TS13002 TRANSISTOR
Abstract: 400V 100MA NPN TS13002 TS13002CT
Text: TS13002 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 0.2A Pin assignment: 1. Emitter 2. Collector 3. Base Features VCE SAT , = 0.5V @ Ic / Ib = 100mA / 10mA Ordering Information High voltage. Part No. High speed switching Structure Silicon triple diffused type.
|
Original
|
PDF
|
TS13002
100mA
TS13002CT
100mA,
125ohm
TS13002 TRANSISTOR
400V 100MA NPN
TS13002
|
smd 0.5 400v
Abstract: 2SC4505
Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4505 Features High breakdown voltage. BVCEO = 400V Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. High switching speed, typically tf = 1.7ìs at Ic =100mA. Absolute Maximum Ratings Ta = 25
|
Original
|
PDF
|
2SC4505
100mA.
40X40X0
10mA/1mA
-10mA
10MHz
-100mA
-150V
smd 0.5 400v
2SC4505
|
BUY69
Abstract: BUY69A NPN Transistor VCEO 1000V
Text: BUY69A High Voltage Power Transistor High Voltage Power Switch are designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-Emitter Sustaining Voltage-100mA VCEO sus = 400V (Minimum).
|
Original
|
PDF
|
BUY69A
Voltage-100mA
BUY69
BUY69A
NPN Transistor VCEO 1000V
|
BUY69A
Abstract: BUY69 NPN Transistor VCEO 1000V
Text: 1165903 High voltage power switch. designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-emitter sustaining voltage - 100mA. • VCEO sus = 400V (minimum). • Optimum drive condition curves.
|
Original
|
PDF
|
100mA.
BUY69A
BUY69A
BUY69
NPN Transistor VCEO 1000V
|
NPN Transistor 1A 400V to - 92
Abstract: TSC873 TRANSISTOR 0835 transistor 600v. 1a. to 92 NPN Transistor 600V TSC873CT TSC873CW npn 600v to92 B12 IC marking code NPN TO92 400V
Text: TSC873 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 600V BVCEO 400V IC 1A VCE SAT Features ● ● Ordering Information High BVceo, BVcbo High current gain Structure ● 0.5V @ IC / IB = 500mA / 100mA
|
Original
|
PDF
|
TSC873
OT-223
500mA
100mA
TSC873CT
TSC873CW
NPN Transistor 1A 400V to - 92
TSC873
TRANSISTOR 0835
transistor 600v. 1a. to 92
NPN Transistor 600V
npn 600v to92
B12 IC marking code
NPN TO92 400V
|
Untitled
Abstract: No abstract text available
Text: TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.2A VCE SAT Features 0.5V @ IC / IB = 100mA / 10mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13002
100mA
TS13002CT
|
TS13002 TRANSISTOR
Abstract: 122 transistor To-92 NPN transistor to-92 high gain NPN Transistor 1A 400V TS13002 TS13002CT 400V 100MA NPN
Text: TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.2A VCE SAT Features 0.5V @ IC / IB = 100mA / 10mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13002
100mA
TS13002CT
TS13002 TRANSISTOR
122 transistor To-92
NPN transistor to-92 high gain
NPN Transistor 1A 400V
TS13002
400V 100MA NPN
|
marking b07
Abstract: NPN transistor to-92 TS13002 TS13002CT TS13002 TRANSISTOR 122 transistor To-92 "NPN Transistor"
Text: TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.2A VCE SAT Features 0.5V @ IC / IB = 100mA / 10mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13002
100mA
TS13002CT
marking b07
NPN transistor to-92
TS13002
TS13002 TRANSISTOR
122 transistor To-92
"NPN Transistor"
|
Untitled
Abstract: No abstract text available
Text: TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.2A VCE SAT Features 0.5V @ IC / IB = 100mA / 10mA Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13002
100mA
TS13002CT
|
300V transistor npn 2a
Abstract: 300V switching transistor NPN Transistor 10A 400V TIP151 Diode 400V 1.5A NPN Transistor 1.5A 400V NPN Transistor 10A 400V to 92 tip152 TRANSISTOR VCE 400V 500mA TIP150
Text: TIP150, TIP151, TIP152 Silicon NPN Power Darlington Transistor Description: The TIP150, TIP151, and TIP152 are silicon NPN power Darlington transistors in a TO220 type package designed for use in automotive ignition, switching, and motor control applications.
