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    Texas Instruments TMS320F2806NMFS

    32-bit Microcontrollers - MCU C2000™ 32-bit MCU with 100 MHz, 64 KB flash, 12 PWM 100-NFBGA -40 to 125
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMS320F2806NMFS 1,104
    • 1 $21.52
    • 10 $18.45
    • 100 $17.25
    • 1000 $15.26
    • 10000 $15.26
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    Seiko Epson Corporation TG2016SMN 19.2000M-MCGNNM0

    TCXO Oscillators TG2016SMN 19.2000M-MCGNNM0: TCXO 2.8V 3.3V 0.5PPM -40 85C NON O/E 1KTR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TG2016SMN 19.2000M-MCGNNM0 1,018
    • 1 $0.89
    • 10 $0.696
    • 100 $0.648
    • 1000 $0.586
    • 10000 $0.47
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    Texas Instruments TMS320F2806NMFAR

    32-bit Microcontrollers - MCU C2000™ 32-bit MCU with 100 MHz, 64 KB flash, 12 PWM 100-NFBGA -40 to 85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMS320F2806NMFAR 1,000
    • 1 $17.97
    • 10 $14.37
    • 100 $12.43
    • 1000 $11.36
    • 10000 $11.36
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    Seiko Epson Corporation TG2016SMN 38.4000M-MCGNNM0

    TCXO Oscillators TG2016SMN 38.4000M-MCGNNM0: TCXO 2.8V 3.3V 0.5PPM -40 85C NON O/E 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TG2016SMN 38.4000M-MCGNNM0 1,000
    • 1 $0.87
    • 10 $0.717
    • 100 $0.634
    • 1000 $0.544
    • 10000 $0.48
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    Seiko Epson Corporation TG2016SMN 38.4000M-ECGNNM0

    TCXO Oscillators TG2016SMN 38.4000M-ECGNNM0: TCXO 1.8V 0.5PPM -40 85C NON O/E 1K TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TG2016SMN 38.4000M-ECGNNM0 935
    • 1 $0.87
    • 10 $0.778
    • 100 $0.778
    • 1000 $0.66
    • 10000 $0.66
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    320 NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ixys mcc 132 12

    Abstract: No abstract text available
    Text: Date: 08.08.2011 IXYS Data Sheet Issue: 1 Thyristor/Diode Modules M## 320 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 3000 320-30io2 320-30io2 320-30io2 3200 320-32io2 320-32io2 320-32io2 3400 320-34io2 320-34io2 320-34io2 3600 320-36io2 320-36io2 320-36io2


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    PDF 320-30io2 320-32io2 320-34io2 320-36io2 ixys mcc 132 12

    Untitled

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei 880 nm (SFH 320 FA)


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    PDF Q62702-P0961 Q62702-P390 Q62702-P3602 Q62702-P1606

    Q65110A2510

    Abstract: No abstract text available
    Text: 2007-05-10 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED®-Gehäuse Version 1.0 SFH 320, SFH 320 FA SFH 320 SFH 320 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)


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    PDF D-93055 Q65110A2510

    Untitled

    Abstract: No abstract text available
    Text: 2014-06-04 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED ®-Gehäuse Version 1.2 SFH 320, SFH 320 FA SFH 320 SFH 320 FA / FAG Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)


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    PDF D-93055

    Untitled

    Abstract: No abstract text available
    Text: 2014-01-14 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED®-Gehäuse Version 1.1 SFH 320, SFH 320 FA SFH 320 SFH 320 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)


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    PDF D-93055

    Q62702-P0961

    Abstract: Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393
    Text: NPN-Silizium-Fototransistor im SMT TOPLED-Gehäuse Silicon NPN Phototransistor in SMT TOPLED-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei


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    metal rectifier diode skr 300

    Abstract: RECTIFIER DIODE SKN 2700 SKR 870 Semikron SKR diode SKN skn diodes semikron skn 320/02 diode skn 20 semikron skn 320/12 DIN41814
    Text: VRSM VRRM IFRMS maximum values for continuous operation 700 A IFAV (sin. 180; Tcase = 100 °C) 420 A 400 A Rectifier Diodes SKN 320 SKN 400 SKR 320 V 200 400 800 1200 1400 1600 1800 2400 2700 3000 SKN 320/02 SKN 320/04 SKN 320/08 SKN 320/12 SKN 320/14 SKN 320/16


