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    33DB Search Results

    33DB Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    54FCT533DB Renesas Electronics Corporation OCTAL D LATCH Visit Renesas Electronics Corporation
    LP2981A-33DBVTG4 Texas Instruments 100-mA ultra-low dropout regulator with shutdown & 0.75% tolerance 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    LP2985-33DBVRE4 Texas Instruments 150mA Low-Noise Low-Dropout Regulator With Shutdown 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    TPS3103K33DBVTG4 Texas Instruments UltraLow Supply Current, Voltage Supervisory Circuits 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
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    33DB Price and Stock

    Texas Instruments TPS3809K33DBVR

    IC SUPERVISOR 1 CHANNEL SOT23-3
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    DigiKey TPS3809K33DBVR Reel 18,000 3,000
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    Bristol Electronics TPS3809K33DBVR 4,087
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    TPS3809K33DBVR 19
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    Chip 1 Exchange TPS3809K33DBVR 6,806
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    Chip-Germany GmbH TPS3809K33DBVR 17
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    Chip1Stop TPS3809K33DBVR Cut Tape 1,446
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    New Advantage Corporation TPS3809K33DBVR 4,236 1
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    Win Source Electronics TPS3809K33DBVR 35,320
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    Texas Instruments LP2985A-33DBVT

    IC REG LINEAR 3.3V 150MA SOT23-5
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    DigiKey LP2985A-33DBVT Reel 17,750 250
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    TME LP2985A-33DBVT 229 1
    • 1 $1.37
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    Win Source Electronics LP2985A-33DBVT 100,005
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    Texas Instruments TPS709A33DBVT

    IC REG LINEAR 3.3V 150MA SOT23-5
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    DigiKey TPS709A33DBVT Digi-Reel 8,110 1
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    TPS709A33DBVT Cut Tape 8,110 1
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    TPS709A33DBVT Reel 7,750 250
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    Texas Instruments TPS7A0233DBVR

    200-MA, NANOPOWER-IQ (25 NA), LO
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    DigiKey TPS7A0233DBVR Reel 3,000 3,000
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    Mouser Electronics TPS7A0233DBVR 6,125
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    Texas Instruments TPS70633DBVT

    IC REG LINEAR 3.3V 150MA SOT23-5
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    DigiKey TPS70633DBVT Digi-Reel 1,879 1
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    TPS70633DBVT Cut Tape 1,879 1
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    TPS70633DBVT Reel 1,750 250
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    Newark TPS70633DBVT Cut Tape 822 1
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    Rochester Electronics TPS70633DBVT 45 1
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    ComSIT USA TPS70633DBVT 245
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    Chip1Stop TPS70633DBVT Cut Tape 390
    • 1 $0.487
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    33DB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EPA240D

    Abstract: No abstract text available
    Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


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    EPA240D 33dBm EPA240D PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC388 KSC388 TV Final Picture IF Amplifier Applications • GPE= 33dB TYP. at f=45MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    KSC388 45MHz KSC388CTA KSC388CYBU KSC388CYTA KSC388YBU KSC388YTA KSC388 PDF

    Untitled

    Abstract: No abstract text available
    Text: LANDatacom Features Discrete Single Port Gigabit Low Profile Typical Common Electrical Characteristics Dielectic Rating 1500VAC Insertion Loss -1.0dB max. -18dB min. -15dB min. Return Loss -12dB min. -10dB min. Cross Talk -35dB min. -42dB min. CCMR -33dB min.


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    1500VAC -18dB -15dB -12dB -10dB -35dB -42dB -33dB 300kHz-100MHz 500kHz-40MHz PDF

    80MHZ-100MHZ

    Abstract: 000-7382-35
    Text: more than you expect Discrete Dual Port Gigabit PoE PDFP-G48 LANDatacom 1 Typical Common Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Insertion Loss -1.0dB max. -18dB min. -14dB min. Return Loss -12dB min. -10dB min. Cross Talk -33dB min.


