H11AA817
Abstract: H11A814 H11A817B H11AA814A H11AA814 3 pin phototransistor all datasheet phototransistor H11A817 H11A817C dual Phototransistor
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION H11AA814 SERIES H11A817 SERIES The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
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H11AA814
H11A817
H11A814
H11A817
H11AA814:
H11A817:
H11AA814A:
H11A817A:
H11A817B:
H11AA817
H11A817B
H11AA814A
3 pin phototransistor
all datasheet phototransistor
H11A817C
dual Phototransistor
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H11A817
Abstract: No abstract text available
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION H11AA814 SERIES H11A817 SERIES The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
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H11AA814
H11A817
H11A817
H11AA814:
H11A817:
H11AA814A:
H11A817A:
H11A817B:
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H11A817B
Abstract: H11A817A H11AA814 H11A817
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION H11AA814 SERIES H11A817 SERIES The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
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H11AA814
H11A817
H11AA814:
H11A817:
H11AA814A:
H11A817A:
H11A817B:
H11A817B
H11A817A
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H11A817
Abstract: No abstract text available
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES DESCRIPTION H11AA814 SCHEMATIC The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
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H11AA814
H11A817
H11AA814:
H11A817:
H11AA814A:
H11A817A:
H11A817B:
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H11A817B
Abstract: H11AA814 all datasheet phototransistor 3 pin phototransistor dual Phototransistor H11A817C H11A817D H11AA814A H11A817 H11A817A
Text: 4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES DESCRIPTION H11AA814 SCHEMATIC The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
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H11AA814
H11A817
H11AA814:
H11A817:
H11AA814A:
H11A817A:
H11A817B:
H11A817B
all datasheet phototransistor
3 pin phototransistor
dual Phototransistor
H11A817C
H11A817D
H11AA814A
H11A817A
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IDT7MP4095
Abstract: No abstract text available
Text: IDT7MP4095 128K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit static RAM module • Low profile 64-pin ZIP Zig-zag In-line vertical Package or 64-pin SIMM (Single In-line Memory Module)
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IDT7MP4095
64-pin
IDT7MP4095
7MP4095
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DECODER
Abstract: 54LS155 54LS155DMQB 54LS155FMQB 54LS156 DM54LS155 DM54LS156 DM74LS155 DM74LS156 LS155
Text: 54LS155 DM54LS155 DM74LS155 54LS156 DM54LS156 DM74LS156 Dual 2-Line to 4-Line Decoders Demultiplexers General Description Features These TTL circuits feature dual 1-line-to-4-line demultiplexers with individual strobes and common binary-address inputs in a single 16-pin package When both sections are
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54LS155
DM54LS155
DM74LS155
54LS156
DM54LS156
DM74LS156
16-pin
DECODER
54LS155DMQB
54LS155FMQB
DM74LS155
DM74LS156
LS155
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74LS155
Abstract: DM74LS155N DM74LS155 DM74LS155M DM74LS156 DM74LS156M DM74LS156N M16A MS-001 N16E
Text: Revised April 2000 DM74LS155 • DM74LS156 Dual 2-Line to 4-Line Decoders/Demultiplexers General Description Features These TTL circuits feature dual 1-line-to-4-line demultiplexers with individual strobes and common binary-address inputs in a single 16-pin package. When both sections are
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DM74LS155
DM74LS156
16-pin
74LS155
DM74LS155N
DM74LS155
DM74LS155M
DM74LS156
DM74LS156M
DM74LS156N
