multibus ARCHITECTURE
Abstract: mcbsp tms 6000
Text: TMS320VC5416 FIXED-POINT DIGITAL SIGNAL PROCESSOR SPRS095B – MARCH 1999 – REVISED OCTOBER 1999 D D D D D D D D D D D D D Advanced Multibus Architecture With Three Separate 16-Bit Data Memory Buses and One Program Memory Bus 40-Bit Arithmetic Logic Unit ALU
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TMS320VC5416
SPRS095B
16-Bit
40-Bit
17-Bit
multibus ARCHITECTURE
mcbsp tms 6000
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Untitled
Abstract: No abstract text available
Text: TMS320VC5416 FIXEDĆPOINT DIGITAL SIGNAL PROCESSOR SPRS095E – MARCH 1999 – REVISED MAY 2000 D D D D D D D D D D D D D Separate 16-Bit Data Memory Buses and One Program Memory Bus 40-Bit Arithmetic Logic Unit ALU Including a 40-Bit Barrel Shifter and Two
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TMS320VC5416
SPRS095E
16-Bit
40-Bit
17-Bit
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TMS320VC541
Abstract: No abstract text available
Text: SM320VC5416-EP Fixed-Point Digital Signal Processor Data Manual Literature Number: SGUS048 July 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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SM320VC5416-EP
SGUS048
MTQF017A
S-PQFP-G144)
MS-026
TMS320VC541
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Untitled
Abstract: No abstract text available
Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function
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78K0R/KE3
16-bit
PD78F1142
PD78F1143
PD78F1144
PD78F1145
PD78F1146
78K0R/KE3
U17854EJ6V0UD00
U17854EJ6V0UD
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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amic a290021t-70
Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29002/A290021
amic a290021t-70
A290021T-70
A290021TL-70
A29002
A290021
A290021L
IN3064
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Untitled
Abstract: No abstract text available
Text: TMS320VC5416 Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS095O March 1999 – Revised January 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not
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TMS320VC5416
SPRS095O
SPRS095N
SPRS095O
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV200
8-Bit/128
16-Bit)
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80C186
Abstract: 80C188 R8810LV
Text: RDC R8810LV RISC DSP Controller R8810LV 16-Bit RISC Microcontroller User’s Manual RDC RISC DSP Controller RDC Semiconductor Co., Ltd http:\\www.rdc.com.tw Tel. 886-3-666-2866 Fax 886-3-563-1498 Rev:1.4 RDC Semiconductor Co. Subject to change without notice
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R8810LV
16-Bit
80C186
80C188
R8810LV
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msc 5511
Abstract: TMS320VC541
Text: TMS320VC5416 Fixed-Point Digital Signal Processor Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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TMS320VC5416
SPRS095P
TMS320VC5416
SPRS095P
SPRS095O
msc 5511
TMS320VC541
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tr8c
Abstract: TMS28F200
Text: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture
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TMS28F20
TMS28F200BZB
8-BIT/131072
16-BIT
96K-Byte
128K-Byte
16K-Byte
28F200B2x70
28F200BZX80
28F200BZX90
tr8c
TMS28F200
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ba qu
Abstract: TC58F401
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION
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TC58F400F
TC58F401F
BITS/262
TC58F400/401
TC58F4
TC58F400)
00000h
01FFFh
02000h
ba qu
TC58F401
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Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
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CFL blast circuit information
Abstract: AM486DX5-133V16BHC kfn 332 smt cpu 486 dx5 TL920 design of 18 x 16 barrel shifter in computer arch 486DX MEMORY CONTROLLER tr3 5m a17
Text: A M Dii PRELIMINARY Enhanced Am486 DX Microprocessor Family DISTINCTIVE CHARACTERISTICS - Industry-standard two-pin System Management Interrupt SMI for power management indepen dent of processor operating mode and operating system - 105.6-million bytes/second burst bus at 33 MHz
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Am486
32-bit
Am486DX
208-Lead
PDE-208)
16-038-PR
DY112
FusionE86
CFL blast circuit information
AM486DX5-133V16BHC
kfn 332 smt
cpu 486 dx5
TL920
design of 18 x 16 barrel shifter in computer arch
486DX MEMORY CONTROLLER
tr3 5m a17
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Am29DL400BT
Abstract: No abstract text available
Text: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,
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Am29DL400B
16-Bit)
44-Pin
16-038-S044-2
Am29DL400BT
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amd 29F400AB
Abstract: 29F400AT 29F400AB
Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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Am29F400AT/Am29F400AB
S-Bit/262
16-Bit)
44-pin
48-pin
Am29F400AT/Am
29F400AB
Am29F400T/Am29F400B
18612B.
amd 29F400AB
29F400AT
29F400AB
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Untitled
Abstract: No abstract text available
Text: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance
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Am29F200A
8-Bit/128
16-Bit)
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am29f400bb
Abstract: No abstract text available
Text: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
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Untitled
Abstract: No abstract text available
Text: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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Am29F200T/Am29F200B
8-BII/131
16-Blt)
44-pin
48-pin
Am29F200
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am29f400b
Abstract: am29f400bb 22AB AM29F400BT
Text: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
22AB
AM29F400BT
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements
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Am29F200AT/Am29F200AB
44-pin
48-pin
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