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    BUZ94

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ94_ N AMER PHILIPS/DISCRETE QtE D • L 3S3T31 0014b75 4 ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF BUZ94_ 3S3T31 0014b75 BUZ94 T-39-13 bb53T31 0014bfll BUZ94

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DL.E D • ^ 5 3 ^ 3 1 0011351 7 ■ BYV33 SERIES _ J y T-03-19 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward


    OCR Scan     		PDF BYV33 T-03-19 bbS3T31 bb53T31 D0113ST

    BUK457-500A

    Abstract: BUK457-500B
    Text: N AMER PHILIPS/D ISCR ETE SSE D • bbSBTBl 00S05SS 2 ■ PowerMOS transistor BUK457-500A BUK457-500B V -2 ? -l3 GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 00S05SS BUK457-500A BUK457-500B BUK457 -500A -500B T--39--13 BUK457-500B