K6R1008V1D
Abstract: No abstract text available
Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify
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K6R1008V1D
64Kx16
100mA
32-TSOP2-400CF
002MIN
K6R1008V1D
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K6R1004C1D
Abstract: No abstract text available
Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.
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K6R1004C1D
256Kx4
32-SOJ-400
K6R1004C1D
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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K6R4004C1D-JC
Abstract: K6R4004V1D K6R4016V1D-J
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4004C1D-JC
K6R4004V1D
K6R4016V1D-J
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Untitled
Abstract: No abstract text available
Text: K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I PRELIMINARY CMOS SRAM Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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K6R4004C1C-C,
K6R4004C1C-E,
K6R4004C1C-I
160mA
155mA
150mA
190mA
185mA
180mA
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K6R1008V1C-C10
Abstract: No abstract text available
Text: PRELIMINARY P K6R1008V1C-C/C-L, K6R1008V1C-I/C-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Initial release with Preliminary.
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K6R1008V1C-C/C-L,
K6R1008V1C-I/C-P
128Kx8
32-TSOP2-400CF
002MIN
K6R1008V1C-C10
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K6R4008V1D
Abstract: K6R4016C1D 44-TSOP2
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4008V1D
K6R4016C1D
44-TSOP2
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300mil-SOJ
Abstract: K6R1008C1A K6R1008C1A-C12
Text: PRELIMINARY K6R1008C1A-C, K6R1008C1A-I CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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K6R1008C1A-C,
K6R1008C1A-I
128Kx8
12/15/17/20ns
200/190/180/170mA
170/165/165/160mA
32-TSOP2-400CF
047MAX
002MIN
300mil-SOJ
K6R1008C1A
K6R1008C1A-C12
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K6R4016V1D-J
Abstract: No abstract text available
Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001
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K6R4004C1D
115mA
100mA
32-SOJ-400
K6R4016V1D-J
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Preliminary PRELIMINARY K6R1008C1D-C/1D-I/D-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Initial release with Preliminary.
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K6R1008C1D-C/1D-I/D-P
128Kx8
32-TSOP2-400CF
002MIN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Preliminary CMOS SRAM K6R4004C1C-C, K6R4004C1C-I Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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K6R4004C1C-C,
K6R4004C1C-I
160mA
155mA
150mA
190mA
185mA
180mA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Preliminary CMOS SRAM KM644002C, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.
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KM644002C,
KM644002CI
32-SOJ-400
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K6R1008v1c-12
Abstract: No abstract text available
Text: PRELIMINARY PRELIMINARY K6R1008V1C-C/C-L, K6R1008V1C-I/C-P CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Initial release with Preliminary.
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K6R1008V1C-C/C-L,
K6R1008V1C-I/C-P
128Kx8
32-TSOP2-400CF
002MIN
K6R1008v1c-12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY K6R1004V1C-C CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(3.3V Operating). Preliminary CCPCCCRCELIMINARY Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 5th. 1998 Preliminary
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K6R1004V1C-C
256Kx4
32-SOJ-400
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KM681001-25
Abstract: KM681001-20 KM681001-35 tl2245 KM681001
Text: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) Operating KM681001-20 : 170 mA(Max.) KM681001-25:150 mA(Max.)
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KM681001
KM681001-20
KM681001-25
KM681001
KM681001P:
32-DIP-400
32-SQJ-400
576-bit
KM681001-20
KM681001-35
tl2245
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cm 324
Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
Text: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)
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KM681002A
KM681002A-12
KM681002A-15
KM681002A-17
KM681002A-20
KM681002AJ
32-SOJ-400
KM681002AT
32-TSOP2-400F
KM681002A
cm 324
KM681002A-12
KM681002A-15
KM681002A-20
74114
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM KM64V1003A 25 6K x 4 Bit With UE High-Speed CM OS Static (3 .3 V Operating) RAM GENERAL DESCRIPTION FEATURES The KM64V1003A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words . Fast Access Tim e 12,15,17,20 ns(Max.)
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KM64V1003A
KM64V1003A-12
KM64V1003A-15
KM64V1003A-17
KM64V1003A-20
KM64V1003AJ
32-SQJ-400
KM64V1003A
576-bit
00515S3
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KM681002
Abstract: No abstract text available
Text: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)
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KM681002
KM681002-15:
170mA
KM681002
160mA
150mA
KM681002J
32-SOJ-400
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KM64BV4002J-12
Abstract: KM64BV4002J-15 KM64BV4002J-20
Text: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES • Fast Access Time : 12 ,1 5 , 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM 64B V4002J-12: 155mA(Max.)
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KM64BV4002
KM64BV4002J-12
155mA
KM64BV4002J-15
150mA
KM64BV4002J-20
145mA
KM64BV4002J
32-SOJ
KM64BV4002
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Untitled
Abstract: No abstract text available
Text: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran
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KM681002B/BL,
KM681002BI/BLI
KM681002B/BL
KM681002B/BL-
KM681002B/BLJ
32-SOJ-4QO
KM681002B/BLSJ
32-SOJ-300
KM681002B/BLT:
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452 S77
Abstract: KM64B4002J-10 KM64B4002J-12 KM64B4002J-15 CV448 20/452 S77
Text: PRELIMINARY KM64B4002 BiCMOS SRAM 1M x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 0,1 2,15 ns(M ax.) • Low Pow er Dissipation Standby (TT L) : 6 0 m A(M ax.) (C M O S ): 3 0 m A(M ax.) O perating K M 6 4 B 40 0 2 J-1 0 : 190 m A(Max.)
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KM64B4002
KM64B4002J-10
KM64B4002J-12
KM64B4002J-15
KM64B4002J:
32-SOJ-4QO
KM64B4002
304-bit
452 S77
KM64B4002J-10
KM64B4002J-12
KM64B4002J-15
CV448
20/452 S77
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KM68V1002A
Abstract: No abstract text available
Text: ADVANCED INFORMATION KM68V1002A CMOS SRAM 131,072 WORDx8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17,20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM68V1002A-12 : 95mA (max.)
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KM68V1002A
KM68V1002A-12
KM68V1002A-15
KM68V1002A-17
KM68V1002A-20
KM681V002AJ
32-SOJ-400
KM68V1002AT
32-TSOP
-400F
KM68V1002A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM KM681002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (T T l) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)
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KM681002A
KM681002A-12
KM681002A-15
KM681002A-17
KM681002A-20
KM681002AJ
32-SOJ-4Ã
KM681002AT:
32-TSOP2-4QOF
KM681002A
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Untitled
Abstract: No abstract text available
Text: KM64V1003A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns(Max ) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12: 160mA(Max.)
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KM64V1003A
KM64V1003A-12:
160mA
KM64V1003A-15
KM64V1003A-17
KM64V1003A-20
KM64V1003AJ
32-SOJ-400
KM64V1003AT:
32-TSOP2-4QOF
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