ADF4602
Abstract: MOD RF TX-SAW MID 5V WCDMA receiver UMTS baseband OP BASEBAND 80MHZ AD9863 WCDMA TRANSCEIVER gsm filter 922a1 sr 2262
Text: Single-Chip, Multiband 3G Femtocell Transceiver ADF4602 APPLICATIONS 3G home basestations femtocells 3G repeaters DAC2 GPO[4:1] DAC2 GPO 1 TO 4 FUNCTIONAL BLOCK DIAGRAM DAC1 Single-chip multiband 3G transceiver 3GPP 25.104 release 6 WCDMA/HSPA compatible
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ADF4602
40-Lead
CP-40-1)
ADF4602BCPZ
ADF4602BCPZ-RL
CP-40-1
ADF4602
MOD RF TX-SAW MID 5V
WCDMA receiver UMTS baseband
OP BASEBAND 80MHZ
AD9863
WCDMA TRANSCEIVER
gsm filter
922a1
sr 2262
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MXC300-30
Abstract: DigRF MXC300 ARM11 ARM1136 SC140 H.264 encoder chip bluetooth encoder h.264 GSM starcore ARM11TM
Text: Mobile Extreme Convergence Platforms MXC300-30 Overview First 3G Single Core Modem count, size and system costs, while Freescale Semiconductor’s leadership in 3G Freescale’s latest 3G platform, the enhancing multimedia and continues with the MXC300-30 platform. Based
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MXC300-30
MXC300-30
MXC300-30,
SC140e
11a/b/g
ARM1136
ARM11
MXC30030FS
DigRF
MXC300
SC140
H.264 encoder chip
bluetooth encoder h.264
GSM starcore
ARM11TM
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A844D
Abstract: No abstract text available
Text: Single-Chip, Multiband 3G Femtocell Transceiver ADF4602 FEATURES APPLICATIONS 3G home base stations femtocells GPO[4:1] ADF4602 GPO 1 TO 4 DAC2 DAC2 DAC1 FUNCTIONAL BLOCK DIAGRAM DAC1 Single-chip, multiband 3G transceiver 3GPP 25.104 release 9 WCDMA/HSPA compatible
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ADF4602
ADF4602BCPZ
ADF4602BCPZ-RL
EV-ADF4602EB3ZTST
EVAL-ADF4602EB3Z
EVAL-ADF4602EB5Z
40-Lead
CP-40-1
A844D
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BNC edge connector layout
Abstract: hdmi SDI BNC7T-J-P-HN-ST-EM1 SMB SDI layout FOR 3G cables samtec connector samtec connector QTH hdmi to SDI Samtec High Density Arrays
Text: Common 3G SDI applications include Routers, Switchers, Video Servers, Distribution Amplifiers DAs , Multi-Viewers, Encoders/Decoders, Converters, Projectors, and Test & Measurement. Typical Interconnect Panels 3G SDI Challenges 2 Samtec’s signal integrity expertise and
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3g transistor
Abstract: UAA3536 3g amplifier transistor for 3G UAA3537 3G RF signal processing BGY402E HVQFN16 HVQFN24 UAA3580
Text: 3G RF chipset Compact, radio chipset for stand-alone UMTS applications and 3G phones For maximum design flexibility, Philips Semiconductors has developed a complete radio chipset for the UMTS RF part of a GSM/3G phone that perfectly complements our GSM/GPRS/
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UAA3536
UAA3537)
3g transistor
3g amplifier
transistor for 3G
UAA3537
3G RF signal processing
BGY402E
HVQFN16
HVQFN24
UAA3580
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ev-adf4602eb3ztst
Abstract: AD9963 EVAL-ADF4602EB3Z OP BASEBAND 80MHZ UMTS receiver ADF4602 Theor 7092d WCDMA receiver UMTS baseband EVAL-ADF4602EB5Z
Text: Single-Chip, Multiband 3G Femtocell Transceiver ADF4602 APPLICATIONS 3G home base stations femtocells ADF4602 GPO 1 TO 4 DAC2 DAC2 GPO[4:1] FUNCTIONAL BLOCK DIAGRAM DAC1 Single-chip, multiband 3G transceiver 3GPP 25.104 release 9 WCDMA/HSPA compatible UMTS band coverage
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ADF4602
ADF4602BCPZ
ADF4602BCPZ-RL
EV-ADF4602EB3ZTST
EVAL-ADF4602EB3Z
EVAL-ADF4602EB5Z
40-Lead
CP-40-1
ev-adf4602eb3ztst
AD9963
EVAL-ADF4602EB3Z
OP BASEBAND 80MHZ
UMTS receiver
ADF4602
Theor
7092d
WCDMA receiver UMTS baseband
EVAL-ADF4602EB5Z
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4G lte RF Transceiver
Abstract: MB86L10A DigRF 4G RF transceiver LTE power amplifier transceiver 4G LTE lte RF Transceiver tx 2G transmitter MB86L01A lte transceiver transceiver 4G LTE
Text: The Fujitsu 2G/3G/LTE Transceiver MB86L10A Ideal for Multimode, Multiband LTE, UMTS and EDGE Mobile Handsets Transceiver Module TCXO 3G Rx Path Tx Path 4G Rx Path Band XI ADC 3G + 4G DigRF Interfaces SYSCLKEN Band IX SWITC H SYSCLK Band I Band VI ADC Band VIII
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MB86L10A
MB86L10A
RFT-FS-21377-05/2010
4G lte RF Transceiver
DigRF 4G
RF transceiver LTE
power amplifier transceiver 4G LTE
lte RF Transceiver
tx 2G transmitter
MB86L01A
lte transceiver
transceiver 4G LTE
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Untitled
Abstract: No abstract text available
Text: MHL21336N Rev. 5, 1/2005 Freescale Semiconductor Technical Data 3G Band RF Linear LDMOS Amplifier MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336N
MHL21336
MHL213emiconductor
MHL21336N
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MHL21336NN
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN 3G Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336NN
301AP
MHL21336NN
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MHL21336N
Abstract: 1800 ldmos
Text: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 7, 8/2006 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336N
MHL21336N
1800 ldmos
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rf6285
Abstract: 915 DCDC RF6280 3g PA amplifier
Text: RFMD 3G Transmit System Family of UMTS Transmit Products for Multiband, Multimode 3G Handsets and Mobile Devices Performance into mismatch The RF6281 and RF6285 are broadband, high-power, high-efficiency linear power amplifier PA modules developed to support multiple bands
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RF6281
RF6285
915 DCDC
RF6280
3g PA amplifier
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 6, 7/2005 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336N
MHL21336.
