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    3300 TRANSISTOR Search Results

    3300 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3300 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FD 1200

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 400 R 33 KF2 Datenblatt data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Tj = 25°C Tj = -25°C VCES 3300 3300 V Kollektor-Dauergleichstrom


    Original     		PDF

    fd transistor

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 400 R 33 KF2 Datenblatt data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Tj = 25°C Tj = -25°C VCES 3300 3300 V Kollektor-Dauergleichstrom


    Original     		PDF

    micronas ddp 3310

    Abstract: VPC3210A 3211B VPC3211B PLCC68 320X 32XX 3310B
    Text: PRELIMINARY DATA SHEET MICRONAS INTERMETALL Edition June 19, 1996 6251-421-1PD DDP 3300 A Single-Chip Display and Deflection Processor DDP 3300 A PRELIMINARY DATA SHEET Contents Page Section Title 4 4 5 6 6 6 6 1. 1.1. 1.2. 1.3. 1.3.1. 1.3.2. 1.3.3. Introduction


    Original     		PDF 6251-421-1PD micronas ddp 3310 VPC3210A 3211B VPC3211B PLCC68 320X 32XX 3310B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V


    Original     		PDF CM400HG-66H min200V, 800A/Â

    MITSUBISHI CM400HG-66H

    Abstract: D 400 F 6 F BIPOLAR TRANSISTOR HVIGBT 525k CM400HG-66H hvigbt diode 3g124
    Text: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V


    Original     		PDF CM400HG-66H MITSUBISHI CM400HG-66H D 400 F 6 F BIPOLAR TRANSISTOR HVIGBT 525k CM400HG-66H hvigbt diode 3g124

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HG-66H ● IC . 1200 A ● VCES . 3300 V


    Original     		PDF CM1200HG-66H 400A/Â

    BIPOLAR TRANSISTOR

    Abstract: CM1200HG-66H
    Text: MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HG-66H ● IC . 1200 A ● VCES . 3300 V


    Original     		PDF CM1200HG-66H BIPOLAR TRANSISTOR CM1200HG-66H

    TRANSISTOR SMD 3401

    Abstract: No abstract text available
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P TRANSISTOR SMD 3401

    NPN Transistor TO92 5V 200mA

    Abstract: ZTX658
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Transition Frequency f T TYP. MAX. 50 Output capcitance C obo Switching times t on t off 10 130 3300


    Original     		PDF ZTX658 20MHz 100mA, -20mA 100ms NPN Transistor TO92 5V 200mA ZTX658

    Untitled

    Abstract: No abstract text available
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015F CGH35015F CGH3501

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501

    10UF

    Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28 V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015 CGH35015 CGH3501 35015S

    transistor smd f36

    Abstract: CGH35015 CGH35015F 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Text: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide


    Original     		PDF CGH35015F CGH35015F CGH3501 transistor smd f36 CGH35015 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw

    CGH35015

    Abstract: CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401

    TRANSISTOR SMD 3401

    Abstract: No abstract text available
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P TRANSISTOR SMD 3401

    transistor E 13007

    Abstract: 54-619 msl 9351 s-parameters cree marking information 00457 43251
    Text: PRELIMINARY CGH35015S 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		PDF CGH35015S CGH35015S CGH3501 transistor E 13007 54-619 msl 9351 s-parameters cree marking information 00457 43251

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P

    Tantalum

    Abstract: CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060F CGH35060-TB s-parameter
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 Tantalum CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060-TB s-parameter

    CGH35060

    Abstract: CGH35060F
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 10failure CGH35060

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		PDF NPT35050A 3A001b 750mA, NPT35050A NDS-003 PIMD3

    PIMD3

    Abstract: No abstract text available
    Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power


    Original     		PDF NPT35050A 3A001b 750mA, NDS-003 PIMD3

    VPC3200A

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET DDP 3300 A Single-Chip Display and Deflection Processor Edition June 19,1996 6251-421-1PD ITT INTERMETALL Mbfl2711 OODbüflfl 441 DDP 3300 A PRELIMINARY DATASHEET Contents Page Section Title 4 4 5 6 6 6 6 1. 1.1. 1.2. 1.3. 1.3.1. 1.3.2.


    OCR Scan     		PDF 6251-421-1PD Mbfl2711 4bfi2711 VPC3200A