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    PDF Nm/530 DO-200 metal rectifier diode skr 300 RECTIFIER DIODE SKN 2700 SKR 870 Semikron SKR diode SKN skn diodes semikron skn 320/02 diode skn 20 semikron skn 320/12 DIN41814

    P3601

    Abstract: Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P3601 Q62702-P3602 Q62702-P390 Q62702-P393 marking 320 ON
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1150 nm SFH 320 und bei


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    semikron skn 320/02

    Abstract: Semikron SKR 26 /02 Semikron SKR 26 /12 metal rectifier diode skr 300 semikron skn 320/12 high voltage rectifier diode semikron 320/16 semikron skr 320-04 Semikron SKR 40 /12 skn 320/02
    Text: VRSM VRRM IFRMS maximum values for continuous operation 700 A IFAV (sin. 180; Tcase = 100 °C) 420 A 400 A Rectifier Diodes SKN 320 SKN 400 SKR 320 V 200 400 800 1200 1400 1600 1800 2400 2700 3000 SKN 320/02 SKN 320/04 SKN 320/08 SKN 320/12 SKN 320/14 SKN 320/16


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    PDF Nm/530 semikron skn 320/02 Semikron SKR 26 /02 Semikron SKR 26 /12 metal rectifier diode skr 300 semikron skn 320/12 high voltage rectifier diode semikron 320/16 semikron skr 320-04 Semikron SKR 40 /12 skn 320/02

    Q65110A2510

    Abstract: Q65110A2475
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


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    foto transistor

    Abstract: phototransistor 650 nm P1606 sfh 97 Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P390 Q62702-P393
    Text: SFH 320 SFH 320 FA SFH 320 SFH 320 FA fplf6724 fpl06724 NPN-Silizium-Fototransistor im  SMT TOPLED -Gehäuse Silicon NPN Phototransistor in  SMT TOPLED -Package Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale


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    PDF fplf6724 fpl06724 IPCE/IPCE25o foto transistor phototransistor 650 nm P1606 sfh 97 Q62702-P0961 Q62702-P0988 Q62702-P1606 Q62702-P1607 Q62702-P390 Q62702-P393

    Q65110A2510

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


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    Untitled

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT TOPLED -Gehäuse Silicon NPN Phototransistor in SMT TOPLED®-Package Lead Pb Free Product - RoHS Compliant SFH 320 SFH 320 FA SFH 320 SFH 320 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


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    IRK 92

    Abstract: irk 60 IRKC
    Text: IRK * 320 Series Power Module 320 Amp IRKD IRKC IRKJ IRKE 1 1 1 2 2 2 2 3 3 3 1 Case Style :DOUBLE TOP MAXIMUM RATINGS (Tj = 25 OC unless stated otherwise) * Insert "D" "C" "J" or "E" for circuit configuration Symbol IRK(*) 320-04 Repetitive Peak Reverse Voltage


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    PDF 100OC I2000 150OC IRK 92 irk 60 IRKC

    C956

    Abstract: E717-21 C956 hamamatsu solar converter dc to dc diagram T106-10-6 E717 E678-11A R7154 6dy5 e717-63
    Text: PHOTOMULTIPLIER TUBE R7154 High Sensitivity Solar Blind Photocathode 160 to 320 nm 28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES Spectral Response . 160 to 320 nm Cathode Sensitivity Radiant at 254 nm . 62mA/W Typ.


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    PDF R7154 62mA/W 05A/W TPMSF0073 S-164-40 TPMS1036E01 C956 E717-21 C956 hamamatsu solar converter dc to dc diagram T106-10-6 E717 E678-11A R7154 6dy5 e717-63

    Hamamatsu Photomultiplier Tube C6270

    Abstract: No abstract text available
    Text: PHOTOMULTIPLIER TUBE R7154 High Sensitivity Solar Blind Photocathode 160 nm to 320 nm 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type FEATURES ●Spectral Response . 160 nm to 320 nm ●Cathode Sensitivity Radiant at 254 nm . 62 mA/W Typ.