MHL21336N
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DG09
Abstract: AN-6088 ICC550 an6088 pae12 25PAE
Text: www.fairchildsemi.com AN-6088 FAN5902 Power Management Solution for Improving the Power Efficiency of 3G WCDMA RF Power Amplifiers Abstract This application note provides the basics for implementing a Dynamic Voltage Scaling DVS power management technique with 3G WCDMA RF power amplifiers (PAs) to
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AN-6088
FAN5902
FAN5902,
DG09
AN-6088
ICC550
an6088
pae12
25PAE
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 6, 7/2005 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336N
MHL21336.
MHL21336N
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHL21336/D SEMICONDUCTOR TECHNICAL DATA The RF Line 3G Band RF Linear LDMOS Amplifier MHL21336 Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336/D
MHL21336
301AP
MHL21336
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RF7205
Abstract: RF7200 RF7201 HSPA Module RF7202 RF7203 RF7211 RF720x
Text: RFMD . 3G Product Portfolio: RF720x Family of WCDMA/HSPA+Power Amplifier PA Modules The RF720x family of high-efficiency, linear PA modules is specifically designed for the needs of today’s complex mult-band, multimode 3G mobile devices. Whether single- or dual-band,
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RF720x
50-ohm
RF7200
RF7206
RF7201:
RF7202:
RF7205:
RF7205
RF7201
HSPA Module
RF7202
RF7203
RF7211
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K 3569
Abstract: king 525 MHL21336
Text: MOTOROLA Order this document by MHL21336/D SEMICONDUCTOR TECHNICAL DATA MHL21336 The RF Line 3G Band Linear Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336/D
MHL21336
301AP
K 3569
king 525
MHL21336
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Untitled
Abstract: No abstract text available
Text: Coaxial ZJL-3G+ ZJL-3G Amplifier 50Ω Low Power 20 to 3000 MHz Features • wideband, 20 to 3000 MHz • compact rugged case, 1.07”x0.61” including mounting bracket • low noise figure, 3.8 dB typ. • protected by US Patent, 6,943,629 Connectors SMA
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BW459
2002/95/EC)
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201646B
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65186-11: 330 – 2700 MHz Dual-Channel, Variable Gain Amplifier Front-End Module Applications Description • Cellular, 3G and LTE infrastructure Skyworks SKY65186-11 is a high dynamic range receive Variable Gain Amplifier VGA Front-End Module (FEM) for 3G and LTE
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SKY65186-11:
SKY65186-11
201646B
201646B
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SKY65185: 1.7 – 2.7 GHz Dual-Channel, Variable Gain Amplifier Front-End Module Applications Description • Cellular, 3G and LTE infrastructure Skyworks SKY65185 is a high dynamic range receive Variable Gain Amplifier VGA Front-End Module (FEM) for 3G and LTE
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SKY65185:
SKY65185
01532A
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schematic diagram vga to rf
Abstract: SKY65185
Text: PRELIMINARY DATA SHEET SKY65185: 1.7 – 2.7 GHz Dual-Channel, Variable Gain Amplifier Front-End Module Applications Description • Cellular, 3G and LTE infrastructure Skyworks SKY65185 is a high dynamic range receive Variable Gain Amplifier VGA Front-End Module (FEM) for 3G and LTE
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SKY65185:
SKY65185
32-pin,
01532A
schematic diagram vga to rf
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RF6560
Abstract: RF6260 rfmd RF6560 Coexistence of GSM, WCDMA and LTE Rfmd RFRD6460 LTE rf front end RFRD6460 LTE RF Multiband RF6260 datasheet POWERSMART
Text: RFMD . RFRD6460 3G Multimode, Multi-band PowerSmart Power Platform RFMD’s RFRD6460 3G multi-band, multimode PowerSmart™ Power Platform is targeted at smartphones and mobile internet devices MIDs by providing extensive flexibility and customization,
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RFRD6460
RF6560
RF6260
rfmd RF6560
Coexistence of GSM, WCDMA and LTE
Rfmd RFRD6460
LTE rf front end
LTE RF Multiband
RF6260 datasheet
POWERSMART
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DFE201610
Abstract: DFE20
Text: LM3243 www.ti.com SNVS782B – OCTOBER 2010 – REVISED FEBRUARY 2013 LM3243 High-Current Step-Down Converter for 2G/3G/4G RF Power Amplifiers Check for Samples: LM3243 FEATURES DESCRIPTION • The LM3243 is a DC-DC converter optimized for powering multi-mode 2G/3G/4G RF power amplifiers
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LM3243
SNVS782B
LM3243
DFE201610
DFE20
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MHL21336NN
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data 3G Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity
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MHL21336NN
301AP
MHL21336NN
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