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    30N60B Price and Stock

    IXYS Corporation IXXQ30N60B3M

    IGBT
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    DigiKey IXXQ30N60B3M Tube 298 300
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    Mouser Electronics IXXQ30N60B3M
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    TTI IXXQ30N60B3M Tube 300
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    TME IXXQ30N60B3M 1
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    IXYS Corporation IXST30N60B

    IGBT PT 600V 55A TO268AA
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    IXYS Corporation IXGH30N60B

    IGBT 600V 60A 200W TO247AD
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    IXYS Corporation IXGP30N60B2

    IGBT 600V 70A 190W TO220
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    DigiKey IXGP30N60B2 Tube 50
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    IXYS Corporation IXGH30N60B2

    IGBT 600V 70A 190W TO247
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    Bristol Electronics IXGH30N60B2 30
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    30N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30n60b

    Abstract: 30N60 30N60C ic 931
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931

    30n60

    Abstract: 30N60B2
    Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2 IC110 O-220 30n60 30N60B2

    30N60B2

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2 IC110 O-268 30N60B2

    30n60c

    Abstract: No abstract text available
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 30N60B 30N60C O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 IC110

    Untitled

    Abstract: No abstract text available
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 30N60B 30N60C O-268

    30n60b

    Abstract: 30n60 TO-247AA 15a020
    Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		PDF 30N60BU1 O-268 IC110 O-247 728B1 30n60b 30n60 TO-247AA 15a020

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous


    Original     		PDF 30N60BU1 O-268 IC110 30N60BU1

    30N60B2D1

    Abstract: ixgh30n60b2d1
    Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 IC110 O-247 O-268 728B1 123B1 065B1 ixgh30n60b2d1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		PDF 30N60BD1 30N60BD1 O-247 O-268 O-268

    30N60B

    Abstract: 30N60C
    Text: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B 30N60C O-247 O-268 30N60C

    4013V

    Abstract: Siemens DIODE E 1220 30N60B2D1
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 30N60B2 IC110 O-220

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 30N60B2 IC110 O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 IC110 O-247 728B1 123B1 728B1 065B1

    30N60BD1

    Abstract: TO-264 Jedec package outline
    Text: High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Short Circuit SOA Capability Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 55 A


    Original     		PDF 30N60BD1 30N60BD1 TO-264 Jedec package outline

    30N60B2D1

    Abstract: IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A
    Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 IC110 O-247 728B1 123B1 728B1 065B1 IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A

    30n60

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		PDF 30N60BD1 30N60BD1 O-247AD O-268 O-264 30n60

    30N60BD1

    Abstract: ICP-F50
    Text: HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 30N60BD1 O-268 O-247 ICP-F50

    1XYS

    Abstract: No abstract text available
    Text: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il


    OCR Scan     		PDF 30N60B 30N60BS 13/10Nm/lb O-247 1XYS

    Untitled

    Abstract: No abstract text available
    Text: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 30N60BD1 O-268 O-247

    30N60

    Abstract: No abstract text available
    Text: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode 30N60BU1 30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO


    OCR Scan     		PDF IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) IXGH3QN60BU1 IXGH30N6QBU1S 30N60

    30N60BD

    Abstract: No abstract text available
    Text: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C


    OCR Scan     		PDF 30N60BD1 30N60BD1 150UC O-268 O-247 15BSC~ 30N60BD

    30N60BS

    Abstract: No abstract text available
    Text: HiPerFAST IGBT VCES IXGH 30N60B IXGH 30N60BS ^C25 VCE sat = 600 V = 60 A = 1.8V = 130 ns P relim in ary data Symbol Test Conditions V CES T j = 25°C to 150°C Maximum Ratings 600 V vCGR T j = 25°C to 150“C; RGE = 1 MD 600 V v GES vGEM Continuous ±20


    OCR Scan     		PDF 30N60B 30N60BS O-247 30N60BS) 30N60BS