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    PDFP-G48 350uH 1500VAC -18dB -14dB -12dB -10dB -33dB -30dB 100kHz, 80MHZ-100MHZ 000-7382-35 PDF

    DSSS transceiver

    Abstract: dsss modulator wlan transceiver IC for oscillator 2.4GHZ MAX2620 2.45Ghz oscillator circuit DSSS 2.4ghz amplifier 2.4GHz Linear Power Amplifier MAX2644 data sheet
    Text: WIRELESS, RF, AND CABLE Application Note 586: May 01, 2001 Block Diagram for 2.4GHz IEEE802.11b DSSS WLAN Transceiver Application Short application article show a detailed block diagram for the 802.11b DSSS transceiver. The MAX2242 PA provides 33dBc ACPR at 2.45GHz with +22.5dBm


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    IEEE802 MAX2242 33dBc 45GHz MAX2752 MAX2644 MAX2620. MAX2620 748MHz. com/an586 DSSS transceiver dsss modulator wlan transceiver IC for oscillator 2.4GHZ 2.45Ghz oscillator circuit DSSS 2.4ghz amplifier 2.4GHz Linear Power Amplifier MAX2644 data sheet PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC388 KSC388 TV Final Picture IF Amplifier Applications • GPE= 33dB TYP at f=45MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    KSC388 45MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,


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    RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110 PDF

    TOSHIBA MICROWAVE AMPLIFIER

    Abstract: TMD1013-1-431 TOSHIBA TMD1013-1-431
    Text: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ High Power P1dB=33dBm TYP. „ High Power Added Efficiency ηadd=14%(TYP.) „ High Gain G1dB=25dB(TYP.) „ Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°


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    TMD1013-1-431 33dBm 000pF TOSHIBA MICROWAVE AMPLIFIER TMD1013-1-431 TOSHIBA TMD1013-1-431 PDF

    Untitled

    Abstract: No abstract text available
    Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling


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    MASW-004100-1193 50MHz 26GHz 20GHz 33dBm MASW-004100-1193 PDF

    EMM5329ZW

    Abstract: V23133 marking code V3.V
    Text: EMM5329ZW Single Pole Double Throw Switch 0.1 - 6 GHz Wireless LAN Transmit / Receive Applications FEATURES • • • • High Input P0.1dB: 33dBm Low Insertion Loss: 0.55 dB at 6 GHz GaAs PHEMT technology Small size and low-cost SC-70 / SOT363 package APPLICATIONS


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    EMM5329ZW 33dBm SC-70 OT363 EMM5329ZW V23133 marking code V3.V PDF

    RFMA7185

    Abstract: No abstract text available
    Text: RFMA7185 -2W 7.10 – 8.50 GHz Power Amplifier MMIC UPDATED 01/14/05 FEATURES • • • • 7.10– 8.50GHz Operating Frequency Range 33dBm Output Power at 1dB Compression 30.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @ each tone Pout 22dBm


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    RFMA7185 50GHz 33dBm -45dBc 22dBm RFMA7185 PDF

    EMP103B

    Abstract: No abstract text available
    Text: EMP103B DATA SHEET 6.4 – 8.0 GHz Power Amplifier MMIC ISSUED DATE: 02-24-04 FEATURES • • • 6.4 – 8.0 GHz Bandwidth 33dBm Output Power at 1dB Compression 14 dB Typical Power Gain APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C


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    EMP103B 33dBm 3000x2200microns 950mA EMP103B PDF

    RF5110

    Abstract: No abstract text available
    Text: RF5111 DRAFT DRAFT 3V DCS POWER AMPLIFIER „ „ „ „ „ „ „ VCC2 2f0 13 VAT EN 1 12 RF OUT 27dB Gain with Analog Gain Control RF IN 2 11 RF OUT 50% Efficiency GND1 3 10 RF OUT 1700MHz to 1950MHz Operation VCC1 4 9 NC +33dBm Output Power at 3.5V Supports DCS1800 and


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    16-Pin, RF5111 33dBm 1700MHz 1950MHz DCS1800 PCS1900 DCS1800 DCS1900 RF5110 PDF

    VD F1 SMD

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


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    MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) VD F1 SMD PDF

    SMD GP 113

    Abstract: MGF0921A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm


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    MGF0921A MGF0921A 33dBm 17dBm 500mA 50pcs) SMD GP 113 PDF

