Teledyne Wireless
Abstract: No abstract text available
Text: Product Information ISO 9001 CERTIFIED 6001 5.150 to 5.300 GHz GaAs MMIC Hiperlan Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +23 dBm Output Power @1 dB Gain Compression 23 dB Minimum Small Signal Gain 34dBm Third Order Intercept Point Surface Mount, Thermally Optimum
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34dBm
33dBm.
Teledyne Wireless
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DB35T
Abstract: mitsubishi lot code RF MOSFET MODULE MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz transistor marking zg Mitsubishi transistor rf final H46S RA02M8087MD RA02M8087MD-101 MOSFET AMPLIFIER For MOBILE RADIO 869 MHz
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA02M8087MD RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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RA02M8087MD
806-869MHz
34dBm
RA02M8087MD
34dBm
16dBm
300mA
-26dBc
DB35T
mitsubishi lot code
RF MOSFET MODULE
MOSFET AMPLIFIER 3 Stage For MOBILE RADIO 869 MHz
transistor marking zg
Mitsubishi transistor rf final
H46S
RA02M8087MD-101
MOSFET AMPLIFIER For MOBILE RADIO 869 MHz
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spf-5043
Abstract: SPF5043Z SPF 5043Z SPF5043 spf-5043z amplifier 900mhz
Text: Preliminary SPF-5043Z 500-2500 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5043Z is a fully matched ultra-low noise, high linearity MMIC LNA designed for 500-2500 MHz operation. It delivers 1.0dB noise figure and 34dBm OIP3 at 1900 MHz 5V,45mA . It is housed in an industry standard
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SPF-5043Z
SPF-5043Z
34dBm
OT-343
SPF5043Z
900MHz
900MHz
34dBm
1900MHz
spf-5043
SPF 5043Z
SPF5043
amplifier 900mhz
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5W 47 ohm
Abstract: No abstract text available
Text: 3.5 GHz InGaP HBT 5W Linear Power Amplifier CHV2711-QJ June 2006 - Rev 30-Jun-06 Features Internal Pre-matching Single Supply operation Power Gain 9.5dB Intermodulation Distortion -30dBc @ 34dBm per tone ESD Protection on board Current Control for multiple applications
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30-Jun-06
-30dBc
34dBm
CHV2711-QJ
CHV2710
CHV2711
5W 47 ohm
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walkie-talkie schematic
Abstract: No abstract text available
Text: RF6886 RF68863.6V, 100MHz to 1000 MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features 100MHz to 1000MHz Single 3.6V Power Supply 34dBm OP1dB 36.5dBm Saturated Output Power >50% Efficiency 23 22 21 20 Vreg1
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RF6886
RF68863
100MHz
1000MHz
34dBm
1000MHz
24-Pin,
DS140303
walkie-talkie schematic
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walkie-talkie schematic
Abstract: RF6886 RF6886PCK-411 450MHz CDMA Handset Circuit Diagram RF6886PCK-410 walkie-talkie main components walkie-talkie diagram walkie-talkie 900Mhz 433MHZ amplifier schematic RF6886SR
Text: RF6886 RF68863.6V, 100MHz to 1000 MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features 100MHz to 1000MHz Single 3.6V Power Supply 34dBm OP1dB 36.5dBm Saturated Output Power >50% Efficiency 23 22 21 20 Vreg1
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RF6886
RF68863
100MHz
1000MHz
34dBm
1000MHz
24-Pin,
450MHz
walkie-talkie schematic
RF6886
RF6886PCK-411
450MHz CDMA Handset Circuit Diagram
RF6886PCK-410
walkie-talkie main components
walkie-talkie diagram
walkie-talkie 900Mhz
433MHZ amplifier schematic
RF6886SR
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100C
Abstract: TGA1141
Text: Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1.5A Primary Applications • Military Radar Systems
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TGA1141
33dBm
34dBm
880mA
0007-inch
100C
TGA1141
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NN12
Abstract: P35-4232-C06-200
Text: P35-4232-C06-200 GaAs MMIC 2W SPDT REFLECTIVE SWITCH, DC - 6GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Positive or negative voltage operation • High compression point; 34dBm typ
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P35-4232-C06-200
34dBm
P35-4232-C06-200
463/SM/00151/200
NN12
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Untitled
Abstract: No abstract text available
Text: Advance Product Information February 27, 2003 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
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TGA1141-EPU
33dBm
34dBm
880mA
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information August 26, 2002 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
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TGA1141-EPU
33dBm
34dBm
880mA
0007-inch
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Untitled
Abstract: No abstract text available
Text: RFSW6223 RFSW6223 F9999 DPDT SYMMETRIC SWITCH 10MHZ TO 6000MHZ NC NC V2 Package: QFN, 12-Pin, 3.0mmx3.0mm 9 8 7 Features Symmetric DPDT Low Loss: 0.65dB 2GHz Isolation: 33dB (2GHz) High IP3: 56dBm High P1dB: 34dBm at 3V Positive Logic Control
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RFSW6223
F9999
RFSW6223
10MHZ
6000MHZ
12-Pin,
6000MHz
56dBm
34dBm
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VP 1176
Abstract: VP 1176 datasheet TGF4250-EEU TriQuint Semiconductor bvgs VP+1176
Text: Product Data Sheet March 16, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications
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TGF4250-EEU
34dBm
TGF4250-EEU
VP 1176
VP 1176 datasheet
TriQuint Semiconductor
bvgs
VP+1176
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EUDYNA
Abstract: FRM5W232FY
Text: InGaAs-PIN/Preamp Receiver FRM5W232FY FEATURES • 5-pin coaxial ROSA Receiver Optical Subassembly with LC receptacle • InGaAs-PIN PD with 3.3V pre-amplfier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ.
