S0014
Abstract: TME 57 256KX16 A1526
Text: ^EDI EDI8F16258C afCTOONC OESGNS. NC '256Kxie SRAM Module 256KX16 Static RAM CMOS Module Features 256Kx16 bit CMOS Static Random Access Memory • Access Times 70,85, and 100ns • Data Retention Function EDI8F16258LP • TTL Compatible Inputs and Outputs
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EDI8F16258C
56Kx1S
256Kx16
100ns
EDI8F16258LP)
EDI8F16258C
4096K
128Kx8
S0014
TME 57
A1526
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Untitled
Abstract: No abstract text available
Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic two megabit
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
EDI8M8257LP)
323011M
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SDP3B
Abstract: mj03 MJ-03 PCMCIA FLASH CARD 10MB MN 5198 K SDP3BI 1431a aeg tt
Text: W D l ED I7P1 6x x x A T A /C F A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220M B • EDI's ATA Flash Memory PC Card series offers a full Compact Flash - 2MB to 24M B range of densities and packaging options. Ideal for solid
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EDI7P16xxxATA/CFA
220MB
110MB
III-175MB
EDI7P16xxxA
175MB
EDI7P16xxxCFA00Z
ECOS91Q3
SDP3B
mj03
MJ-03
PCMCIA FLASH CARD 10MB
MN 5198 K
SDP3BI
1431a
aeg tt
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI88130CS Electronic Designs Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory
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EDI88130CS
128Kx8
EDI88130CS
EDI88130LPS,
000200ti
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1025K-1152K
Abstract: 897K-1024K
Text: ^E D I _EDI7F82048C E le c t r o n ic D e s ig n s I n c . High Performance Sixteen Megabit Flash EEPROM ip ìe u ìd ìà ^ y 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module.
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EDI7F82048C
EDI7F82048C
128Kx8
A17-A20
EDI7F82048C120BSC
EDI7F82048C150BSC
EDI7F82048C200BSC
7F82048C
1025K-1152K
897K-1024K
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TME 57
Abstract: No abstract text available
Text: M DI EDI8F82046C 2 MegxB SRAM Module ELECTRONIC DESIGNS N C 2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout I,Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks
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EDI8F82046C
EDI8F82046C
512Kx8
E0I8F82046C
EDI8F82046C20M6C
EDI8F82046C25M6C
EDI8F82046C35M6C
TME 57
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