    ZMSC-4-2

    Abstract: No abstract text available
    Text: Coaxial Power Splitter/Combiner 4 Way-0° 50Ω 0.002 to 20 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter ZMSC-4-2 • high isolation, 33dB typ. • rugged, shielded case


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    M96470 ZMSC-4-2 PDF

    ED-1402

    Abstract: No abstract text available
    Text: +12 to +33dBm Limiter 50Ω Broadband VLM-63-2W+ 30 to 6000 MHz The Big Deal • Protection against up to 2.5 W of unwanted input signals • Wide frequency range, 30 MHz-6 GHz • Very fast recovery time, 5 nsec typ. CASE STYLE: FF704 Product Overview The VLM-63-2W+ reacts almost instantaneously to protect sensitive devices from power surges and other unwanted signals


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    33dBm VLM-63-2W+ FF704 M130449 ED-14025/2 ED-1402 PDF

    transistor F45

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC2216 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS Package: TO-92 * High Gain:Gpe=33dB TYP. (f=45 MHz) * Good Linearity of HFE ABSOLUTE MAXIMUM RATINGS at Tamb=250C


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    2SC2216 100uA 30MHz 30MHz 45MHz transistor F45 PDF

    27dBm 5GHz

    Abstract: No abstract text available
    Text: Crystek POCKET Passive Doubler Part Number: CPPD-0.85-2 Input Freq. Range 0.85-2.0 GHz y ies c w n e e N qu r Ser e lie r F tip l u M Features: Input Drive Level: +10dBm to +20dBm Conversion Loss: 15dB typical Isolation Fo, 3Fo, 4Fo : 33dB typical Small In-Line SMA Package


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    10dBm 20dBm 27dBm 17dBm 15dBm 15dBm) 27dBm 5GHz PDF

    2SC2216

    Abstract: 2SC2717
    Text: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    2SC2216 2SC2717 2SC2216, 45MHz) SC-43 PDF

    F0022

    Abstract: No abstract text available
    Text: InNET TECHNOLOGIES technologies! w F0022 w Electrical ELECTRICAL SPECIFICATIONS • 25°C : REV. 03 TRANSMIT RECEIVE 1.0dB MAX. 1.0dB MAX. 20MHz 7dB MIN. 5dB MIN. 25MHz 18dB MIN. 1 1dB MIN. 30MHz 40MHz 27dB MIN. 33dB MIN. 16dB MIN. 26dB MIN. INSERTION LOSS: (1 TO 10MHz)


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    F0022 10MHz) 20MHz 25MHz 30MHz 40MHz 10MHz 100MHz F0022 PDF

    Untitled

    Abstract: No abstract text available
    Text: InNET TECHNOLOGIES te c lln o ^ ^ e j j 3 t F0012 Electrical (REV. 01 E L E C T R IC A L S P E C IF IC A T IO N S INSERTION LOSS: (1 TO 10MHz) TRANSMIT RECEIVE 1.0dB MAX. 1-OdB MAX. 7dB MIN. 18dB MIN. 27dB MIN. 33dB MIN. 5dB MIN. 11 dB MIN. 16dB MIN. 26dB MIN.


    OCR Scan
    F0012 10MHz) 20MHz 25MHz 30MHz 40MHz 10MHz 100MHz PDF

    OK304

    Abstract: 2sc2216
    Text: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    2SC2216 2SC2717 2SC2216, 45MHz) 2SC2717 SC-43 OK304 PDF

    2SC382

    Abstract: W2W89 882s 12W55 transistor 2sc382
    Text: 2 s c 382 SILICON NPN PLANAR TRANSISTOR L 2j O t h ; pif i, o TV let, 2nd. Picture IP Amplifier Applications : • Gpe = 33dB Typ. (f = 45MHz) • I1^(bIAO Ci|fft • Excellent forward AGC Characteristic MAXIMUM RATINGS CHARACTERISTIC 3 u $ * • X í y ^


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    2sc382 45MHz) 058MAX. 45MHz 2SC382 W2W89 882s 12W55 transistor 2sc382 PDF