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FRM5W232FY
-34dBm
550nm
coa4888
EUDYNA
FRM5W232FY
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Untitled
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER T M D 1925-3 MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pr e l i m i n a r y FEATURES n Suitable for Digital Communications n High Power P1dB=34dBm min @ 1.9 to 2.5GHz n Low Intermodulation Distortion n High Gain G1dB=27dB(min) @ 1.9 to 2.5GHz
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34dBm
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TMD2121-3A
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD2121-3A TMD2121-3A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES Suitable for W-CDMA High Gain G1dB=27dB min High Power P1dB=34dBm(min) Low Intermodulation Distortion ABSOLUTE MAXIMUM RATINGS ( Ta= 25°°C )
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TMD2121-3A
34dBm
TMD2121-3A
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FPD750SOT89
Abstract: No abstract text available
Text: EB750SOT89BB FPD750SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 23.5dBm Output Power • 23dB Gain ¥ 0.6dB Noise Figure ¥ 34dBm OIP3 measured at 10dBm per tone ¥ Bias Vd = 5V, Id = 100mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB750SOT89BB
FPD750SOT89
34dBm
10dBm
100mA,
FPD750SOT89;
30mil
LL1608
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TMD5872-2
Abstract: No abstract text available
Text: MICROWAVE POWER MMIC AMPLIFIER TMD5872-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n High Power P1dB=34dBm TYP. n High Gain G1dB=28dB(TYP.) n High Power Added Efficiency ηadd=21%(TYP.) n Broadband Operation f=5.8-7.2GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC)
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TMD5872-2
34dBm
11pin:
000pF
TMD5872-2
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walkie-talkie schematic
Abstract: RF6886 RF6886PCK-410 RF6886PCK-411 450MHz CDMA Handset Circuit Diagram walkie-talkie circuit walkie-talkie main components walkie-talkie 900Mhz RF68863 3000mA power bank
Text: RF6886 RF68863.6V, 100MHz to 1000MHz Linear Power Amplifier 3.6V, 100MHz TO 1000MHz LINEAR POWER AMPLIFIER Features Vcc 100MHz to 1000MHz Single 3.6V Power Supply 34dBm OP1dB Vreg1 22 21 20 19 1 18 RFout Bias 23 NC 24 NC VBias Pwr Ref Package: QFN, 24-Pin, 4mmx4mm
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RF68863
100MHz
1000MHz
RF6886
24-Pin,
34dBm
walkie-talkie schematic
RF6886
RF6886PCK-410
RF6886PCK-411
450MHz CDMA Handset Circuit Diagram
walkie-talkie circuit
walkie-talkie main components
walkie-talkie 900Mhz
3000mA power bank
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367589 123456367589 RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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806-869MHz
34dBm
RA02M8087MD
34dBm
300mA
-26dBc
31dBm
RA02M8087MD
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frm5w23
Abstract: No abstract text available
Text: InGaAs-APD/Preamp Receiver FRM5W232HZ FEATURES • InGaAs-APD with 3.3V pre-amplifier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ. • 5-pin coaxial package • Operating Case Temperature: -40°C to 85°C
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-34dBm
FRM5W232HZ
550nm
FRM5W232HZ
frm5w23
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InGaAs apd photodiode
Abstract: EUDYNA FRM5W232HZ
Text: InGaAs-APD/Preamp Receiver FRM5W232HZ FEATURES • InGaAs-APD with 3.3V pre-amplifier • Wide Band: 2.2GHz • Data rate up to 2.7Gb/s • Differential Output • High Sensitivity: -34dBm typ. • 5-pin coaxial package • Operating Case Temperature: -40°C to 85°C
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FRM5W232HZ
-34dBm
550nm
FRM5W232HZ
in4888
InGaAs apd photodiode
EUDYNA
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DBC3
Abstract: No abstract text available
Text: 2nd 3rd Harmonic vs. Pout MAX3509 65MHz 2:1 Pin=34dBmV 70 65 60 dBc 55 dbc2 dbc3 50 45 40 35 30 57 59 61 63 65 Pout dBc 67 69 71
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MAX3509
65MHz
34dBmV
DBC3
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JAN 6418
Abstract: CHA5350-99F
Text: CHA5350-99F 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5350-99F is a four stage monolithic MPA that typically provides an output power of 26.5dBm at 1dB gain compression associated to a high IP3 output of 34dBm. It is designed for a wide range of
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CHA5350-99F
17-24GHz
CHA5350-99F
34dBm.
17-24GHz
34dBm
DSCHA53503018
JAN 6418
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CGY 8 pin
Abstract: 81541
Text: SIEMENS CGY 0918 GaAs MMIC • • • • Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package Power ramp control ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking
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OCR Scan
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35dBm
34dBm
Q62702G0077
577ms
15ity
CGY 8 pin
81541
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