VDR 20-100
Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Text: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs
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MWS5114
1024-Word
200ns
250ns
300ns
MWS5114E3
MWS5114E2
MWS5114E2X
MWS5114E1
MWS5114D3
VDR 20-100
MWS5114
MWS5114D1
MWS5114D2
MWS5114D3
MWS5114D3X
MWS5114E1
MWS5114E2
MWS5114E2X
MWS5114E3
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4045 RAM
Abstract: 7MP4145 IDT7MP4045 IDT7MP4120 IDT7MP4145 IDT7MP4046 7MP4045
Text: IDT7MP4045 IDT7MP4145 256K x 32 CMOS Static RAM Module Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High density 1 megabyte static RAM module IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120 Low profile 64 pin ZIP (Zig-zag In-line vertical Package) or
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IDT7MP4045
IDT7MP4145
IDT7MP4145
IDT7MP4120)
IDT7MP4045
IDT7MP4045/4145
7MP4045
7MP4145
x4033
4045 RAM
IDT7MP4120
IDT7MP4046
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IDT7MP4045
Abstract: IDT7MP4120 IDT7MP4145 7MP4045
Text: IDT7MP4045 IDT7MP4145 256K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 1 megabyte static RAM module IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package)
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IDT7MP4045
IDT7MP4145
IDT7MP4145
IDT7MP4120)
IDT7MP4045
IDT7MP4045/4145
7MP4145
7MP4045
IDT7MP4120
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30 pin simm memory
Abstract: 30 pin simm memory dynamic A9 pin contact IDT7MP4045 IDT7MP4120 IDT7MP4145
Text: IDT7MP4045 IDT7MP4145 256K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 1 megabyte static RAM module IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package)
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IDT7MP4045
IDT7MP4145
IDT7MP4145
IDT7MP4120)
IDT7MP4045
IDT7MP4045/4145
7MP4145
7MP4045
30 pin simm memory
30 pin simm memory dynamic
A9 pin contact
IDT7MP4120
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IDT7MP4045
Abstract: IDT7MP4120 IDT7MP4145 4045 RAM
Text: IDT7MP4045 IDT7MP4145 256K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 1 megabyte static RAM module IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package)
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IDT7MP4045
IDT7MP4145
IDT7MP4145
IDT7MP4120)
IDT7MP4045
IDT7MP4045/4145
7MP4145
7MP4045
IDT7MP4120
4045 RAM
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f244 motorola
Abstract: F84041 Cyrix 486 dx2 Cyrix 486 CS4021 4MB flash bios chip 8 pin 146818 rtc F84045 CS4041 weitek
Text: CS4041 CHIPSet 84041 and 84045 CHIPSet Data Book Revision 1.0 February 1995 P R E L I M I N A R Y Copyright Notice Copyright 1994 and 1995 Chips and Technologies, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc. You may not reproduce, transmit, transcribe,
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CS4041
CS4041
f244 motorola
F84041
Cyrix 486 dx2
Cyrix 486
CS4021
4MB flash bios chip 8 pin
146818 rtc
F84045
weitek
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2114 Ram pinout 18
Abstract: MWS5114 MWS5114-3 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X
Text: MWS5114 S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
MWS5114
MWS5114-2
MWS5114-1
MWS5114-3
2114 Ram pinout 18
MWS5114-3
MWS5114D1
MWS5114D2
MWS5114D3
MWS5114D3X
MWS5114E1
MWS5114E2
MWS5114E2X
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2114 Ram pinout 18
Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Text: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
MWS5114
2114 Ram pinout 18
9114 RAM
2114 static ram
2114 static ram ic
ic 2114
MWS5114E3
9114 static ram
MWS5114-3
2114 4 bit Ram pinout
2114 ram
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5730 led
Abstract: 5730
Text: Date: 16.06.2014 - Rev. 0.2 - Doc.: BLED573005DS Type 5730 - 0,5W 1. Desciption INDEX 1. Description 2. Absolute Maximum Ratings 3. Electro-Optical Characteristics General: Type Viewing angle: Size: RoHs compliant: SMD-LED 120° 5,7mm x 3,0mm x 0,8mm yes Material:
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BLED573005DS
3900K-4100K
2900K-3100K
2600K-2800K
5730 led
5730
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4045 RAM
Abstract: No abstract text available
Text: INTEGRATE» DE VI CE 47E ì> WM 4025771 0G10073 h • IDT IDT7MP4045 256K x 32 BiCMOS/CMOS STATIC RAM MODULE -44-ZvW Integrated Device Technology, Inc. FEATURES: DESCRIPTION: Th e ID T 7M P 4045 is a 25 6K x 3 2 static RA M module constructed on an epoxy laminate FR -4 substrate using 8
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0G10073
IDT7MP4045
-44-ZvW
2S771
0Q100
IDT7MP404S
4045 RAM
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bma 023
Abstract: TA 7061 IDT7MP4045 A256K
Text: ggai'x \ 256K X 32 BiCMOS/CMOS STATIC RAM MODULE y IDT7MP4045 I n te g r a te d D ev ic e T e c h n o lo g y , In c . FEATURES: DESCRIPTION: • High de nsity 8 m egabit static RAM m odule The ID T7M P 4045 is a 25 6 K x 32 sta tic RAM module constructed on an epoxy lam inate FR-4 sub strate using 8
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256Kx
IDT7MP4045
I/016
I/017
I/018
I/019
I/O20
I/021
I/O22
I/023
bma 023
TA 7061
IDT7MP4045
A256K
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Untitled
Abstract: No abstract text available
Text: C O S /M O S INTEGRATED CIRCUIT ^ o 45 B / / hcc/hcf «m5B COS/MOS 21-STAGE COUNTER • • • • • • • • V E R Y LOW O PE R ATIN G D IS S IP A T IO N 1 mW TY P. ; @ V DD= 5V, f 0 = 1 MHz O U TPU T D R IV E R S W ITH SIN C K OR SOURCE C A P A B IL IT Y . . . . 7 m A (TYP.) @ 'V DD= 5V
