Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    3F TRANSISTOR Search Results

    3F TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3F TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3D smd marking

    Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G


    Original
    PDF BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W 3D smd marking SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW

    BC856BW

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G


    Original
    PDF BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W BC856BW

    BC847B

    Abstract: BC857B BC857B 3F
    Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B • ■ ■ ■


    Original
    PDF BC857B OT-23 BC847B OT-23 BC847B BC857B BC857B 3F

    BC857B

    Abstract: BC847B BC857C
    Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B


    Original
    PDF BC857B OT-23 BC847B OT-23 BC857B BC847B BC857C

    BC857B

    Abstract: MARKING 3F BC847B
    Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B


    Original
    PDF BC857B OT-23 BC847B OT-23 BC857B MARKING 3F BC847B

    BC857BT

    Abstract: No abstract text available
    Text: BC857AT/BT/CT SOT-523 Transistor PNP SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)


    Original
    PDF BC857AT/BT/CT OT-523 OT-523 BC857AT BC857BT BC857CT 857CT -10mA, -100mA,

    Untitled

    Abstract: No abstract text available
    Text: BC857B SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • Type Marking BC857B 3F SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BC847B s t c u


    Original
    PDF BC857B OT-23 BC847B OT-23

    bc860

    Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
    Text: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING


    Original
    PDF BC857/BC858 BC859/BC860 BC857A BC857B BC858A BC860B BC860A BC859B BC859A BC858B bc860 bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A

    bc857b

    Abstract: BC857C BC857C sot23
    Text: BC857B BC857C SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857B 3F BC857C 3G SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS LOW CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE NPN COMPLEMENTARY TYPES ARE


    Original
    PDF BC857B BC857C BC858B BC858C OT-23 BC857C BC857C sot23

    857-B

    Abstract: BC857A BC857B BC857C
    Text: BC857A / BC857B / BC857C BC857A BC857B BC857C C E B SOT-23 Mark: 3E / 3F / 3G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings*


    Original
    PDF BC857A BC857B BC857C BC857A BC857B OT-23 857-B BC857C

    BC857B UNI

    Abstract: BC847 BC857 BC857A BC857B BC858 BC858A BC858B
    Text: BC857 BC858 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K 2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847


    Original
    PDF BC857 BC858 BC857A BC857B BC858A BC858B BC857 BC847 OT-23 BC857B UNI BC847 BC857A BC857B BC858 BC858A BC858B

    pnp 3223

    Abstract: BC857A
    Text: BC857A / BC857B / BC857C BC857A BC857B BC857C C E SOT-23 B Mark: 3E / 3F / 3G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings*


    Original
    PDF BC857A BC857B BC857C OT-23 pnp 3223

    BC856

    Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_


    OCR Scan
    PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC857C BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B

    PACKAGE PANASONIC

    Abstract: TRANSISTORS SELECTION GUIDE
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors for T V and Monitor Display A Tentative (Package Symbol) TOP-3F =TO P-3 Type Full Package, TOP-3 Type Large Package. TO-22Q(F) =TO-22Q Type Full Pack Package. Panasonic


    OCR Scan
    PDF O-22Q PACKAGE PANASONIC TRANSISTORS SELECTION GUIDE

    Untitled

    Abstract: No abstract text available
    Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y-3E CSA1162GR G -3F PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.09 0.48 0.38 3 2.6 2.4 _1.02


    OCR Scan
    PDF CSA1162 CSA1162Y-3E CSA1162GR

    BC856B 3F

    Abstract: 858A
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS A LL DIM ENSIONS IN m m


    OCR Scan
    PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC856B 3F 858A

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


    OCR Scan
    PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275

    Untitled

    Abstract: No abstract text available
    Text: BC856 BC857 BC858 CDIL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M a rk in g BC856 = 3D BC856A - 3A BC856B - 3B BC857 = 3H BC857A = 3E BC857B - 3F BC857C - 3G BC858 - 3M RC858A = 3J BC858B - 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m


    OCR Scan
    PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC857C

    2SD1485

    Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Package (No.) Application • V ceo le VcE(sat) Functions (V ) (A) (V ) General-use Darlington Ib (A) (mA) TOP-3(a) (D64) TOP-3F(a) (D67) 50 7 < 0.8 7 700 100 5


    OCR Scan
    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC3054 2SC4258 2SD1485 2SD2340 equivalent audio Darlington 200 W

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan
    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    2SD2334

    Abstract: 2SD2510 2SD2522 2SD2515 2SD2310 2SD1577 2SD2333 2SD2331 2SD2371 2sd2367
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors for TV and Monitor Display Package (No.) Applica­ tion VcBO ic (V) (A) tf max. 0“S) TOP-3(b) (D65) TO-220F (D60) T0-220(a) (D56) TOP-3F (D 6 7 * , D68) Built-in damper


    OCR Scan
    PDF O-220F T0-220 2SC3737JS 2SC3738 2SC4576 2SC4096 2SD2310 2SD1727 2SD1735 2SD1844 2SD2334 2SD2510 2SD2522 2SD2515 2SD2310 2SD1577 2SD2333 2SD2331 2SD2371 2sd2367

    Untitled

    Abstract: No abstract text available
    Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE O U TLIN E DETAILS ALL DIM EN SION S IN nun Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2.8 0.14 Û.09 0.48 o 3b Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02


    OCR Scan
    PDF CSA1162 CSA1162Y-3E CSA1162GR

    Untitled

    Abstract: No abstract text available
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M ark in g PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H J - 0_ BC857A = 3E 2.8 0 .14 0.48 BC857B = 3F BC857C = 3G 0.38 BC858 = 3M 3 BC858A = 3]


    OCR Scan
    PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC857C

    Untitled

    Abstract: No abstract text available
    Text: ETN36-O3O 300a s < r7 - \ ' 7 > i > X 9 :Z is z L - ) l' : Outline Drawings POWER TRANSISTOR MODULE : Features • High Current • hFE High DC Current Gain •immm Non Insulated Type : Applications High Power Switching • S H ?W iS 3f{K • DC i - • i§ liU !S


    OCR Scan
    PDF ETN36-O3O I95t/R89 Shl50