RURG5040
Abstract: RURG5050 RURG5060
Text: RURG5040, RURG5050, RURG5060 50A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RURG5040,
RURG5050,
RURG5060
O-247
RURG5050
TA9909)
RURG5040
RURG5060
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RHRU5040
Abstract: RHRU5050 RHRU5060
Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast
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RHRU5040,
RHRU5050,
RHRU5060
RHRU5050
TA49065)
RHRU5040
RHRU5060
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RHRU5040
Abstract: RHRU5050 RHRU5060
Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast
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RHRU5040,
RHRU5050,
RHRU5060
RHRU5050
TA49065)
RHRU5040
RHRU5060
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RHRU5050
Abstract: RHRU5060 RHRU5040
Text: RHRU5040, RHRU5050, RHRU5060 S E M I C O N D U C T O R 50A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <45ns JEDEC STYLE TO-218 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RHRU5040,
RHRU5050,
RHRU5060
O-218
RHRU5050
TA49065)
175oC
RHRU5060
RHRU5040
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RHRG5040
Abstract: RHRG5050 RHRG5060 50A400V
Text: RHRG5040, RHRG5050, RHRG5060 S E M I C O N D U C T O R 50A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <45ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RHRG5040,
RHRG5050,
RHRG5060
O-247
RHRG5050
TA49065)
175oC
RHRG5040
RHRG5060
50A400V
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RHRU5040
Abstract: RHRU5050 RHRU5060
Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet Title HR 040, HRU 50, HRU 60 bt A, 0V 0V pert odes utho April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065) are hyperfast diodes with soft recovery characteristics
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RHRU5040,
RHRU5050,
RHRU5060
RHRU5050
TA49065)
175oC
RHRU5040
RHRU5060
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TA9909
Abstract: rurg5060 RURG5050 RURG5040
Text: S E M I C O N D U C T O R RURG5040, RURG5050, RURG5060 50A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RURG5040,
RURG5050,
RURG5060
O-247
RURG5050
TA9909)
TA9909
rurg5060
RURG5040
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RURU5040
Abstract: RURU5050 RURU5060 TA9909
Text: RURU5040, RURU5050, RURU5060 S E M I C O N D U C T O R 50A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns JEDEC STYLE SINGLE LEAD TO-218 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RURU5040,
RURU5050,
RURU5060
O-218
RURU5050
TA9909)
RURU5040
RURU5060
TA9909
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RHRU5040
Abstract: RHRU5050 RHRU5060
Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet January 2002 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRU5040,
RHRU5050,
RHRU5060
RHRU5050
TA49065)
175oC
RHRU5040
RHRU5060
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cii 117 q
Abstract: ic 5657
Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA
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IRGP4078DPbF
IRGP4078D-EP
IRGP4078D-EPbF
O-247AC
O-247AD
JESD47F)
cii 117 q
ic 5657
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100A6
Abstract: IRGP4078DPBF
Text: IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA
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IRGP4078DPbF
IRGP4078D-EP
IRGP4078DPbF/EP
O-247AC
O-247AD
JESD47F)
100A6
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NPN Transistor 50A 400V
Abstract: BUP53 400v 50A Transistor LE17 NPN Transistor 10A 400V to3 NPN Transistor 30A 400V
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP53 • Low VCE SAT , Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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BUP53
O-204AE)
NPN Transistor 50A 400V
BUP53
400v 50A Transistor
LE17
NPN Transistor 10A 400V to3
NPN Transistor 30A 400V
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TA9909
Abstract: RURG5060
Text: RURG5040, RURG5050, RURG5060 ¡i 1995 50A, 400V - 600V Ultrafast Diodes Package Features • Ultrafast with Soft Recovery. <65ns JEDEC STYLE 2 LEAD TO-247 • Operating
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RURG5040,
RURG5050,
RURG5060
O-247
RURG5050
TA9909)
1RTR99D9
TA9909
RURG5060
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Untitled
Abstract: No abstract text available
Text: RURU5040, RURU5050, RURU5060 ¡11995 50A, 400V - 600V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery. <65ns • Operating Temperature. . . +175 C • Reverse Voltage Up To . . . . ,600V JEDEC STYLE SING LE LEAD TO-218
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RURU5040,
RURU5050,
RURU5060
O-218
RURU5050
TA9909)
RTR99D9
