3sk268 fet
Abstract: No abstract text available
Text: High Frequency FETs 3SK268 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 Gate 2 to Source voltage Drain current Allowable power dissipation Channel temperature Storage temperature V VG1S ±8 V VG2S
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3SK268
3sk268 fet
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3SK268
Abstract: 3sk268 fet
Text: High Frequency FETs 3SK268 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 15 V Gate 1 to Source voltage VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current ID ±30 mA Allowable power dissipation
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3SK268
SC-82
3SK268
3sk268 fet
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3SK268
Abstract: SC-82
Text: High Frequency FETs 3SK268 Silicon N-Channel 4-pin MOS FET For VHF amplification M Di ain sc te on na tin nc ue e/ d unit: mm 2.1±0.1 • Features 0.425 0.425 V Gate 1 to Source voltage VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current ID ±30
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3SK268
3SK268
SC-82
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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3SK2411
Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Appli Band cation TO-92 (D46) New S Type (D34) M Type (D35) 2SC1215 Package (No.) SS Mini Type S Mini Type S Mini Type (3 pin) (4 pin)
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2SC1215
3SK268
2SC3354
2SC4716
2SC3354
2SC2636
3SK2411
2SC1215
3SK143
3SK22
3sk169
3SK247
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3sk287
Abstract: 3SK139 3sk247 3SK285
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type
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3SK144
3SK202
3SK241
3SK268
3SK286
2SC1215
2SC3354
2SC2636
3sk287
3SK139
3sk247
3SK285
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3sk272
Abstract: 2SK1964 2SC1215 3SK202 3SK241 3SK268 3SK144 3sk247 3SK270 3SK271
Text: Transistors Selection Guide by Applications and Functions • High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli Band cation New S Type (D39) TO-92 (D49) Cross Pack (Ceramic) (D37(a), D37(b)ss) M Type (D40) Mini Type (3 pin)
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2SC1215
3SK268
3SK144
3SK202
3SK241
3SK268
3SK286
2SC1215
2SC3354
2SC2636
3sk272
2SK1964
3sk247
3SK270
3SK271
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2SK1216
Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK1216
3SK139
FETs Field Effect Transistors
3SK268
3SK269
3SK192
2SK374
3SK286
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3SK192
Abstract: 2SK651
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )
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2SK2380
2SJ0385
2SJ364
2SK662
2SK663
2SK1103
2SJ163
2SK198
2SK374
2SK123
3SK192
2SK651
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3sk fet
Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
Text: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663
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2SJ364
2SK123
2SK662
2SK663
2SK301
3sk fet
3SK192
K305A
3sk268 fet
2SK1860
2SK A 1103
2sk to-92
SJ163
2sk type
3sk301
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2SK620
Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663
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2SJ0385
2SJ364
2SK1103
2SJ163
2SK1104
2SJ164
2SK662
2SK663
2SK198
2SK374
2SK620
3SK268
3SK269
3SK286
CAMERA MOS
2SJ164
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Untitled
Abstract: No abstract text available
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type
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2SJ0385
A2SK2380
2SK1103
2SJ364
2SJ163
2SK662
2SK198
2SK663
2SK374
2SK123
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K614
Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)
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2SK662
2SK1103
2SJ163
2SK198
2SK374
2SK123
2SK1216
2SK1842
2SJ164
2SK301
K614
K 1833
2SK 129 A
gn1015
2SK1257 equivalent
2SK1962
2sk 170 Pin
GN1021
IC STK411-220E CIRCUIT
K996
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