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TDK Corporation CK45-B3DD332KYGNA CAP CER 3300PF 2KV RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CK45-B3DD332KYGNA	Bulk	8,334		1	1 $0.66 10 $0.401 100 $0.2628 1000 $0.1895 10000 $0.15974	Buy Now
Avnet Americas	CK45-B3DD332KYGNA	Bulk		10 Weeks	1,000	1 - 10 - 100 - 1000 $0.16816 10000 $0.15195	Buy Now
Mouser Electronics	CK45-B3DD332KYGNA		4,330			1 $0.58 10 $0.296 100 $0.207 1000 $0.173 10000 $0.145	Buy Now
Newark	CK45-B3DD332KYGNA	Bulk	464		1	1 $0.179 10 $0.179 100 $0.164 1000 $0.164 10000 $0.164	Buy Now
Bristol Electronics	CK45-B3DD332KYGNA		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TME	CK45-B3DD332KYGNA				1,000	1 - 10 - 100 - 1000 $0.136 10000 $0.126	Get Quote
Avnet Abacus	CK45-B3DD332KYGNA			15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Corporation CK45-B3DD332KYNNA CAP CER 3300PF 2KV RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CK45-B3DD332KYNNA	Bulk	4,739		1	1 $0.66 10 $0.401 100 $0.2628 1000 $0.1895 10000 $0.15974	Buy Now
Avnet Americas	CK45-B3DD332KYNNA	Bulk		24 Weeks	1,000	1 - 10 - 100 - 1000 $0.16816 10000 $0.15195	Buy Now
Mouser Electronics	CK45-B3DD332KYNNA		1,922			1 $0.59 10 $0.283 100 $0.207 1000 $0.182 10000 $0.159	Buy Now
Newark	CK45-B3DD332KYNNA	Bulk	4,631		1	1 $0.613 10 $0.386 100 $0.282 1000 $0.282 10000 $0.282	Buy Now
Bristol Electronics	CK45-B3DD332KYNNA		10,263			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TME	CK45-B3DD332KYNNA				1,000	1 - 10 - 100 - 1000 $0.164 10000 $0.137	Get Quote
Avnet Abacus	CK45-B3DD332KYNNA			29 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Suntsu Electronics Inc SXT11413DD38-24.000M CRYSTAL 24.000MHZ 13 PF SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SXT11413DD38-24.000M	Bulk	2,728		1	1 $0.65 10 $0.56 100 $0.43 1000 $0.34 10000 $0.34	Buy Now
TDK Corporation CC45SL3DD330JYGNA CAP CER 33PF 2KV SL RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CC45SL3DD330JYGNA	Bulk	2,155		1	1 $0.39 10 $0.229 100 $0.1455 1000 $0.10134 10000 $0.08343	Buy Now
Mouser Electronics	CC45SL3DD330JYGNA		1,029			1 $0.39 10 $0.165 100 $0.112 1000 $0.093 10000 $0.076	Buy Now
Newark	CC45SL3DD330JYGNA	Bulk	400		1	1 $0.365 10 $0.241 100 $0.15 1000 $0.15 10000 $0.15	Buy Now
TTI	CC45SL3DD330JYGNA	Bulk			1,000	1 - 10 - 100 - 1000 $0.071 10000 $0.07	Buy Now
Avnet Abacus	CC45SL3DD330JYGNA			15 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Corporation CK45-B3DD331KYGNA CAP CER 330PF 2KV RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CK45-B3DD331KYGNA	Bulk	1,222		1	1 $0.4 10 $0.233 100 $0.1484 1000 $0.10345 10000 $0.08524	Buy Now
Mouser Electronics	CK45-B3DD331KYGNA		4,852			1 $0.39 10 $0.169 100 $0.115 1000 $0.095 10000 $0.078	Buy Now
Newark	CK45-B3DD331KYGNA	Bulk	1,935		1	1 $0.375 10 $0.25 100 $0.153 1000 $0.153 10000 $0.153	Buy Now
TTI	CK45-B3DD331KYGNA	Bulk			1,000	1 - 10 - 100 - 1000 $0.074 10000 $0.074	Buy Now
Avnet Abacus	CK45-B3DD331KYGNA			23 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Avnet Asia	CK45-B3DD331KYGNA			18 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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3DD3 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
3DD30	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
3DD350NKM18B31562	Infineon Technologies	B6U - Dioden Standard Stack; Package: A-BSKM18-1; Max. rated unit current (A): 660 @ Ta=35°C; Max. rated DC Voltage (V): 670; Overload current 200% 10s, any 10min Ipeak/In (A): 960 / 480; Cooling: forced air cooling; Heatsink: 1 KM18;	Original	PDF
3DD350NKM18B31563	Infineon Technologies	B6U - Dioden Standard Stack; Package: E-EUPEC-0; Max. rated unit current (A): 660 @ Ta=35°C; Max. rated DC Voltage (V): 670; Overload current 200% 10s, any 10min Ipeak/In (A): 960 / 480; Cooling: forced air cooling; Heatsink: 1 KM18;	Original	PDF

