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    3E TRANSISTOR Search Results

    3E TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3E TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Featrues LMBTH10WT1G z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping LMBTH10WT1G 3E 3000/Tape&Reel LMBTH10WT3G 3E 10000/Tape&Reel 1 2


    Original     		PDF LMBTH10WT1G 3000/Tape LMBTH10WT3G 10000/Tape SC-70/SOTâ 195mm 150mm 3000PCS/Reel

    xc3s500e fg320

    Abstract: xc3s500e VQG100 XC3S500E FGG320 NUMONYX xilinx bpi intel j3d XC3S250E M25PXX xc3s1600e fg320 XC3S500E DS312-3
    Text: Spartan-3E FPGA Family: Data Sheet R DS312 v3.8 August 26, 2009 Product Specification Module 1: Spartan-3E FPGA Family: Introduction and Ordering Information Module 3: DC and Switching Characteristics DS312-1 (v3.8) August 26, 2009 • • • • • •


    Original     		PDF DS312 DS312-1 DS312-3 DS312-2 XC3S500E XC3S1600E VQG100 DS312-4 xc3s500e fg320 xc3s500e VQG100 XC3S500E FGG320 NUMONYX xilinx bpi intel j3d XC3S250E M25PXX xc3s1600e fg320 DS312-3

    XAPP623

    Abstract: XC3S500E-FT256 simulation model electrolytic capacitor XC3S500E FG256 FT256 UG112 XAPP489 hyperlynx PCB echo sound
    Text: Application Note: Spartan-3E Family R Four- and Six-Layer, High-Speed PCB Design for the Spartan-3E FT256 BGA Package XAPP489 v1.0 October 31, 2006 Summary This application note addresses low-cost, four- to six-layer, high-volume printed circuit board (PCB) layout for a Spartan -3E FPGA in the FT256 1 mm BGA package. The impact of highspeed signals and signal integrity (SI) considerations for low layer count PCB layouts is also


    Original     		PDF FT256 XAPP489 FG256 guideliUG112, DS312, XAPP623 XC3S500E-FT256 simulation model electrolytic capacitor XC3S500E UG112 XAPP489 hyperlynx PCB echo sound

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SBOU043B – February 2007 – Revised April 2009 DEM-OPA-SSOP-3E Demonstration Fixture 1 Description The DEM-OPA-SSOP-3E demonstration fixture is a generic, unpopulated printed circuit board PCB for triple 2:1 multiplexers in the SSOP-16 package. Figure 1 shows the package pinout supported by this


    Original     		PDF SBOU043B SSOP-16 SSOP-16

    Untitled

    Abstract: No abstract text available
    Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage


    Original     		PDF FMMTA42 FMMTA92

    FMMTA42

    Abstract: FMMTA92 TS16949 semiconductors 3E
    Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage


    Original     		PDF FMMTA42 FMMTA42 FMMTA92 D-81541 FMMTA92 TS16949 semiconductors 3E

    3D smd marking

    Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G


    Original     		PDF BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W 3D smd marking SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW

    transistor equivalent ksh200

    Abstract: TLE7368G ksh200 equivalent TLE7368 TLE7368-3E TLE7368E TLE7368-2E 4139 sensor ksh200 TRANSISTOR equivalent TLE368E
    Text: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF TLE7368 TLE7368G TLE7368E TLE7368-2E TLE7368-3E transistor equivalent ksh200 TLE7368G ksh200 equivalent TLE7368 TLE7368-3E TLE7368E TLE7368-2E 4139 sensor ksh200 TRANSISTOR equivalent TLE368E

    TLE7368

    Abstract: No abstract text available
    Text: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF TLE7368 TLE7368G TLE7368E TLE7368-2E TLE7368-3E TLE7368

    Untitled

    Abstract: No abstract text available
    Text: U <3E,mi- ~onaiictoi iJ-^ioauati, Line. TELEPHONE: (973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA Silicon NPN Power Transistors 2SC2542 DESCRIPTION With TO-220C package •High voltage ,high speed switching •High reliability


    Original     		PDF 2SC2542 O-220C O-220C)

    BC857BT

    Abstract: No abstract text available
    Text: BC857AT/BT/CT SOT-523 Transistor PNP SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)


    Original     		PDF BC857AT/BT/CT OT-523 OT-523 BC857AT BC857BT BC857CT 857CT -10mA, -100mA,

    BC856BW

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G


    Original     		PDF BC856W OT-323 BC857AW BC856AW BC857BW BC856BW BC857CW BC857W BC858W BC856BW

    BC856

    Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E


    Original     		PDF OT-23 BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E


    Original     		PDF OT-23 BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B

    S29JL032H70

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book


    Original     		PDF PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMTA42 ISSUE 5 – SEPTEMBER 2007 ✪ PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage


    Original     		PDF FMMTA42 FMMTA42R FMMTA92 20MHz

    FMMTA43

    Abstract: FMMTA42R FMMTA42 FMMTA43R FMMTA92 FMMTA93 FMMT-A42R
    Text: FMMTA42 FMMTA43 FMMTA42 FMMTA43 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 – JANUARY 1996 ✪ PARTMARKING DETAIL – FMMTA42 – 3E FMMTA43 – 1E FMMTA42R – 7E FMMTA43R – 5E 160 fT Transition Frequency MHz hFE Static Forward Current Transfer Ratio


    Original     		PDF FMMTA42 FMMTA43 FMMTA42R FMMTA43R FMMTA92 FMMTA43 FMMTA42R FMMTA42 FMMTA43R FMMTA92 FMMTA93 FMMT-A42R

    bc860

    Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
    Text: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING


    Original     		PDF BC857/BC858 BC859/BC860 BC857A BC857B BC858A BC860B BC860A BC859B BC859A BC858B bc860 bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A

    transistor smd 3E

    Abstract: TRANSISTOR SMD 330 TRANSISTOR SMD MARKING CODE EM TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7 free transistor and ic equivalent data SMD Transistor 070 R smd transistor 3K transistor smd 3E npn transistor smd marking NA sot-23
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E VHF/UHF Transistor


    Original     		PDF ISO/TS16949 CMBTH10 OT-23 C-120 CMBTH10Rev190402E transistor smd 3E TRANSISTOR SMD 330 TRANSISTOR SMD MARKING CODE EM TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7 free transistor and ic equivalent data SMD Transistor 070 R smd transistor 3K transistor smd 3E npn transistor smd marking NA sot-23

    00100a05

    Abstract: l0342
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23005-3E ASSP 1 B 1 B 3 V Single Power Supply Audio Interface Unit AIU M B 86437


    OCR Scan     		PDF DS04-23005-3E MB86437 F9707 00100a05 l0342

    CSA1162

    Abstract: CSA1162GR CSA1162Y-3E
    Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSA1162Y-3E CSA1162GR G —3F 3.0_ 2.8 0.48 038 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.8ST


    OCR Scan     		PDF CSA1162 CSA1162Y-3E CSA1162GR CSA1162

    BC856

    Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_


    OCR Scan     		PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC857C BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B

    BC856B

    Abstract: BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    OCR Scan     		PDF BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC857C BC856B BC856A BC857 BC857A BC857B BC857C BC858 BC858A BC858B

    820 572 711

    Abstract: 2SC4321
    Text: 2SC4321 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4321 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ldB, |S2le|2= 13dB f = 1GHz 2.1 ±0.1 1.25 ±0.1 oo + 1 3E- MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4321 SC-70 -j250 820 572 711 2SC4321