W39L020
Abstract: No abstract text available
Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.
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W39L020
W39L020
12-volt
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2Axxx
Abstract: No abstract text available
Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7−DQ0.
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W39L020
W39L020
12-volt
FEAT798
2Axxx
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AT49BV004
Abstract: AT49BV004T AT49BV4096A AT49BV4096AT ut000 4096A
Text: Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks
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AT49BV004
AT49BV4096A
AT49BV4096A-12RC
AT49BV4096A-12TC
44-Lead,
48-Lead,
/4096A
AT49BV004T
AT49BV4096AT
ut000
4096A
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AT49F4096A
Abstract: AT49F4096AT AT49F004 AT49F004T 4096A
Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 55 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks
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AT49F004
AT49F4096A
AT49F4096AT-90RI
AT49F4096AT-90TI
44-Lead,
48-Lead,
/4096A
AT49F4096AT
AT49F004T
4096A
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AT49F004
Abstract: AT49F004T AT49F4096A AT49F4096AT 4096A
Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 55 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks
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AT49F004
AT49F4096A
09/98/xM
AT49F004T
AT49F4096AT
4096A
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tpec
Abstract: XX555 W49L401 W49L401T
Text: W49L401 T 256K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP
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W49L401
12-volt
tpec
XX555
W49L401T
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18XXXh
Abstract: No abstract text available
Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.
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Original
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PDF
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W39L020
12-volt
18XXXh
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W39L020
Abstract: No abstract text available
Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.
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Original
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PDF
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W39L020
W39L020
12-volt
FE798
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W49L401
Abstract: W49L401T
Text: W49L401 T 256K x 16 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP
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W49L401
12-volt
ope798
W49L401T
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18xx
Abstract: Ortec 20XXXh 39xx W39L020-90 3axxx
Text: W39L020 Data Sheet 256K x 8 CMOS FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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W39L020
18xx
Ortec
20XXXh
39xx
W39L020-90
3axxx
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1139A-09
Abstract: 512k x 8 chip block diagram BLOCK DIAGRAM FOR DETECTION of plastics for recycling block diagram of dual 12v power supply 07xxx AT49BV004 AT49BV004T AT49BV4096A AT49BV4096AT 4096A
Text: 2Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks
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AT49BV004
AT49BV4096A
09/98/xM
1139A-09
512k x 8 chip block diagram
BLOCK DIAGRAM FOR DETECTION of plastics for recycling
block diagram of dual 12v power supply
07xxx
AT49BV004T
AT49BV4096AT
4096A
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1690H
Abstract: 79XXX 4096A 3DXXX
Text: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 240K Words (480K bytes) Main Memory Array Block
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OCR Scan
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PDF
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AT49BV004
T49BV4096A
48-Lead,
MO-142
1690H
79XXX
4096A
3DXXX
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49F004
Abstract: 49f004t 4096A
Text: Features * Single Voltage Operation - 5V Read - 5V Programming * Fast Read Access Time - 55 ns * Internal Erase/Program Control * Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks
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OCR Scan
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PDF
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AT49F004
AT49F4096A
48-Lead,
MO-142
49F004
49f004t
4096A
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • ¿lmËL 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks
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OCR Scan
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PDF
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AT49B
48-Lead,
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