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21-STAGE
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4045 RAM
Abstract: No abstract text available
Text: IDT7MP4045 IDT7MP4145 256K x 32 CMOS STATIC RAM MODULE DESCRIPTION: • High density 1 megabyte static RAM module IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package) or 64 pin SIMM (Single In-line Memory Module) for
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IDT7MP4145
IDT7MP4120)
IDT7MP4045
IDT7MP4145
7MP4045
7MP4145
2S771
4045 RAM
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intel 8042 microcontroller, ibm pc
Abstract: Cyrix 486 dx2 S042E SCHEMATIC ATI graphics card F84041 Cyrix 486 F84045 A2023 cs4021 chips technologies ide
Text: C r ï i r i b _ Subject to change without notice CS4041 CHIPSet - Single bank or dual bank word interleaved cache - Multiple timing modes supported for cost performance tradeoff • Power Management - SMI support - Many power management features can be utilized
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CS4041
CS4041
intel 8042 microcontroller, ibm pc
Cyrix 486 dx2
S042E
SCHEMATIC ATI graphics card
F84041
Cyrix 486
F84045
A2023
cs4021
chips technologies ide
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Untitled
Abstract: No abstract text available
Text: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple mentary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
S5114
MWS5114-3
MWS5114-2
MWS5114-1
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Untitled
Abstract: No abstract text available
Text: Random-Access Memories RAMs MWS5114 a6 — I I8 “ VDD A5 — 2 I7 — A? * 4 - 3 I6 a 3 — 4 I - «8 I5 - A g CMOS 1024-Word by 4-Bit LSI Static RAM Ao — 5 I4 — I/O t Features: A| — 6 I3 — 1 / 0 2 7 I2 - I / O 3 • Fully static operation ■ In d u s try s ta n d a rd 1024 x 4 p in o u t (sam e as p in o u ts fo r 6514, 2114,
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MWS5114
1024-Word
30982R
92CS-3III4R2
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Untitled
Abstract: No abstract text available
Text: 4bE D HARRIS SEMICOND SECTOR • M302571 □□3^132 fl ■ HAS MWS5114 HARRIS S E M I C O N D U C T O R - 4 < a ~ Z '5 - 0 2 1024-Word x 4-Bit LSI Static RAM February 1992 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4 bit static random access
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M302571
MWS5114
1024-Word
MWS5114
MWS5114-3
MWS5114-2
MWS5114-1
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Untitled
Abstract: No abstract text available
Text: MWS5114 CSD H A R R IS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM Fe b ru a ry 1992 Features Description • Fully Static Operation T h e M W S 5 1 14 is a 1024 w o rd b y 4 b it s ta tic random a c c e s s m e m o ry th a t uses th e io n -im p la n te d s ilic o n g a te co m ple
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MWS5114
1024-Word
MWS5114-2
MWS5114-1
MWS5114-3
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memory ic 2114
Abstract: 5114E
Text: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate com ple mentary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
S5114
S5114-3
S5114-2
S5114-1
memory ic 2114
5114E
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Untitled
Abstract: No abstract text available
Text: IDT7MP4045 IDT7MP4145 2 5 6 K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. DESCRIPTION: • High density 1 megabyte static RAM module IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120 The IDT7MP4045/4145 is a 256K x 32 static RAM module
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IDT7MP4045
IDT7MP4145
IDT7MP4145
IDT7MP4120)
IDT7MP4045/4145
IDT7MP4045/7MP4145
7MP4045
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4045 static ram
Abstract: 4045 RAM matrixes
Text: MA T R A M H S 4bE PREVIEW D Eü Söt.ö4 Sb O Ö G O ti3 ei T U S MMHS MAY 1988 H lln .OPEN ASIC DATA SHEET M BM SERIES COMPOSITE ARRAYS WITH MEMORY BLOCKS F E & T W iS • ADVANCED SILICON GATE CM O S PROCESS: -T W O METAL LAYERS - 2 MICRON DRAWNS CHANNEL LENGTH
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Untitled
Abstract: No abstract text available
Text: 256K x 32 CMOS STATIC RAM MODULE IDT7MP4045 IDT7MP4145 Integrated D evice Technology, Inc. DESCRIPTION: • High density 1 m egabyte static RAM module IDT7M P4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package)
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IDT7MP4045
IDT7MP4145
P4145
IDT7MP4120)
P4045
P4145
IDT7MP4045/4145
QQ21233
IDT7MP4045/7MP4145
7MP4145
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Untitled
Abstract: No abstract text available
Text: INTEGRATED DEVICE 3ÛE D H 4Ö2S771 GÜQ71ba _ B • IDT 2 3 - lif PRELIMINARY IDT7MP4045 256K X 32 CMOS STATIC RAM MODULE NOTICE Integrated Device Technology, Inc. SEE ORDER OF D ATA FOR ERRATA IN F O R M A T IO N
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2S771
Q71ba
IDT7MP4045
P4045
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Untitled
Abstract: No abstract text available
Text: IDT7MP4045 IDT7MP41 45 256K x 32 CM OS STATIC RAM M OD UL E DESCRIPTION: The ID T7M P4045/4145 is a 256K x 32 static RAM module constructed on an epoxy lam inate FR-4 substrate using 8 256K x 4 static RAM s in plastic SQJ packages. Availability ot tour chip select lines (one tor each group ot two RAMs)
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IDT7MP4045
IDT7MP41
P4145
P4120)
P4045
P4145
P4045/4145
7MP4145
7MP4045
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