3DD3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DD105N16L Abstract: DD55N14L 660v DD31N14L DD31N08L DD55N08L DD76N16L DD76N14L 310f diode 310F Text: B6U - Schaltung Luftselbstkühlung TA = 45 °C verstärkte Luftkühlung TA = 35 °C mit Strangsicherungen click on "Maßbild" No. for download Typenbezeichnung Bauelement Kühlkörper Sicherung B6U 230/310 - 65S - KM33-3DD31N-RCS B6U 230/310 - 100S - KM33-3DD55N-RCS	Original	PDF	KM33-3DD31N-RCS KM33-3DD55N-RCS KM33-3DD76N-RCS KM33-3DD105N-RCS KM17-3DD260N-RCS KM14-3DD85N-LRCS KM14-3DD151N-LRCS KM17-3DD171N-LRCS DD31N08L DD55N08L DD105N16L DD55N14L 660v DD31N14L DD31N08L DD55N08L DD76N16L DD76N14L 310f diode 310F
Untitled Abstract: No abstract text available Text: O0%;87F;?70/3DD3@FK O0-%FA0BBDAH76 O0+&"0E0A?B>;3@F03:;9:0>;@704 O0-@;H7DE3>0"@BGF03F070CF.4 O0!;9:088;5;7@5K O0A!+0A?B>;3@F07E;9@ :0$3-(50(/(054020F22.+&$5+104 35FADK0GFA?3F;A@ ,7EF020&73EGD7?7@F GFA?3F760+7DH;57 !/+DAA7BFAA0+7D;7E	Original	PDF	70/3DD3 BBDAH76 BGF03 F070C 054020F22. 35FADK0 7EF020 73EGD7 3F760 73FGD7E03
3DD303 Abstract: 3DD30 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303B DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications.	Original	PDF	3DD303B 3DD303 3DD30
3DD3853 Abstract: 3DD38 Text: 3DD3853 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features High Current Gain Saturation Voltage Low Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	3DD3853 O-220F O-220F tp300 500mA 300mA 500mA 3DD38
3DD3852 Abstract: 2A1010 3DD38 Text: 华晶分立器件 3DD3852 低频放大管壳额定双极型晶体管 1 概述与特点 3DD3852 硅 NPN 型低频大功率晶体管，主要用于彩色电视机的枕形失真校正电路。其特点如下： ● 高电流增益 ● 饱和压降低 ● 封装形式：TO-220F	Original	PDF	3DD3852 O-220F tp300s 3DD3852 2A1010 3DD38
transistor d325 Abstract: B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A Text: TRANSISTOR TO-220 PLASTIC-ENCAPSULATE BIPOLAR TRANSISTOR HFE PC I C B vcbo B vceo mW (mA) (V) (V) MIN MAX I C (mA) V ce (sat) V ce (V) (V) IC (mA) Ib (mA) fT (MHz) PIN ARRAY SUBSTITUTE TYPE 5 BCE 2SD880 50 BCE 3DD325 200 -500 -3 -1 -1500 -150 50 BCE 3CD511	Original	PDF	O-220 2SD880 3DD325 3CD511 2SB834 TIP31C TIP32C TIP41C TIP42C transistor d325 B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A
3DD3853 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DD3853 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) 1. BASE 2. COLLECTOR	Original	PDF	O-220F 3DD3853 500mA 300mA tp300 3DD3853