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Untitled
Abstract: No abstract text available
Text: RHRG5040, RHRG5050, RHRG5060 HARRIS S E M I C O N D U C T O R 50A, 400V - 600V Hyperfast Diodes April 1995 Package Features • Hyperfast with Soft R ecovery.<45ns • Operating Tem
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RHRG5040,
RHRG5050,
RHRG5060
O-247
RHRG5050
TA49065)
ion-impla00
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TA9909
Abstract: RURU5040
Text: HARRIS S E M I C O N D U C T O R RURU5040, RURU5050 RURU5060 50A, 400V - 600V Ultrafast Diodes December 1993 Package Features • Ultrafast with Soft Recovery. <65ns JEDEC STYLE SINGLE LEAD TO-218 TOP VIEW • Operating Temperature. +175°C
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RURU5040,
RURU5050
RURU5060
O-218
TA9909)
RURU5050,
TA9909
RURU5040
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R RHRG5040, RHRG5050 RHRG5060 50A, 400V - 600V Hyperfast Diodes July 1994 Features Package • Hyperfast with Soft Recovery. <45ns JEDEC STYLE TO-247 TOP VIEW • Operating Tem
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RHRG5040,
RHRG5050
RHRG5060
O-247
RHRG5050
TA49065)
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pj 0159
Abstract: No abstract text available
Text: in H a rris C D S E M IC O N D U C T O R RHRU5040, RHRU5050 RHRU5060 50A, 400V - 600V Hyperfast Diodes July 1994 Package Features Hyperfast with Soft Recovery . <45ns • Operating Temperature. +175°C • Reverse Voltage Up T o . . . 600V
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RHRU5040,
RHRU5050
RHRU5060
O-218
RHRU5050
TA49065)
430EE71
QOS7737
pj 0159
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URG5040
Abstract: No abstract text available
Text: fjn h a r r i s t jL P S E M I C O N D U C T O R RURG5040, RURG5050, RURG5060 50A, 400V - 600V Ultrafast Diodes A pril 1995 Package Features JEDEC STYLE 2 LEAD TO-247 • Ultrafast with Sofl R • Operating T em p eratu re. +175°C
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RURG5040,
RURG5050,
RURG5060
O-247
URG5040,
TA9909)
URG5040
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RURG5040
Abstract: RURG5050
Text: rn h a r r i s C D S E M I C O N D U C T O R RURG5040, RURG5050 RURG5060 50A, 400V - 600V Ultrafast Diodes December 1993 Features • Ultrafast with Soft Recovery Package JEDEC STYLE 2 LEAD TO-247 TOP VIEW . .<65ns • Operating Temperature_ ,+175°C • Reverse Voltage Up T o -
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RURG5040,
RURG5050
RURG5060
O-247
TA9909)
RURG5050,
RURG5040
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NPN Transistor 50A 400V
Abstract: 400v 50A Transistor C301J PowerTech PT3523 1074 L300 PT-3522 PT-3523 NPN 350W
Text: 7298764 POWcRTECH INC ^ D lÉ T l 7 5 ciñ7fc.4 DDDD513 4 P "BIG IDEAS ll\l BIG POWER" a g p PowerTee ¡•gESSfr SO AM PERES F T -3 5 2 2 P T -3 5 2 3 HIGH VOLTAGE SILICON NPIM TRANSISTOR FEATURES V CE sat . •• , 0.6V @ 50A V B E .1.5V @ 50A
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DQDD513
PT-3522
PT-3523
100KHz
100pA
NPN Transistor 50A 400V
400v 50A Transistor
C301J
PowerTech
PT3523
1074
L300
PT-3523
NPN 350W
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LC 3524
Abstract: 1b18a powertech ic 3524 L68J LC90A PT-3523 PT-3524 TG-63 transistor 2sc 791
Text: 1?E D TSiflTbM GaDOaeS M POIilERTECH “BIG IDEAS IN • IN C P bi g p o w e r" o w e mmm r T e m c h 9 0 AMPERE TRANSISTOR T -3 3 -1 5 PT-3523 PT-3524 FEATURES Vceo PT-3523 PT-3524 400V . 450V Vcb0 . 4 5 0 V . 500V
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T-33-15
PT-3523
PT-3524
PT-3523
5/16-24UNF-2A
TG-63
F5138
IRF9132
SH08PCN074
LC 3524
1b18a
powertech
ic 3524
L68J
LC90A
PT-3524
TG-63
transistor 2sc 791
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Untitled
Abstract: No abstract text available
Text: T - 3 3 -/s- J SEMELAB LTD 37E D • 0133167 OOODlbM T ISM LB SEMELAB DEC 3 1 1987 7*// ^ BUP53 NPN MULTI-EPITAXIAL TRANSISTOR Designed for high energy applications requiring robust fast switching devices MECHANICAL DATA Dimensions in mm FEATU RES • LOW VCEI„„
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BUP53
LE174JB.
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NPN Transistor 50A 400V
Abstract: SDT99504 SDT99704 SDT99904 TO114 400v 50A Transistor
Text: -JButron Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR ¿1 CONTACT METALLIZATION Base and emitter. > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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470mm
938mm
938mm)
508mm)
700mm)
524mm)
203mm)
O-114
10MHz
1200pF
NPN Transistor 50A 400V
SDT99504
SDT99704
SDT99904
TO114
400v 50A Transistor
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