F1XXX pwm pic

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    MCP1640

    Abstract: MCP1623 pwm pic mcp1624 DM164130-5 PFM SOT23 PWM pic C 1624 pwm PIC12F1XXX DV164131
    Text: MCP1640及MCP1624/3電壓升壓穩壓器 領先業界低功耗的進階效能及整合度 摘要 電池供電的應用一直是多樣化的市場，其中有消費性醫 療、個人照護及娛樂休閒等方面的產品。這些產品都需要智 慧型控制、低功耗及延長電池使用壽命，而且傾向強調體積


    Original     		PDF MCP1640MCP1624/3 MCP1640/1624/1623PIC® MCP1640/1624/1623 MCP1640/1624/162396% MCP1640/1624/1623PIC MCP1640) MCP1624/3) PFM19 MCP1640/40B/1624/1623) MCP1640 MCP1623 pwm pic mcp1624 DM164130-5 PFM SOT23 PWM pic C 1624 pwm PIC12F1XXX DV164131

    MMHZ5270BPT

    Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)


    Original     		PDF OT-23 MMHZ5270BPT GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT

    TRIO R27

    Abstract: MP2307 ecp2-12/22/35/50 PR75A W25P16VSSIG sot23-6 aa3 PT23 SOT-23 pr77a W25P32VSFIG PR73A
    Text: LatticeECP2 Standard Evaluation Board User’s Guide May 2007 Revision: ebdug18_01.3 LatticeECP2 Standard Evaluation Board User’s Guide Lattice Semiconductor Introduction The LatticeECP2 Standard Evaluation Board is a complete, integrated design, featuring a LatticeECP2 FPGA and


    Original     		PDF ebdug18 188-pin) 1N5820 GND21 300mA 100uF Si5447DC LMK432BJ226MM-T CC1812 B320A TRIO R27 MP2307 ecp2-12/22/35/50 PR75A W25P16VSSIG sot23-6 aa3 PT23 SOT-23 pr77a W25P32VSFIG PR73A

    pt 4515

    Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7


    Original     		PDF

    ZRA500F03

    Abstract: ZRB500F01 ZRA500F01 40b sot23 ZRC330F01 ZRA400F01 ZRA400F02 ZRA400F03 ZRA500F02 ZRB500F02
    Text: SOT23 PRECISION VOLTAGE REFERENCES Pinout : 1-Floating or connect to pin2 , 2-Anode, 3-Cathode Vr !r M in !r M ax TC Rs M ax Pfot V |iA mA ppm/“C Q mW Code ZRB500F01 4.95/5.05 50 15 50 1.5 330 501 ZRB500F02 4.90/5.10 50 15 50 1.5 330 50H ZRB500F03 4.85/5.15


    OCR Scan     		PDF ZRB500F01 ZRB500F02 ZRB500F03 ZRA500F01 ZRA500F02 ZRA500F03 ZRA400F01 ZRA400F02 ZRA400F03 ZRC330F01 40b sot23

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 • High D C current gain • High collector current • Collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) S M B T A 13 S M B T A 14


    OCR Scan     		PDF Q68000-A6475 Q68000-A6476 OT-23 S3St05

    Untitled

    Abstract: No abstract text available
    Text: • bbSB^Bl Q025flfl4 b33 H A P X N AflER PHILIPS/D ISCR ETE PM BT6428 PM BT6429 b7E D _ _ SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD) plastic envelope intended for application in thick and


    OCR Scan     		PDF Q025flfl4 BT6428 BT6429 PMBT6428 PMBT6429 DPMBT6428

    Untitled

    Abstract: No abstract text available
    Text: PRECISION 4.0 VOLT MICROPO/VER VOLTAGE REFERENCE ZRA400 ISSUE 1 - JANUARY 1996 DEVICECSGHPTOM The ZRA400 uses a bandgap circuit design to achieve a precision m icropow er voltage reference o f4.096 volts. The device is available in small outline surface mount packages, ideal


    OCR Scan     		PDF ZRA400 ZRA400 ZRA400A33 ZRA400A32 2RA40003 ZRA400FD3 ZBA40002 ZRA400FD2 ZRA400R2

    52B zener

    Abstract: 5233B 5241b SMBZ-5250B 47B SOT23 5252B SMBZ-5239B SMBZ-5245B SMBZ5230B SMBZ-5230B
    Text: SMBZ5230 THRU SMBZ5257 SILICON PLANAR ZENER DIODES, 500mW, SOT-23 PACKAGE PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0 2.6 0 .1 4 - * ^ 0.09 0.48 0.38 «a 3 44 2.6 RQ.1 .004 1-° ? 0.89 0,60 0.40 =


    OCR Scan     		PDF SMBZ5230 SMBZ5257 500mW, OT-23 SMBZ5230B SMBZ5239B SMBZ5248B SMBZ5257B= 595-ISIS 52B zener 5233B 5241b SMBZ-5250B 47B SOT23 5252B SMBZ-5239B SMBZ-5245B SMBZ5230B SMBZ-5230B

    PAA 737

    Abstract: MAX6145 ebaa
    Text: 75- 7777: Rev. 0; 12/96 JVWYXAJVX SOT23, Low-Cost, Low-Dropout, 3-Terminal Voltage References General Description Initial accuracy for these devices is ±1%. The output temperature coefficient is typically 15ppm/°C, and guarante ed to be less than 50ppm /°C except


    OCR Scan     		PDF MAXG12S/MAX6141/MAX614S/MAX6150/MAX6160 MAX6125/MAX6141 /MAX6145/MAX6150/MAX6160 200mV MAX61xx translat48 OT-143 PAA 737 MAX6145 ebaa

    NE99532

    Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
    Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­


    OCR Scan     		PDF NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    2SC2037

    Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
    Text: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis­ tors provide the designer with a wide selection of reliable


    OCR Scan     		PDF b427414 NE734 r-31-27 NE73435) 2SC2037 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432