M16A
MS-001
N16E
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demultiplexer
Abstract: transmission-line
Text: DM54155/DM74155 Dual 2-Line to 4-Line Decoders/Demultiplexers General Description These TTL circuits feature dual 1-line-to-4-line demultiplexers with individual strobes and common binary-address inputs in a single 16-pin package. When both sections are enabled by the strobes, the
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DM54155/DM74155
16-pin
demultiplexer
transmission-line
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ram 4256
Abstract: No abstract text available
Text: TM4256EC4 262,144 BY 4-BIT DYNAMIC RAM MODULE SEPTEMBER 1 985-R E VIS E D MAY 1988 2 6 2 ,1 4 4 T M 4256 E C 4 . . . C SINGLE-IN-LINE PACKAGE x 4 Organization Dynamic RAM Modules TOP VIEW Single 5-V Supply 110% Tolerance) 22-Pin Single-In-line Package (SIP)
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TM4256EC4
985-R
22-Pin
77CC1
ram 4256
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION TM4256GP8, TM4256GV8 262,144 BY 8-BIT DYNAMIC RAM MODULES OCTOBER 1985 - R EV ISED NOVEMBER 1985 2 6 2 ,1 4 4 X 8 Organization V SINGLE-IN-LINE PACKAGE T ITOP VIEW Single 5-V Supply 1 0 % Tolerance) 30-Pin Single-in-Line Package (SIP)
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TM4256GP8,
TM4256GV8
30-Pin
770C1
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4416-15
Abstract: TMS4416 mos memory data book
Text: • TM4416FE8 32,768 BY 8-BIT DYNAMIC RAM MODULE MOS LSI X 32,76S'X~fr~Organization £ JANUARY 1985- 24-PIN SINGLE-IN-LINE PACKAGE TOP VIEW Single + 5 -V Supply (1 0% Tolerance) 24-Pin Single^Ìn-Line Package (SIP) V d d (1) W (2) Utilizes Four 16K X 4 Dynamic RAMs in
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TM4416FE8
24-Pin
S4416-12
TMS4416-1
S4416,
J4416
384-WORD
4416-15
TMS4416
mos memory data book
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION TM4256EQ5, TM4257EQ5 262,144 BY 5-BIT DYNAMIC RAM MODULES OCTOBER 1 9 8 5 - R EV ISED NOVEMBER 1985 2 6 2 ,1 4 4 X 5 Organization Q SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Supply (10% Tolerance) 24-Pin Single-in-Line Package (SIP)
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TM4256EQ5,
TM4257EQ5
24-Pin
EQ5-15
EQ5-20
77C01
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Untitled
Abstract: No abstract text available
Text: TM4256EC4, TM4257EC4 262.144 BY 4-BIT DYNAMIC RAM MODULES SEPTEMBER 9 185 - REVISED NOVEMBER 198E C S IN G LE -IN LINE P AC K A G E 2 6 2 ,1 4 4 X 4 Organization TO P V IE W Single 5-V Supply <10% Tolerance) A8 22-Pin Single-in-Line Package (SIP) VDD D1
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TM4256EC4,
TM4257EC4
22-Pin
i-135
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Untitled
Abstract: No abstract text available
Text: February 1993 Semiconductor DM54155/DM74155 Dual 2-Line to 4-Line Decoders/Demultiplexers General Description These TTL. circuits feature dual 1-line-to-4-line demultiplex ers with Individual strobes and common binary-address in puts in a single 16-pin package. When both sections are
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DM54155/DM741
DM54155/DM74155
16-pin
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TMS4256FML
Abstract: tms4256 256Kx1 dRAM
Text: ADVANCE INFORMATION TM4256GP9, TM4256GV9 262.144 BY 9-BIT DYNAMIC RAM MODULES OCTOBER 1 9 8 5 - • 2 6 2 .1 4 4 X 9 Organization • Single 5-V Supply 10% Tolerance V SINGLE-IN-LINE PACKAG E f ITOP VIEW) 30-Pin Single-in-Line Package (SIP) —Pinned Module for Through-Hole
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TM4256GP9,
TM4256GV9
30-Pin
4256G
TM4256GP9)
TMS4256FML
tms4256
256Kx1 dRAM
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TM4164EC4-12
Abstract: TM4164EC4-15 TM4164EC4-20 65536X4