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    PDF R7154 SE-171-41 TPMS1036E03 Hamamatsu Photomultiplier Tube C6270

    diode skn 170 semikron

    Abstract: metal rectifier diode skr 130 SKN320 Semikron SKR 20 SKR 870 I18N metal rectifier diode skr 300 SKN 170 DIN41814 RECTIFIER DIODE SKN 2700
    Text: 5EMIKR0N Vrsm Vrrm Ifhms maximum values for continuous operation 700 A IfaV (sin. 180; Tease — 100 C) 420 A V 400 A $ $ _ 200 SKN 320/02 SKR 320/02 400 SKN 320/04 800 SKN 320/08 SKR 320/04 SKR 320/08 - 1200 1400 SKN 320/12 SKN 320/14 SKR 320/12 - 1600


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    PDF 813bb71 00Db325 B8-27 SKN320 SKN450 DO-200 diode skn 170 semikron metal rectifier diode skr 130 Semikron SKR 20 SKR 870 I18N metal rectifier diode skr 300 SKN 170 DIN41814 RECTIFIER DIODE SKN 2700

    SKN 170

    Abstract: No abstract text available
    Text: SKN 320/SKR 320 FRMS — 7 0 0 * i SKN 320/04 SKR 320/04* 400 V V rsm 400 V V rrm I fav SKN 320/08 SKR 320/08* I fsm 1400 V 1600 V 800 V 1200 V 1400 V 1600 V 420 A Tcose = 125°C , sin. 180°el 320 A 700 A K 0,55 K 0,55 F K 0,1 F (sin. 180 °el) 195 A


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    Untitled

    Abstract: No abstract text available
    Text: Selection Guide Spectral Response Range nm Features Major Applications Type No. Listed Page I I I I I I 200 400 600 800 1000 1200 Si Photodiodes 1100 190 1000 190 320 1100 730 320 1100 320 UV to IR range, fo r pre cisio n p h o to m e try U V to visib le ra nge w ith


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    PDF S1087-01

    TLS320

    Abstract: tlsr Telefunken LED
    Text: TELEFUNKEN ELECTRONIC 17E D • ß^EOO^b ÜDO^Obfl TLS.320. TTlOJipyiMKiKlelectronic T - M- l- S 3 Creative Technologies Symbol LED's — 0 3 m m O in tinted top diffused package Red TLSR 320. GaAsP on GaAs TLSO 320. GaAsP on GaP Yellow T LSY320. GaAsP on GaP


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    PDF LSY320. Q0S073 00DS07M TLS320 tlsr Telefunken LED

    ir remote power meter

    Abstract: spectrophotometer G1746
    Text: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry


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    PDF S1336/S S1226/S 1227ngth S2381, S2382 S5139, S6045 S5343, S5344 S5345 ir remote power meter spectrophotometer G1746

    E17A

    Abstract: SKR 870 diode skn 170 semikron semikron skn 320/02 Semikron SKR320 skn diodes B832 DIN41814 semikron skr 100 DO-200
    Text: S1E D • B13fc.fc.71 0003670 533 « S E K G SEMIKRDN SENIKRON INC V rsm Ifrms maximum values for continuous operation V rrm 700 A SKN 320 SKR 320 SKN 400_ IfaV (sin. 180; Tease = 100 °C) 420 A V 200 400 800 1200 1600 1800 2400 2700 3000 SKR 320/02


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    PDF fll3bb71 B8-33 T-01-23 M24x1 DO-200 E17A SKR 870 diode skn 170 semikron semikron skn 320/02 Semikron SKR320 skn diodes B832 DIN41814 semikron skr 100

    S5052

    Abstract: S5673
    Text: Si PIN Photodiodes 3 Dimensional Spectral Response Range Peak Sensitivity Wavelength Area X Xp (mm) (mm2) (nm) (nm) 320 to 1000 800 0.46 (>3.0 7.0 320 to 1060 920 0.53 960 0.56 920 0.65 Active Area Effective Active Type No. Outline Package (P.52) Size S5052


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    PDF S5052 S5573 S6977-01 S6036 S6036-01 S6436 S6801 S6801-01 S6968 S5673