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    BY360

    Abstract: No abstract text available
    Text: LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE BOND PAD • DIE SIZE: 15.4X14.2 mils 390x360 µm


    Original     		PDF LPA6836V 390x360 75x75 LPA6836V BY360

    pHEMT transistor 360

    Abstract: FPA683
    Text: LPA6836V Preliminary Data Sheet MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE


    Original     		PDF LPA6836V 390x360 75x75 FPA6836V resistance18 pHEMT transistor 360 FPA683