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    Untitled

    Abstract: No abstract text available
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


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    NJT4031N, NJV4031NT1G, NJV4031NT3G NJT4031N/D PDF

    4031n

    Abstract: NJT4031N NJT4031NT1G NJT4031NT3G BD 645/BD 650/PADI SOT 23
    Text: NJT4031N Preferred Device Bipolar Power Transistors NPN Silicon Features •ăCollector -Emitter Sustaining Voltage - http://onsemi.com VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc •ăHigh DC Current Gain = 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc


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    NJT4031N OT-223 OT-223 4031NG 4031N NJT4031N/D 4031n NJT4031N NJT4031NT1G NJT4031NT3G BD 645/BD 650/PADI SOT 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Epoxy Meets UL 94, V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring • NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS Unique Site and Control Change Requirements; AEC−Q101


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    NJT4031N, NJV4031NT1G, NJV4031NT3G AEC-Q101 NJT4031N/D PDF

    4031N

    Abstract: No abstract text available
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Epoxy Meets UL 94, V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V NJV Prefix for Automotive and Other Applications Requiring


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    NJT4031N, NJV4031NT1G, NJV4031NT3G AEC-Q101 NJT4031N/D 4031N PDF

    4031N

    Abstract: NJV4031NT1G NJV4031NT3G
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc


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    NJT4031N, NJV4031NT1G, NJV4031NT3G OT-223 AEC-Q101 NJT4031N/D 4031N NJV4031NT1G PDF

    4031N

    Abstract: NJT4031N NJT4031NT1G NJT4031NT3G
    Text: NJT4031N Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage −


    Original
    NJT4031N OT-223 OT-223 NJT4031N/D 4031N NJT4031N NJT4031NT1G NJT4031NT3G PDF