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    Murata Manufacturing Co Ltd GCM2195C1H103JA16D

    CAP CER 10000PF 50V C0G/NP0 0805
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    DigiKey GCM2195C1H103JA16D Reel 844,000 4,000
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    Mouser Electronics GCM2195C1H103JA16D 7,296
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    Bristol Electronics GCM2195C1H103JA16D 48,000
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    GCM2195C1H103JA16D 4,000
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    TTI GCM2195C1H103JA16D Reel 24,000 4,000
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    ComSIT USA GCM2195C1H103JA16D 4,000
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    Avnet Abacus GCM2195C1H103JA16D Reel 19 Weeks 4,000
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    Avnet Asia GCM2195C1H103JA16D 10 Weeks 4,000
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    Murata Manufacturing Co Ltd GRM155R71H223JA12D

    CAP CER 0.022UF 50V X7R 0402
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    DigiKey GRM155R71H223JA12D Cut Tape 15,164 1
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    GRM155R71H223JA12D Digi-Reel 15,164 1
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    GRM155R71H223JA12D Reel 10,000 10,000
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    Avnet Abacus GRM155R71H223JA12D Reel 15 Weeks 10,000
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    Murata Manufacturing Co Ltd GCM21B5C1H183JA16K

    CAP CER 0.018UF 50V C0G/NP0 0805
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    DigiKey GCM21B5C1H183JA16K Cut Tape 9,900 1
    • 1 $0.32
    • 10 $0.185
    • 100 $0.1159
    • 1000 $0.07966
    • 10000 $0.06498
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    GCM21B5C1H183JA16K Digi-Reel 9,900 1
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    • 100 $0.1159
    • 1000 $0.07966
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    Avnet Americas GCM21B5C1H183JA16K Reel 14 Weeks 10,000
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    Vishay Beyschlag VR25000006803JA100

    RES 680K OHM 5% 1/4W AXIAL
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    DigiKey VR25000006803JA100 Cut Tape 2,268 1
    • 1 $0.46
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    • 1000 $0.10812
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    VR25000006803JA100 Ammo Pack 2,000 1,000
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    Murata Manufacturing Co Ltd GCM2195C1K113JA16D

    CAP CER 0.011UF 80V C0G/NP0 0805
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    DigiKey GCM2195C1K113JA16D Cut Tape 2,118 1
    • 1 $0.4
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    • 1000 $0.10614
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    GCM2195C1K113JA16D Digi-Reel 2,118 1
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    • 1000 $0.10614
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    Avnet Abacus GCM2195C1K113JA16D 17 Weeks 4,000
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    3JA1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: ,ï l l u n , . HY5141OOA Series >79 I U N U n I 4M x 1-blt CMOS DRAM DESCRIPTION The HY5141 OOA is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY5141 OOA utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY5141OOA HY5141 HY51410QA such1380 1AC06-30-MAY94 HY514100A HY514100AJ HY514100AU HY514100AT

    A13CH

    Abstract: km6810008 A12CZ KM681000BLI km6810008l
    Text: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.


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    PDF KM681000BLI 128Kx8 550pW 385mW KM681000BLGI/BLG 32pin 525mil) KM681000BLTI/BLTI-L 0820F) A13CH km6810008 A12CZ km6810008l

    3JA1

    Abstract: No abstract text available
    Text: KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4002B is a CMOS high speed 4,194,304 x 1 Dynamic Random Access Memory, Its de­ sign is op tim ized fo r high pe rform ance ap p lica tio n s


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    PDF KM41C4002B KM41C4002B-6 KM41C4002B-7 KM41C4002B-8 110ns 130ns 150ns KM41C4002B 3JA1