3DD3852 Abstract: 3DD38 Text: 3DD3852 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features High Current Gain Saturation Voltage Low Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	3DD3852 O-220F O-220F tp300S, 500mA 300mA 200mA 3DD38
Untitled Abstract: No abstract text available Text: N0A070BA.0!@BGF0FA0&FABFF9!AFB N0&9!0BDD0+:A5=03@60.;4D3F;A@ N03E70B>3F70AA>76 N0G>>0 AI7D03F005BAAM043E70B>3F7 N0;H70173D0/3DD3@FK (80$2,(40(.(/43020F11-+&$4+0/3 3;>I3K0BB>;53F;A@E +G;F34>708AD043FF7DK0BAI7D760D3;>I3K0EKEF7?E (AI7D0(>3@FE	Original	PDF	A070B 3E70B AI7D03F005BAAM 043E70B H70173D0/3DD3 /43020F11-+ 708AD043FF7DK0BAI7D760D3; 73FGD7E03 73FGD7E G3DF7D020
NPN transistor collector base and emitter Abstract: TV power transistor datasheet 3DD303 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303C DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.	Original	PDF	3DD303C NPN transistor collector base and emitter TV power transistor datasheet 3DD303
3DD303A Abstract: CBO 40V CEO 25V EBO 5V 3DD303 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.	Original	PDF	3DD303A 3DD303A CBO 40V CEO 25V EBO 5V 3DD303
DD105N16L Abstract: DD540N22K DD600N08K DD61N14L DD260N16K DD61N08L DD105N DD105N08L DD61N14 DD61N16L Text: B6U - Schaltung Wasserkühlung TW = 25°C click on "Maßbild" No. for download Typenbezeichnung Bauelement Kühlkörper B6U 230/310 - 205W - KW30-3DD61N B6U 230/310 - 280W - KW30-3DD105N B6U 230/310 - 470W - KW61-3DD171N B6U 230/310 - 710W - KW61-3DD260N B6U 230/310 - 950W - KW61-3DD350N	Original	PDF	KW30-3DD61N KW30-3DD105N KW61-3DD171N KW61-3DD260N KW61-3DD350N KW64-3DD600N DD61N08L DD105N08L DD171N08L DD260N08K DD105N16L DD540N22K DD600N08K DD61N14L DD260N16K DD61N08L DD105N DD105N08L DD61N14 DD61N16L
3DD3852 Abstract: 3DD3 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DD3852 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z High Current Gain z Saturation Voltage Low z Power dissipation PCW : 2 W (Tamb=25 ℃) 25 W (Tcase=25℃) 1. BASE 2. COLLECTOR	Original	PDF	O-220F 3DD3852 500mA 300mA 200mA tp300S, 3DD3852 3DD3
3DD301D Abstract: IC 3A 3DD30 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD301D DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 150V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.	Original	PDF	3DD301D 3DD301D IC 3A 3DD30