Text: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 65,536 X 4 Organization SINGLE-IN-LINE PACKAGE TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Llne Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic Chip Carrier
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TM4164EC4
22-Pin
TM4164EC4-12
TM4164EC4-16
TM4164EC4-20
TM4164EC4-C
TM4164EC4-15
65536X4
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54LS155DMQB
Abstract: 54LS155FMQB 54LS155LMQB DM54LS155J DM54LS155W DM74LS155M LS155 LS156
Text: 54LS155/DM54LS155/DM74LS155, 54LS156/DM54LS156/DM74LS156 Dual 2-Line to 4-Line Decoders/Demultiplexers General Description Features These TTL circuits feature dual 1-line-to-4-line demultiplex ers with individual strobes and common binary-address in puts in a single 16-pin package. When both sections are
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54LS155/DM54LS155/DM74LS155,
54LS156/DM54LS156/DM74LS156
16-pin
54LS155DMQB
54LS155FMQB
54LS155LMQB
DM54LS155J
DM54LS155W
DM74LS155M
LS155
LS156
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Untitled
Abstract: No abstract text available
Text: 54LS155/DM54LS155/DM74LS155, 54LS156/DM54LS156/DM74LS156 Dual 2-Line to 4-Line Decoders/Demultiplexers General Description Features These TTL circuits feature dual 1-line-to-4-line demultiplex ers with individual strobes and common binary-address in puts in a single 16-pin package. When both sections are
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54LS156/DM54LS156/DM74LS156Dual
54LS155/DM54LS155/DM74LS155,
54LS156/DM54LS156/DM74LS156
16-pin
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TMS4256FML
Abstract: TMS4256 TMS4256-12 TMS4256-20 AZ31
Text: ADVANCE INFORMATION TM4256GP8, TM4256GV8 262,144 BY 8-BIT DYNAMIC RAM MODULES OCTOBER 1 9 8 5 - V SINGLE-IN-LINE PA C K A G Er 2 6 2 ,1 4 4 X 8 Organization TOP VIEW Single 5 -V Supply {1 0 % Tolerance) 30-Pin Single-in-Line Package (SIP) — Pinned Module for Through-Hole
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TM4256GP8,
TM4256GV8
30-Pin
TM4256GV8)
TM4256GP8)
TMS4256
TM4256G
TMS4256FML
TMS4256-12
TMS4256-20
AZ31
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Untitled
Abstract: No abstract text available
Text: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 6 5 ,5 3 6 X 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Line Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic
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TM4164EC4
22-Pin
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10LZ
Abstract: No abstract text available
Text: PARAdGM PDM4M4040 128K x 32 CMOS Static RAM Module Features Description □ High density 4 megabit Static RAM module □ Low profile 64-pin ZIP Zig-zag In-line vertical Package or 64-pin SIMM (Single In-line Memory Module) □ Fast access time: 12 ns (max.)
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64-piri
64-pin
PDM4M4040
PDM4M4040
10LZ
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4045 RAM
Abstract: No abstract text available
Text: IDT7MP4045 IDT7MP4145 256K x 32 CMOS STATIC RAM MODULE DESCRIPTION: • High density 1 megabyte static RAM module IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120 • Low profile 64 pin ZIP (Zig-zag In-line vertical Package) or 64 pin SIMM (Single In-line Memory Module) for
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IDT7MP4145
IDT7MP4120)
IDT7MP4045
IDT7MP4145
7MP4045
7MP4145
2S771
4045 RAM
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Untitled
Abstract: No abstract text available
Text: PARADIGM' PDM4M4040 128K x 32 CMOS Static RAM Module Features Description □ High density 4 megabit Static RAM module LI Low profile 64-pin ZIP Zig-zag In-line vertical Package or 64-pin SIMM (Single In-line Memory Module) □ Fast access time: 12 ns (max.)
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PDM4M4040
64-pin
PDM4M4040
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