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    32 ELEMENTS LINEAR AVALANCHE PHOTODIODE ARRAY Search Results

    32 ELEMENTS LINEAR AVALANCHE PHOTODIODE ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS3E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    32 ELEMENTS LINEAR AVALANCHE PHOTODIODE ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    Light Detector laser

    Abstract: short distance measurement ir infrared diode
    Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that


    Original     		PDF KOTH0001E15 Light Detector laser short distance measurement ir infrared diode

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


    Original     		PDF

    laser range finder schematics

    Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
    Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series


    Original     		PDF

    S13081

    Abstract: APD Arrays
    Text: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits


    Original     		PDF org/abs/1003 6071v2 S13081 APD Arrays

    Untitled

    Abstract: No abstract text available
    Text: 2007 Vol.1 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / 16 models with different spectral response, resolution, sensitivity, etc. Select a model that fits your application 4 MPPC Multi-Pixel Photon Counter 8 10 Gbps ROSA


    Original     		PDF

    transistor c1417

    Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
    Text: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components


    Original     		PDF 980nm) 100ppb transistor c1417 TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    C9750

    Abstract: C10990 S11059-78HT S11154-01CT S10604
    Text: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS


    Original     		PDF C10988MA C10627 D-82211 DE128228814 C9750 C10990 S11059-78HT S11154-01CT S10604

    Sensors PSD

    Abstract: No abstract text available
    Text: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches


    Original     		PDF 16-element C9004) KACCC0426EB Sensors PSD

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


    Original     		PDF

    S11108

    Abstract: C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar
    Text: NEWS 02 2009 LASER PRODUCTS PAGE 08 Gas detection: New Quantum Cascade Infrared Lasers SOLID STATE PRODUCTS PAGE 18 Infrared LED L10822, L10822-01, L10823, L10823-01 ELECTRON TUBE PRODUCTS PAGE 37 Flat panel PMT assemblies H10966A-100/H10966B-100 SYSTEMS PRODUCTS


    Original     		PDF L10822, L10822-01, L10823, L10823-01 H10966A-100/H10966B-100 C11079-01 S11108 C11208-01 C8841 H10570 Hamamatsu Photonics S11108 External Quantum Efficiency solar

    Si photodiode

    Abstract: No abstract text available
    Text: Si photodiodes CHAPTER 02 1 Si photodiodes 1-1 Operating principle 1-2 Equivalent circuit 1-3 Current vs. voltage characteristics 1-4 Linearity 1-5 Spectral response 1-6 Noise characteristics 1-7 Sensitivity uniformity 1-8 Response speed 1-9 Connection to an op amp


    Original     		PDF KPSDC0088EA KPSDC0089EA Si photodiode

    2N2369 Spice

    Abstract: HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 2N2369 avalanche HP1120A nanosecond pulse stretcher tektronix scope tip jack nanosecond pulse generator Avalanche Transistor Circuits for Generating
    Text: Application Note 79 September 1999 30 Nanosecond Settling Time Measurement for a Precision Wideband Amplifier Quantifying Prompt Certainty Jim Williams Introduction Instrumentation, waveform generation, data acquisition, feedback control systems and other application areas


    Original     		PDF AN79-31 AN79-32 an79f 2N2369 Spice HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 2N2369 avalanche HP1120A nanosecond pulse stretcher tektronix scope tip jack nanosecond pulse generator Avalanche Transistor Circuits for Generating

    MPPC 001 ci

    Abstract: china nobel tv diagram
    Text: NEWS 02 2013 100 90 70 Relative light ou tput % 80 60 50 40 30 20 10 300 400 600 500 h (nm) gt en el av W Cover Story PAGE 2 Hamamatsu Photonics K.K. celebrates 60 years of excellence in Photonics OPTO-SEMICONDUCTOR PRODUCTS PAGE 15 New type of Multi-Pixel Photon


    Original     		PDF

    500/250/arc xenon flash lamps

    Abstract: No abstract text available
    Text: Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K. Development and production centers for light sensors, light sources, and application-specific products utilizing light to support a wide range of needs in medical diagnosis/treatment, chemical analysis,


    Original     		PDF OTH0016E06 500/250/arc xenon flash lamps

    500mW 808nm infrared laser diode driver circuit

    Abstract: LM358 laser driver SLD323 blue CD laser pickup assembly 2SK405 equivalent 808nm 1W laser diode laser Semicondutor fiber optic Laser diode lm358 lm358 laser current driver DVD optical pick-up assembly
    Text: LASER DI O D E G SONY SEMICONDUCTOR ation U I D E Notes • Responsibility for quality assurance, defect warranties and other items relating to individual transactions shall conform to these sales contracts and other adjunct contracts concluded between the Sony Sales Department or Sony agents and customers.


    Original     		PDF than-60dB. 500mW 808nm infrared laser diode driver circuit LM358 laser driver SLD323 blue CD laser pickup assembly 2SK405 equivalent 808nm 1W laser diode laser Semicondutor fiber optic Laser diode lm358 lm358 laser current driver DVD optical pick-up assembly

    pin diagram for IC cd 1619 fm receiver

    Abstract: ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555 NEC plasma tv schematic diagram Digital Panel Meter PM 428 555 solar wind hybrid charge controller CLOVER-2000
    Text: Index Editor’s Note: Except for commonly used phrases and abbreviations, topics are indexed by their noun names. Many topics are also cross-indexed. The letters “ff” after a page number indicate coverage of the indexed topic on succeeding pages. A separate Projects index follows the main index.


    Original     		PDF

    C30985E Photodiode Array linear

    Abstract: C30985E 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element
    Text: E G & G/CANADA/OPTOELEK I t C i l IO D • B030bl0 OOODIST SGT * C A N A Photodiode C30985E DATA SHEET Optics 25-Element Silicon Avalanche Photodiode Linear Array for Detection of 900 to 1060 nm Radiation High Quantum Efficiency — 85% typical at 900 nm 18% typical at 1060 nm


    OCR Scan     		PDF B030bl0 C30985E 25-Element L-1117 C30985E 34-pin ED-0006/09/87 C30985E Photodiode Array linear 32 Elements linear Avalanche Photodiode Array rca 711 C30985 Photodiode Array 32 element 30-element L1117 l1117 g linear array photodiode element

    l1117 1.2

    Abstract: No abstract text available
    Text: E G & G/ CANA DA/ OPTOELEK I t C i l 10 D • 3D3DblO OOODIST SÛT « C A N A Electro Optics Photodiode C30985E DATA SHEET ^sKjg 25-Element Silicon Avalanche Photodiode Linear Array for Detection of 900 to 1060 nm Radiation High Quantum Efficiency — 85% typical at 900 nm


    OCR Scan     		PDF C30985E 25-Element L-1117 C30985E ED-0006/09/87 l1117 1.2

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    TRANSISTOR ED203

    Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
    Text: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the


    OCR Scan     		PDF 1N2175 TRANSISTOR ED203 FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa

    TIL702

    Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
    Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or


    OCR Scan     		PDF LCC4230-D EPN4050 TIL702 TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6