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    400V 6A TRANSISTOR Search Results

    400V 6A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJP4013ASP-00#J5 Renesas Electronics Corporation IGBT 400V 150A SOP-8 Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    400V 6A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g6n50e

    Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR


    Original     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1 O-251AA O-252AA g6n50e G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S

    g6n50e

    Abstract: HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S G6N40E G6N50
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage


    Original     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1 O-251AA O-252AA g6n50e HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S G6N40E G6N50

    G6N50E1D

    Abstract: hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E
    Text: HGTP6N40E1D, HGTP6N50E1D S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER COLLECTOR GATE • Latch Free Operation • TFALL: < 1.0µs • High Input Impedance


    Original     		PDF HGTP6N40E1D, HGTP6N50E1D O-220AB 150oC. 150oC 100oC -50oC G6N50E1D hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP6N40CF/FQPF6N40CF

    MOSFET 400V TO-220

    Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF MOSFET 400V TO-220 MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series

    FQPF Series

    Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF FQPF Series MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP6N40CF/FQPF6N40CF FQP6N40CF/FQPF6N40CF

    FQP6N40CF

    Abstract: No abstract text available
    Text: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		PDF FQP6N40CF FQP6N40CF

    Untitled

    Abstract: No abstract text available
    Text: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		PDF FQP6N40CF FQP6N40CF

    FQB6N40CF

    Abstract: FQB6N40CFTM
    Text: FRFET TM FQB6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)


    Original     		PDF FQB6N40CF FQB6N40CF FQB6N40CFTM

    RURP640CC

    Abstract: RURP650CC RURP660CC
    Text: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC


    Original     		PDF RURP640CC, RURP650CC, RURP660CC O-220AB 175oC RURP660CC RURP640CC RURP650CC

    RURP640CC

    Abstract: RURP650CC RURP660CC FAIRCHILD to220ab package
    Text: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes January 2002 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC TO-220AB . +175oC


    Original     		PDF RURP640CC, RURP650CC, RURP660CC O-220AB 175oC RURP660CC RURP640CC RURP650CC FAIRCHILD to220ab package

    TB1060

    Abstract: RURP640CC RURP650CC RURP660CC TB151
    Text: RURP640CC, RURP650CC, RURP660CC 6A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C


    Original     		PDF RURP640CC, RURP650CC, RURP660CC O-220AB RURP660CC 175oC TB1060 RURP640CC RURP650CC TB151

    Untitled

    Abstract: No abstract text available
    Text: KSM6N40C/KSMF6N40C 400V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 6A, 400V, RDS on = 1.0 Ω @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


    Original     		PDF KSM6N40C/KSMF6N40C O-220 O-220F 54TYP 00x45Â

    2SC3083

    Abstract: No abstract text available
    Text: Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 1 : Base


    Original     		PDF EN947B 2SC3083 00V/6A VCBO500V) 2SC3083] PW300 Cycle10% 2SC3083

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 15.6 14.0


    Original     		PDF ENN947B 2SC3083 00V/6A VCBO500V) 2SC3083] PW300 Cycle10%

    2SC3083

    Abstract: ITR05305 ITR05306 ITR05307 ITR05308 ITR05309
    Text: Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 15.6 14.0


    Original     		PDF EN947B 2SC3083 00V/6A VCBO500V) 2SC3083] 2SC3083 ITR05305 ITR05306 ITR05307 ITR05308 ITR05309

    transistor IC 12A 400v

    Abstract: 400v 6a transistor 400V 100MA NPN TV power transistor datasheet BU408D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU408D DESCRIPTION •High Voltage: VCEV= 400V Min ·Fast Switching Speed: tf= 0.5 s(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS ·Designed for use in horizontal deflection output stages


    Original     		PDF BU408D 100mA transistor IC 12A 400v 400v 6a transistor 400V 100MA NPN TV power transistor datasheet BU408D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

    svd730

    Abstract: SVD730F svd730t N-channel enhancement 200V 60A
    Text: SVD730T/SVD730F 6A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF SVD730T/SVD730F SVD730T O-220-3L 50Unit/Tube O-220F-3L svd730 SVD730F svd730t N-channel enhancement 200V 60A

    g6n50e

    Abstract: No abstract text available
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HARRIS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EMITTER • t fall:1-°Hs


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1 O-251AA O-252AA g6n50e

    EM- 534 motor

    Abstract: 6N50E 840CV GE 639 g6n50e
    Text: m HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A FR FU S ia j sem iconductor 6A, 400V and 500V N-Channel IGBTs April 1995 Features Packages H G T D 6N 40 E 1, H G TD 6N50E1 • 6A, 400V and 500V J E D E C T O -251A A ’ ^CE ON ’ 2-5V Max. EMITTER


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6N50E1 -251A 40E1S -252A EM- 534 motor 6N50E 840CV GE 639 g6n50e

    g6n50e

    Abstract: HGTD6N50E1S G6N40E G6N50 flange terminal 25C1 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1
    Text: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S H A R R IS S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs March 1997 Packages Features HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • V ce ON : 2.5V Max. EM ITTER • T f a l l 1 1 -0 ^3


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTD6N50E1S HGTD6N40E1 O-251AA g6n50e G6N40E G6N50 flange terminal 25C1 HGTD6N40E1S HGTD6N50E1

    G6N50E1D

    Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
    Text: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS


    OCR Scan     		PDF HGTP6N40E1D, HGTP6N50E1D O-220AB 50iiH G6N50E1D G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor

    Untitled

    Abstract: No abstract text available
    Text: [O rderin g number-. EN 947B 2SC3083 N0.947B NPN Triple Diffused Planar Silicon Transistor 400V/6A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute Maxiaua Ratings at Ta=25°C Collector-to-Base Voltage


    OCR Scan     		PDF 2SC3083 00V/6A 300fis, 2SC3083