BJT BF 331
Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
24-Hour
BJT BF 331
mje 1303
transistor "micro-x" "marking" 102
transistor MJE -1103
NE68019
915 transistor
355 mje 1102
2SC5013
NE68018
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014e1
Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
014e1
transistor NEC D 882 p 6V
mje 1303
transistor BF 414
BJT IC Vce
NE AND micro-X
2SC5008
2SC5013
NE68018
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transistor BF 697
Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE
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NE680
NE68800
NE68018-T1-A1
NE68019-T1-A1
NE68030-T1-A1
transistor BF 697
transistor kf 469
transistor BI 342 905
682 SOT23 MARKING
K 2645 transistor
038N
BJT BF 331
KF 569
transistor "micro-x" "marking" 102
AF 1507
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AT-64020
Abstract: AT64020 AT-64023
Text: Medium Power Transistors Typical Specifications @ 25°C Case Temperature Part Number VCE (V) P1 dB @ 2 GHz G1 dB @ 2 GHz P1 dB @ 4 GHz G1 dB @ 4 GHz (dBm) (dBm) (dBm) (dBm) AT-64020 16.0 +28 10.0 +27 AT-64023 16.0 +28 12.5 +27 4-20 Package Page No. 6.5 200 mil BeO disk
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AT-64020
AT-64023
AT-64020
AT64020
AT-64023
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mje 1303
Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
NE68039-T1
NE68039R-T1
mje 1303
transistor NEC D 882 p 6V
BJT BF 331
mje 3004
nec d 882 p transistor
2SC5008
68018
transistor KF 507
2SC5013
NE68000
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mje 1303
Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE680
NE68030-T1-A
NE68033-T1B-A1
NE68035
NE68039-T1-A1
NE68039R-T1
NE68800
mje 1303
BJT BF 331
ET 439
nec d 882 p transistor
transistor BI 342 905
682 SOT23 MARKING
transistor NEC D 587
transistor KF 517
NE AND micro-X
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transistor bf 968
Abstract: No abstract text available
Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O
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NE680
NE68030-T1
NE68033-T1B
NE68035
NE68039-T1
NE68039R-T1
transistor bf 968
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HMC530LP5E
Abstract: HMC530LP5 530lp5
Text: HMC530LP5 / 530LP5E v05.0609 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz
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HMC530LP5
530LP5E
25mm2
HMC530LP5
HMC530LP5E
530lp5
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Untitled
Abstract: No abstract text available
Text: HMC530LP5 / 530LP5E v07.0411 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz
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HMC530LP5
530LP5E
HMC530LP5
HMC530LP5E
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Untitled
Abstract: No abstract text available
Text: HMC530LP5 / 530LP5E v01.0508 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz
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HMC530LP5
530LP5E
HMC530LP5
HMC530LP5E
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Untitled
Abstract: No abstract text available
Text: HMC530LP5 / 530LP5E v02.1208 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz
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HMC530LP5
530LP5E
HMC530LP5
HMC530LP5E
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Untitled
Abstract: No abstract text available
Text: HMC530LP5 / 530LP5E v07.0411 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz
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HMC530LP5
530LP5E
HMC530LP5
HMC530LP5E
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Untitled
Abstract: No abstract text available
Text: HMC530LP5 / 530LP5E v06.1210 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz
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HMC530LP5
530LP5E
HMC530LP5
HMC530LP5E
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Untitled
Abstract: No abstract text available
Text: HMC582LP5 / 582LP5E v01.1208 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 11.1 - 12.4 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 11.1 - 12.4 GHz Fo/2 = 5.55 - 6.2 GHz Fo/4 = 2.78 - 3.1 GHz
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HMC582LP5
582LP5E
HMC582LP5
HMC582LP5E
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Untitled
Abstract: No abstract text available
Text: HMC512LP5 / 512LP5E v00.0407 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.6 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.6 - 10.8 GHz Fo/2 = 4.8 - 5.4 GHz Fo/4 = 2.4 - 2.7 GHz
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HMC512LP5
512LP5E
HMC512LP5
HMC512LP5E
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FM tuning capacitor
Abstract: HMC512LP5E HMC512LP5
Text: HMC512LP5 / 512LP5E v03.0609 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.6 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.6 - 10.8 GHz Fo/2 = 4.8 - 5.4 GHz Fo/4 = 2.4 - 2.7 GHz
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HMC512LP5
512LP5E
25mm2
HMC512LP5
HMC512LP5E
FM tuning capacitor
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Untitled
Abstract: No abstract text available
Text: HMC530LP5 / 530LP5E v03.0309 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz
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HMC530LP5
530LP5E
25mm2
HMC530LP5
HMC530LP5E
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HMC530LP5E
Abstract: HMC530LP5
Text: HMC530LP5 / 530LP5E v00.0407 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.5 - 10.8 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Triple Output: Fo = 9.5 - 10.8 GHz Fo/2 = 4.75 - 5.4 GHz Fo/4 = 2.38 - 2.7 GHz
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HMC530LP5
530LP5E
HMC530LP5
HMC530LP5E
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702 TRANSISTOR sot-23
Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE68800
NE68018-T1
NE68019-T1
NE68030-T1
NE68033-T1B
702 TRANSISTOR sot-23
mje 1303
common emitter bjt
transistor kf 508
IC CD 3207
BJT BF 331
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mje 1303
Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
NE68Q
NE68800
NE68018-T1
NE68019-T1
NE68030-T1
NE68033-T1B
mje 1303
transistor NEC D 882 p 6V
sg 3852
OPT500
2sc5008
15T09
model RB-30 S PT 100
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ha 1452 Amplifiers
Abstract: 702 sot 23 100Z3
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
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NE680
OT-23)
ha 1452 Amplifiers
702 sot 23
100Z3
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS m blE » 4 4 4 7 5 A 4 OOO^flOa 53b H H P A AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor HEW LETT PACKARD Features • • • • TO-72 Package Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz
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AT-41472
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE 1 H EW LETT PACKARD • 4 4 4 7 S 6 4 0 0 0 1 7 7 4 323 « H P A AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35mfcro-X Package Features • 16.0 dBm typical Pi dBat 2.0 GHz • 10.5 dB typical G i dB at 2.0 GHz
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AT-00535
35mfcro-X
AT-00535
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HXTR-5103
Abstract: HXTR-5101 it 5001 HXTR-5001 S21E
Text: LINEAR POWER TRANSISTOR CHIP COMPONENTS HXTR-5001 CIRCUITS H E W L E T T PACKARD Features INTEGRATED HIGH P1dB LINEAR POWER 23 dBm Typical at 2 GHz 22 dBm Typical at 4 GHz HIGH P1dB GAIN 13.5 dB Typical at 2 GHz 8.0 dB Typical at 4 GHz LOW DISTORTION FOR HYBRID
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HXTR-5001
HXTR-5001
HXTR-5103
HXTR-5101
it 5001
S21E
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