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    3B8000 Price and Stock

    Abracon Corporation ABM3B-8.000MHZ-B2-T

    CRYSTAL 8.0000MHZ 18PF SMD
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    DigiKey ABM3B-8.000MHZ-B2-T Cut Tape 142,960 1
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    ABM3B-8.000MHZ-B2-T Digi-Reel 142,960 1
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    ABM3B-8.000MHZ-B2-T Reel 142,000 1,000
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    Avnet Americas ABM3B-8.000MHZ-B2-T Reel 8,000 12 Weeks 1,000
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    ABM3B-8.000MHZ-B2-T Ammo Pack 41 Weeks, 3 Days 1
    • 1 $0.796
    • 10 $0.626
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    Newark ABM3B-8.000MHZ-B2-T Cut Tape 24,294 1
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    ABM3B-8.000MHZ-B2-T Reel 1,000 1,000
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    ABM3B-8.000MHZ-B2-T Reel 1,000
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    RS ABM3B-8.000MHZ-B2-T Bulk 890 12 Weeks 1
    • 1 $0.646
    • 10 $0.549
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    Bristol Electronics ABM3B-8.000MHZ-B2-T 840 6
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    ABM3B-8.000MHZ-B2-T 420
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    ABM3B-8.000MHZ-B2-T 303
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    TME ABM3B-8.000MHZ-B2-T 5,805 1
    • 1 $0.561
    • 10 $0.409
    • 100 $0.333
    • 1000 $0.295
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    Chip 1 Exchange ABM3B-8.000MHZ-B2-T 2,460
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    Avnet Abacus ABM3B-8.000MHZ-B2-T Reel 192,000 14 Weeks 1,000
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    Avnet Asia ABM3B-8.000MHZ-B2-T 12 Weeks 1,000
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    Chip-Germany GmbH ABM3B-8.000MHZ-B2-T 41
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    Chip1Stop ABM3B-8.000MHZ-B2-T Cut Tape 699
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    Master Electronics ABM3B-8.000MHZ-B2-T 10,622
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    New Advantage Corporation ABM3B-8.000MHZ-B2-T 115,000 1
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    Sager ABM3B-8.000MHZ-B2-T 4,000 1,000
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    Win Source Electronics ABM3B-8.000MHZ-B2-T 10,000
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    Abracon Corporation ABM3B-8.000MHZ-10-1-U-T

    CRYSTAL 8.0000MHZ 10PF SMD
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    DigiKey ABM3B-8.000MHZ-10-1-U-T Cut Tape 64,230 1
    • 1 $0.73
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    ABM3B-8.000MHZ-10-1-U-T Digi-Reel 64,230 1
    • 1 $0.73
    • 10 $0.634
    • 100 $0.5306
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    ABM3B-8.000MHZ-10-1-U-T Reel 64,000 1,000
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    Avnet Americas ABM3B-8.000MHZ-10-1-U-T Reel 7,000 12 Weeks 1,000
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    Newark ABM3B-8.000MHZ-10-1-U-T Reel 5,000 1,000
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    ABM3B-8.000MHZ-10-1-U-T Reel 1,000
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    ABM3B-8.000MHZ-10-1-U-T Cut Tape 1
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    RS ABM3B-8.000MHZ-10-1-U-T Bulk 12 Weeks 1,000
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    Bristol Electronics ABM3B-8.000MHZ-10-1-U-T 456
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    TME ABM3B-8.000MHZ-10-1-U-T 2,382 1
    • 1 $1.517
    • 10 $0.706
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    Avnet Abacus ABM3B-8.000MHZ-10-1-U-T Reel 49,000 14 Weeks 1,000
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    Avnet Asia ABM3B-8.000MHZ-10-1-U-T 12 Weeks 1,000
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    Chip1Stop ABM3B-8.000MHZ-10-1-U-T Cut Tape 114
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    Master Electronics ABM3B-8.000MHZ-10-1-U-T 9,000
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    New Advantage Corporation ABM3B-8.000MHZ-10-1-U-T 103,000 1
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    Win Source Electronics ABM3B-8.000MHZ-10-1-U-T 21,524
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    Abracon Corporation ABM3B-8.000MHZ-10-D1G-T

