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    Jiangsu Changjiang Electronics Technology Co Ltd 3DD13003

    TRANSISTOR (PNP)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics 3DD13003 126,750
    • 1 -
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    • 1000 $0.088
    • 10000 $0.059
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    3DD13003 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3DD13003 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13003 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    3DD13003-TO-126 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13003-TO-220 Jiangsu Changjiang Electronics Technology TRANSISTOR ( NPN ) Original PDF

    3DD13003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D REF. B A B C D E F G H J K Collector 2 E C G H F 3


    Original     		PDF 3DD13003B 400mA 500mA 100mA 100mA, 15-Jun-2011

    3dd13003

    Abstract: No abstract text available
    Text: 华晶分立器件 3DD13003 F6 低频放大管壳额定双极型晶体管 1 概述与特点 4.4max 3DD13003(F6)硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器的功率开关电路 其特点如下 击穿电压高 反向漏电小


    Original     		PDF 3DD13003 3DD13003 O-126

    3dd13003

    Abstract: UI9600
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 3DD13003 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOR • power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter


    Original     		PDF O-220 O-220 3DD13003 100mA, 250mA UI9600) 3DD13003 UI9600

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003N96 TO-92 TRANSISTOR NPN FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original     		PDF 3DD13003N96 250mA UI9600)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13003LD36 TRANSISTOR NPN TO-251 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1.BASE 2.COLLECTOR


    Original     		PDF O-251 3DD13003LD36 O-251 250mA UI9600)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003L3D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original     		PDF O-126 3DD13003L3D O-126 250mA UI9600)

    3DD13003

    Abstract: 3DD13003K7 TO-126F
    Text: 华晶分立器件 3DD13003K7 低频放大管壳额定双极型晶体管 1 概述与特点 3DD13003K7 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器的功率开关电路 其特点如下 高温特性好 开关速度快 饱和压降低 电流特性好


    Original     		PDF 3DD13003K7 O-126F 16min 75max 51max 500mA 250mA 100mA 3DD13003 3DD13003K7 TO-126F

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003L8D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original     		PDF O-126 3DD13003L8D O-126 250mA UI9600)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range


    Original     		PDF O-220 3DD13003 100TYP 540TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR NPN 1. EMITTER FEATURES 2. COLLECTOR • power switching applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 3DD13003B 100mA,

    3DD13003

    Abstract: 3DD13003K8
    Text: 华晶分立器件 3DD13003 K8 低频放大管壳额定双极型晶体管 1 概述与特点 3DD13003K8 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器的功率开关电路 其特点如下 具有击穿电压高 漏电流小 开关速度快


    Original     		PDF 3DD13003 3DD13003K8 O-220AB 250mA 100mA 3DD13003K8

    3DD13003B

    Abstract: 3DD13003 npn transistors 400V 1A To92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR NPN TO-92 FEATURES 1. EMITTER • power switching applications 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BASE Symbol Parameter


    Original     		PDF 3DD13003B 100mA, 3DD13003B 3DD13003 npn transistors 400V 1A To92

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 3DD13003B TRANSISTOR NPN TO-92 FEATURES • 1. EMITTER High total power disspation.(pc=0.75w) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 3DD13003B 1000mA 1000mA, 250mA 100mA

    3DD13002

    Abstract: 3DD13003
    Text: 华晶分立器件 3DD13003 B6 低频放大管壳额定双极型晶体管 1 概述与特点 3DD13003 B6 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器及手机充电器的 功率开关电路 其特点如下 击穿电压高 反向漏电小


    Original     		PDF 3DD13003 O-126 200mA 200mA, 3DD13002

    3dd13003

    Abstract: No abstract text available
    Text: 3DD13003 3DD13003 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. BASE Collector current ICM: 1.5 A Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 3DD13003 O-126 1000mA 1000mA, 250mA 100mA 3dd13003

    7400

    Abstract: 3dd13003
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR（ NPN ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 700 V


    Original     		PDF O-126 3DD13003 O--126 mA25-30 290TYP 090TYP 7400 3dd13003

    3dd13003

    Abstract: TRANSISTOR npn ic 1000ma NPN Transistor 1.5A 400V
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13003 TO-220 TRANSISTOR NPN FEATURES 1. BASE • power switching applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Parameter


    Original     		PDF O-220 3DD13003 O-220 1000mA 1000mA, 250mA 100mA 3dd13003 TRANSISTOR npn ic 1000ma NPN Transistor 1.5A 400V

    Untitled

    Abstract: No abstract text available
    Text: WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • power switching applications TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF 3DD13003B 100mA, 10-Nov-2010 270TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13003LD16 TO-92 TRANSISTOR NPN 1. BASE FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 2. COLLECTOR


    Original     		PDF 3DD13003LD16 250mA UI9600)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3DD13003F TRANSISTOR NPN TO-220F FEATURE Power Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage


    Original     		PDF O-220F 3DD13003F O-220F 250mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors TO-251-3L/TO-252-2L 3DD13003 TRANSISTOR NPN FEATURES Power Switching Applications MAXIMUM RATINGS(TA=25 ℃ unless otherwise noted) Symbol Parameter


    Original     		PDF O-251-3L/TO-252-2L O-251-3L/TO-252-2L 3DD13003

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 3DD13003 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOR • power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter


    Original     		PDF O-220-3L O-220-3L 3DD13003 100mA, 250mA UI9600)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TO-220 3DD13003 TRANSISTOR NPN 1. BASE FEATURES 2. COLLECTOR • power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter


    Original     		PDF O-220 O-220 3DD13003 100mA, 250mA UI9600)

    TP220 transistor

    Abstract: TP220
    Text: M C C TP-220 P lastic-E n cap su late T r a n s is t o r s ^ 3DD13003 TRANSISTOR NPN F E ATURE S ( . I1 W _ nation J _ T0-220 Pcm: S^iirrent 1. B A S E tt +i Ic 2.C O L L E C T O R ; 1.5 A V (B R )C B O ; LU LU UJ 2 m Collector-base voltage 3.E M I T T E R


    OCR Scan     		PDF TP-220 3DD13003 T0-220 3DD13003 TP220 transistor TP220