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    CEFF630

    Abstract: No abstract text available
    Text: PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V, 10 A , Rds on =400itiQ @Vgs=1 0V • Super high dense cell design for extremely low Rds(on). • High power and current handling capability. • TO-220F full-pak for through hole.


    OCR Scan     		PDF CEFF630 400mQ O-220F to-220f CEFF630

    transistor f630

    Abstract: f630 power transistor f630 bf630 CEPF630 CD108
    Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V, 10A, Rds on =400itiQ @VGS=10V. • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability. • TO-220 & TO-263 package. CEB SERIES


    OCR Scan     		PDF 400itiQ O-220 O-263 to-263 to-220 F630/C transistor f630 f630 power transistor f630 bf630 CEPF630 CD108

    CEM9400

    Abstract: No abstract text available
    Text: CEM9400 PRELIM INARY P-Channel Enhancement Mode Field Effect Transistor FEATURES • - 2 0 V , - 2 .5 A , RDS ON =250mQ @ V gs =-10V. R ds(on)=400itiQ @ V gs =-4.5V. • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.


    OCR Scan     		PDF CEM9400 250mQ 400itiQ CEM9400