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    3C000 Search Results

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    8A34003C-000NBG# Renesas Electronics Corporation System Synchronizer for IEEE 1588 - Four Channels Visit Renesas Electronics Corporation
    8A34013C-000NBG8 Renesas Electronics Corporation Line Card Synchronizer for IEEE 1588 - Four Channels Visit Renesas Electronics Corporation
    8A34013C-000NBG# Renesas Electronics Corporation Line Card Synchronizer for IEEE 1588 - Four Channels Visit Renesas Electronics Corporation
    8A34043C-000NBG Renesas Electronics Corporation Multichannel DPLL / DCO - Four Channels Visit Renesas Electronics Corporation
    8A34003C-000NBG Renesas Electronics Corporation System Synchronizer for IEEE 1588 - Four Channels Visit Renesas Electronics Corporation
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    3C000 Price and Stock

    Murata Manufacturing Co Ltd CSTNE16M0VH3C000R0

    CERAMIC RES 16.0000MHZ 15PF SMD
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    DigiKey CSTNE16M0VH3C000R0 Reel 90,000 3,000
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    Mouser Electronics CSTNE16M0VH3C000R0 60,253
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    CSTNE16M0VH3C000R0 Cut Tape 4,675 5
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    TTI CSTNE16M0VH3C000R0 Reel 246,000 3,000
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    TME CSTNE16M0VH3C000R0 2,545 1
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    Chip1Stop CSTNE16M0VH3C000R0 Cut Tape 215
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    Murata Manufacturing Co Ltd CSTNE20M0VH3C000R0

    CERAMIC RES 20.0000MHZ 15PF SMD
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    DigiKey CSTNE20M0VH3C000R0 Digi-Reel 10,029 1
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    CSTNE20M0VH3C000R0 Cut Tape 10,029 1
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    CSTNE20M0VH3C000R0 Reel 9,000 3,000
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    Mouser Electronics CSTNE20M0VH3C000R0 12,363
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    Newark CSTNE20M0VH3C000R0 Cut Tape 560 5
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    TTI CSTNE20M0VH3C000R0 Reel 12,000 3,000
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    TME CSTNE20M0VH3C000R0 3,440 1
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    Avnet Abacus CSTNE20M0VH3C000R0 11 Weeks 3,000
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    Chip1Stop CSTNE20M0VH3C000R0 Cut Tape 1,955
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    Murata Manufacturing Co Ltd CSTNE18M4V53C000R0

    CERAMIC RES 18.4320MHZ 15PF SMD
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    DigiKey CSTNE18M4V53C000R0 Cut Tape 8,305 1
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    Mouser Electronics CSTNE18M4V53C000R0 6,414
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    Murata Manufacturing Co Ltd CSTNE24M0VH3C000R0

    3.2X1.3MM 24.0MHZ CERAMIC RESONA
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    DigiKey CSTNE24M0VH3C000R0 Digi-Reel 5,823 1
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    CSTNE24M0VH3C000R0 Cut Tape 5,823 1
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    CSTNE24M0VH3C000R0 Reel 3,000 3,000
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    Mouser Electronics CSTNE24M0VH3C000R0 5,017
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    Newark CSTNE24M0VH3C000R0 Reel 3,000 3,000
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    CSTNE24M0VH3C000R0 Cut Tape 1,065 5
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    TME CSTNE24M0VH3C000R0 3,000
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    Avnet Abacus CSTNE24M0VH3C000R0 11 Weeks 3,000
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    Murata Manufacturing Co Ltd CSTNE14M7V53C000R0

    CERAMIC RES 14.7460MHZ 15PF SMD
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    DigiKey CSTNE14M7V53C000R0 Cut Tape 5,240 1
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    CSTNE14M7V53C000R0 Digi-Reel 5,240 1
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    CSTNE14M7V53C000R0 Reel 3,000 3,000
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    Mouser Electronics CSTNE14M7V53C000R0 4,521
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    Newark CSTNE14M7V53C000R0 Cut Tape 5,700 5
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    CSTNE14M7V53C000R0 Reel 3,000 3,000
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    TTI CSTNE14M7V53C000R0 Reel 3,000
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    TME CSTNE14M7V53C000R0 3,000
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    Avnet Abacus CSTNE14M7V53C000R0 11 Weeks 3,000
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    3C000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


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    PDF 78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    PDF W19B320AT/B w19b320

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


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    PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    am29f400bb

    Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
    Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements


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    PDF Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb am29f400bb v am29f400 known good AM29F400B7 20185 AM29F400BT

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    amic a290021t-70

    Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
    Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current


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    PDF A29002/A290021 amic a290021t-70 A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


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    PDF Am29LV200 8-Bit/128 16-Bit)

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


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    PDF W28J320B/T 16/4M

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)


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    PDF S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R

    DDA 003A

    Abstract: CON12 M68HC11 MC68HC11C0 MC68HC11C0CFN2 MC68HC11C0CFU2 MC68HC11C0CFU3 MC68HC11C0FU3 MC68HC11C0MFU2 MC68HC11C0VFN2
    Text: MOTOROLA Order this document by MC68HC11C0TS/D SEMICONDUCTOR TECHNICAL DATA MC68HC11C0 Technical Summary 8-Bit Microcontroller 1 Introduction The MC68HC11C0 high-performance microcontroller unit MCU is an enhanced member of the M68HC11 family of microcontrollers. Excluding its new features, the MC68HC11C0 is very similar to


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    PDF MC68HC11C0TS/D MC68HC11C0 MC68HC11C0 M68HC11 MC68HC11E9 64Kbyte MPC505TS/D DDA 003A CON12 MC68HC11C0CFN2 MC68HC11C0CFU2 MC68HC11C0CFU3 MC68HC11C0FU3 MC68HC11C0MFU2 MC68HC11C0VFN2

    Untitled

    Abstract: No abstract text available
    Text: ADS1255 ADS1256 SBAS288E − JUNE 2003 − REVISED APRIL 2005 Very Low Noise, 24ĆBit AnalogĆtoĆDigital Converter FEATURES D 24 Bits, No Missing Codes DESCRIPTION The ADS1255 and ADS1256 are extremely low-noise, 24-bit analog-to-digital A/D converters. They provide


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    PDF ADS1255 ADS1256 SBAS288E 24Bit 30kSPS ADS1256 24-bit

    ba qu

    Abstract: TC58F401
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION


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    PDF TC58F400F TC58F401F BITS/262 TC58F400/401 TC58F4 TC58F400) 00000h 01FFFh 02000h ba qu TC58F401

    29F032B

    Abstract: m29f032b
    Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology


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    PDF Am29F032B 20-year 29F032B 29F032B m29f032b

    Untitled

    Abstract: No abstract text available
    Text: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance


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    PDF Am29F200A 8-Bit/128 16-Bit)

    am29f400bb

    Abstract: No abstract text available
    Text: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements


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    PDF Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb

    L323C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


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    PDF Am29DL32xC 16-Bit) 29DL32xC L323C

    am29f400b

    Abstract: am29f400bb 22AB AM29F400BT
    Text: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations


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    PDF Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb 22AB AM29F400BT

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements


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    PDF Am29F200AT/Am29F200AB 44-pin 48-pin

    032XM

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


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    PDF Am29LV033C 63-ball 40-pin 032XM