|
Original
|
PDF
|
TIP150,
TIP151,
TIP152
TIP152
TIP150)
TIP151)
TIP152)
TIP150
300V transistor npn 2a
300V switching transistor
NPN Transistor 10A 400V
TIP151
Diode 400V 1.5A
NPN Transistor 1.5A 400V
NPN Transistor 10A 400V to 92
TRANSISTOR VCE 400V 500mA
TIP150
|
Untitled
Abstract: No abstract text available
Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
|
Original
|
PDF
|
NTE2530
NTE2531
10IB1
10IB2
500mA,
|
NTE2531
Abstract: pnp 400v 4a to251 transistor pnp 30V 2A 1W NTE2530
Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver TO251 Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
|
Original
|
PDF
|
NTE2530
NTE2531
10IB1
-10IB2
500mA,
NTE2531
pnp 400v 4a
to251
transistor pnp 30V 2A 1W
NTE2530
|
pnp 400v 4a
Abstract: PNP 400V NTE2530 NTE2531 POWER TRANSISTORS 10A 400v pnp NTE253
Text: NTE2530 NPN & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
|
Original
|
PDF
|
NTE2530
NTE2531
10IB1
-10IB2
500mA,
pnp 400v 4a
PNP 400V
NTE2530
NTE2531
POWER TRANSISTORS 10A 400v pnp
NTE253
|
Dow Corning DC 11
Abstract: NTE2638 npn darlington 400v 1.*a
Text: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector−Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid
|
Original
|
PDF
|
NTE2638
250mA
-250mA,
250mA,
250mA
Dow Corning DC 11
NTE2638
npn darlington 400v 1.*a
|
|
|
NTE2638
Abstract: No abstract text available
Text: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector–Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid
|
Original
|
PDF
|
NTE2638
250mA,
NTE2638
|
BU931R
Abstract: BU932R darlington 8A 300V TC125
Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION •With TO-3 package ·DARLINGTON APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls PINNING See Fig.2 PIN DESCRIPTION
|
Original
|
PDF
|
BU931R
BU932R
BU931R
100mA
250mA
BU932R
darlington 8A 300V
TC125
|
Untitled
Abstract: No abstract text available
Text: TS13002A High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 0.3A VCE SAT , = 1.5V @ Ic / Ib = 200mA / 20mA Pin assignment: 1. Emitter 2. Collector 3. Base Features Ordering Information High voltage. High speed switching Structure Silicon triple diffused type.
|
Original
|
PDF
|
TS13002A
200mA
TS13002ACT
|
Untitled
Abstract: No abstract text available
Text: TS13002A High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 0.3A VCE SAT , = 1.5V @ Ic / Ib = 200mA / 20mA Pin assignment: 1. Emitter 2. Collector 3. Base Features Ordering Information High voltage. High speed switching Structure Silicon triple diffused type.
|
Original
|
PDF
|
TS13002A
200mA
TS13002ACT
|
NPN Transistor 50A 400V
Abstract: 400v 50A Transistor BU807 400V 100MA NPN
Text: BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER
|
Original
|
PDF
|
BU806
BU807
O-220
BU806)
BU807)
NPN Transistor 50A 400V
400v 50A Transistor
400V 100MA NPN
|
npn switching transistor Ic 100mA
Abstract: TS13002ACT TRANSISTOR TS13002A TS13002ACT
Text: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13002A
200mA
TS13002ACT
npn switching transistor Ic 100mA
TS13002ACT TRANSISTOR
TS13002A
|
Untitled
Abstract: No abstract text available
Text: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13002A
200mA
TS13002ACT
|
Untitled
Abstract: No abstract text available
Text: TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 0.3A VCE SAT Features 1.5V @ IC / IB = 200mA / 20mA Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
|
Original
|
PDF
|
TS13002A
200mA
TS13002ACT
|
AC2500
Abstract: KPC2020 KPC2021 KPC2022 KPC2023
Text: Photocoupler KPC2020 • KPC2021 • KPC2022 • KPC2023 These Photocouplers cosist of a Gallium Arsenide Infrared Emitting DIMENSION Unit : mm Diode and a Silicon NPNPN Phototriac in a 6-pin package. 7.62 5 6.4 FEATURES • Peak Off-state Voltage : Min.400V
|
Original
|
PDF
|
KPC2020
KPC2021
KPC2022
KPC2023
100mA
AC2500Vrms
E107486
51Min.
AC2500
KPC2020
KPC2021
KPC2022
KPC2023
|
ksp44
Abstract: No abstract text available
Text: NPN EXITAXIAL SILICON TRANSISTOR KSP44/45 HIGH VOLTAGE TRANSISTOR TO-92 • Coll*ctor€m ilt*r Voltage VCEo = KSP44: 400V KSP45: 350V • Collector Dissipation: Pc max = 625mW ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Symbol Collector-Base Voltage
|
OCR Scan
|
PDF
|
KSP44/45
KSP44:
KSP45:
625mW
KSP44
KSP45
KSP45
|