MSM6411A Abstract: CMOS 4-bit Microcontroller Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.	Original	PDF	MSM6411A DIP16-P-300-2 MSM6411A CMOS 4-bit Microcontroller
RQ3F Abstract: a56 transistor cbb9 68a diode diode 68A 91AB A13A BDAA876 rq-3f RE53 Text: 86/.6 \x1_hdt] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR V dbo EI;F5:;@9 53B34;>;FK t;>7 \|A`lsceefjc V g=/ 6;7>75FD;5 EFD7@9F: \47FI77@ 5A;> 3@6 5A@F35FE] V cb=/ ;?BG>E7 I;F:EF3@6 HA>F397 \47FI77@ 5A;> 3@6 5A@F35FE] t;>7 \|A`l+kkefbjk V 5D77B397 6;EF3@57l j? V ~qp [ q >3KAGFE 3H3;>34>7	Original	PDF	53B34; \47FI77@ F35FE] 5D77B397 63F3E D787D7 67F7D? 75FDA35AGEF RQ3F a56 transistor cbb9 68a diode diode 68A 91AB A13A BDAA876 rq-3f RE53
BDAA876 Abstract: No abstract text available Text: 97.0-7 <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGTURJS U gah=/ 6;7>75FD;5 EFD7@9F: u;>7 \|Aamtdfghdj \47FI77@ 5A;> 3@6 5A@F35FE] D 5 6 U w73HK >A36 GB FA iehc/p U x673> 8AD ?AFAD EI;F5:;@9 u;>7 \|Aam gccegdge U ~rq [ *r >3KAGFE U t@H;DA@?7@F3> 8D;7@6>K BDA6G5F \+Aw, 5A?B>;3@F]	Original	PDF	\47FI77@ F35FE] w73HK 63F3E D787D7 67F7D? 75FDA35AGEF D7E7DH76a BDAA876
6n81 Abstract: No abstract text available Text: Technische Information / technical information IGBT-Module IGBT-modules FS6R06VE3_B2 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43	Original	PDF	FS6R06VE3 1322E14DD BB326 223DB B83DEB2 2313B B83DE14DD BB326134 1231423567896A3B326C4DEF 6n81
Untitled Abstract: No abstract text available Text: JW- 8 9 1993 H a r r is a H I 1Ë 1t 6 6 Ê È È S E M I C O N D U C T O R 8-Bit, 250MSPS Flash A/D Converter ju iy 1993 Features • Description Differential Linearity Error ±0.5 LSB or Less The HI1166 is an 8-bit ultra high speed flash Analog-to-Digital converter IC capable of digitizing analog signals at a max	OCR Scan	PDF	250MSPS HI1166 250MSPS. 100K/10KH/10K. 250MSPS 1-800-4-HARRIS
diode E1110 Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030 Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t	OCR Scan	PDF
HY57V161610B Abstract: No abstract text available Text: C » « Y U H D f t P - - - - - - - - - - • H Y 57V 161610B 2 Banks x S12K X 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V161610B is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610B is organized as 2banks of	OCR Scan	PDF	161610B HY57V161610B 216-bits 288x16 400mil 1Mx16 47M11 1SD22-
msm6404 Abstract: No abstract text available Text: O K I se m ico n d u cto r MSM6404 HIGH-SPEED 4-BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION The OKI M S M 6404 microcontroller is a low power, high-performance single-chip device implemented in complementary metal oxide semiconductor technology. 32K bits of mask program	OCR Scan	PDF	MSM6404 msm6404
7477 D latch Abstract: SAB 3210 MSM6408 i1p32 si117 3DD52 Text: SflE J> m b?24S4D G01371D 7flfl • OKI J O K I semiconductor MSM6408 O K I < /4 SEMICONDUCTOR GROUP HIGH-SPEED 4-BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION T h e O K I M S M 6 4 0 8 m ic ro c o n tro lle r' is a low power, h ig h-perfo rm an ce sin g le -ch ip device	OCR Scan	PDF	MSM6408 24E4D G01371D MSM6408 b724P40 137SG 7477 D latch SAB 3210 i1p32 si117 3DD52
Untitled Abstract: No abstract text available Text: O K I semiconductor MSM6404 HIGH-SPEED 4-BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION The OKI M S M 6404A m icrocontroller Is a low power, high-performance single-chip device implemented in complementary metal oxide semiconductor technology. 32K bits of mask program	OCR Scan	PDF	MSM6404

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3DD3 Search Results

3DD3 Price and Stock

TDK Corporation CK45-B3DD332KYGNA

TDK Corporation CK45-B3DD332KYNNA

Suntsu Electronics Inc SXT11413DD38-24.000M

TDK Corporation CC45SL3DD330JYGNA

TDK Corporation CK45-B3DD331KYGNA

3DD3 Datasheets (3)

3DD3 Datasheets Context Search

DD105N16L

Untitled

3DD303

3DD3853

3DD3852

transistor d325

3DD3853

3DD3852

Untitled

NPN transistor collector base and emitter

3DD303A

DD105N16L

3DD3852

3DD301D

MSM6411A

RQ3F

BDAA876

6n81

Untitled

diode E1110

HY57V161610B

msm6404

7477 D latch

Untitled