    CRYSTAL 8.0000MHZ 10PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ABM3B-8.000MHZ-10-D1G-T Cut Tape 43,282 1
    • 1 $0.73
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    ABM3B-8.000MHZ-10-D1G-T Digi-Reel 43,282 1
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    • 10 $0.634
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    ABM3B-8.000MHZ-10-D1G-T Reel 43,000 1,000
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    Avnet Americas ABM3B-8.000MHZ-10-D1G-T Reel 12 Weeks 1,000
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    Newark ABM3B-8.000MHZ-10-D1G-T Reel 1,000 1,000
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    RS ABM3B-8.000MHZ-10-D1G-T Bulk 12 Weeks 1,000
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    TME ABM3B-8.000MHZ-10-D1G-T 76,812
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    Avnet Abacus ABM3B-8.000MHZ-10-D1G-T Reel 161,000 14 Weeks 1,000
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    Avnet Asia ABM3B-8.000MHZ-10-D1G-T 12 Weeks 1,000
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    Master Electronics ABM3B-8.000MHZ-10-D1G-T 77,612
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    New Advantage Corporation ABM3B-8.000MHZ-10-D1G-T 41,000 1
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    Abracon Corporation ABM3B-8.000MHZ-D4Y-T

    CRYSTAL 8.000MHZ 18PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ABM3B-8.000MHZ-D4Y-T Digi-Reel 894 1
    • 1 $0.73
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    ABM3B-8.000MHZ-D4Y-T Cut Tape 894 1
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    Mouser Electronics ABM3B-8.000MHZ-D4Y-T
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    Newark ABM3B-8.000MHZ-D4Y-T Reel 1,000
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    Avnet Abacus ABM3B-8.000MHZ-D4Y-T Reel 1,000 14 Weeks 1,000
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    Abracon Corporation ABM3B-8.000MHZ-D2Y-T

    CRYSTAL 8.0000MHZ 18PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ABM3B-8.000MHZ-D2Y-T Cut Tape 336 1
    • 1 $0.73
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    ABM3B-8.000MHZ-D2Y-T Digi-Reel 336 1
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    Chip-Germany GmbH ABM3B-8.000MHZ-D2Y-T 246
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    Master Electronics ABM3B-8.000MHZ-D2Y-T 5,700
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    3B8000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


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    PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


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    PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    PDF EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000

    110R

    Abstract: S29GL128N
    Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV6402M S29GL128N 110R

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    PDF Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G

    LH28F640BFHG-PBTL70A

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


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    PDF LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A

    LRS1830

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.


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    PDF LRS1830 LRS1830) EL14Z046 LRS1830

    M29W640DB

    Abstract: M29W640D M29W640DT A0-A21 6A000
    Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns


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    PDF M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000

    M420000000

    Abstract: FSB073 3FE00
    Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector


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    PDF Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


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    PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    LHF12F16

    Abstract: wp 146 LH28F128BFHT-PTTL75A
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


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    PDF LH28F128BFHT-PTTL75A LHF12F16) FM046010 LHF12F16 LHF12F16 wp 146 LH28F128BFHT-PTTL75A

    BGA-101P-M01

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM


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    PDF DS05-50208-2E MB84LD23381EJ-10 101-ball BGA-101P-M01

    BA102

    Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
    Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.


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    PDF TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96

    MX29LV640D

    Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
    Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales


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    PDF MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX

    MX29LV640ebt

    Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
    Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


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    PDF MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


    Original
    PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    FTA073

    Abstract: No abstract text available
    Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original
    PDF Am50DL128BH FTA073--73-Ball FTA073

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original
    PDF Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640

    Untitled

    Abstract: No abstract text available
    Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words


    Original
    PDF M29DW640F TSOP48 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original
    PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56