IKW40N120H3
Abstract: IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3
Text: Discrete IGBT Selection Tree YES IGBT NO Single IGBT IGBT + Anti-Parallel Diode Soft Hard Diode Commutation Frequency Range 2 – 20 kHz TRENCHSTOP 20 – 100 kHz HighSpeed 2 – 20 kHz TRENCHSTOP™ Duopack 8 – 60 kHz RC series (monolythic) 2 – 20 kHz
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IGpccN60H3
IGpccN120H2
IGpccN120H3
IGpccN60T.
IGpccN100T
IGpccT120.
IGpccN120
IHpccN60T.
IHpccT60.
IHpccN90T
IKW40N120H3
IKW40N60
30100 transistor
IKW25N120H3
welding inverter
IKW40N120T2
Induction Heating Resonant Inverter
IGW40N120H3
IKW50N60T
IKW40N60H3
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2N3701
Abstract: 2N3700
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage VCEO 80
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ISO/TS16949
2N3700
2N3701
C-120
2N3701
2N3700
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS.
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2N3700
2N3701
C-120
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2N3701
Abstract: 2N3700
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage
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2N3700
2N3701
C-120
2N3701
2N3700
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417900-207CG
Abstract: GV3000 HE-HGV3DN reliance gv3000 software start up 2DB2010 2CA3000 2AX3000 tamagawa 30V2060 reliance 200 HP dc motor MANUAL
Text: GV3000/SE AC Drive Hardware Reference, Installation, and Troubleshooting 30-100 HP @ 230 VAC Version 6.04 Instruction Manual D2-3417-1 The information in this manual is subject to change without notice. Throughout this manual, the following notes are used to alert you to safety considerations:
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GV3000/SE
D2-3417-1
RS-232)
D2-3417-1
417900-207CG
GV3000
HE-HGV3DN
reliance gv3000 software start up
2DB2010
2CA3000
2AX3000
tamagawa
30V2060
reliance 200 HP dc motor MANUAL
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CSC1573
Abstract: CSC1573A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTORS CSC1573 CSC1573A TO-237 BCE High Voltage General Amplifier CSC1573 is Complementary of CSA879 ABSOLUTE MAXIMUM RATINGS Ta=25deg C DESCRIPTION SYMBOL
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ISO/TS16949
CSC1573
CSC1573A
O-237
CSC1573
CSA879
25deg
750mW/Potting
CSC1573A
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Untitled
Abstract: No abstract text available
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS CSC1573 CSC1573A TO-237 BCE High Voltage General Amplifier CSC1573 is Complementary of CSA879
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CSC1573
CSC1573A
O-237
CSC1573
CSA879
25deg
750mW/Potting
750mW
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RUR30100
Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns
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43D2571
110ns)
RUR3070,
RUR3080,
RUR3090,
RUR30100
RUR3080.
RUR3090RUR30100
rur30100 Diode
30a 1000v
RUR3070
RUR3080
RUR3090
VRWM-700V
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 [email protected]/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 [email protected]/l .6@1/.125
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2N3740A
2N3741A
2N4898
2N4899
2N4900
2N5954
2N5955
2N5956
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transistor A7a
Abstract: 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 2N6212A
Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 sus VOLTS Ic (max) AMPS 1*FE@ I c / V ce DEVICE TYPE 2N3740A 60 1 [email protected]/l 2N3740A 60 1 2N3741A 80 2N3741A ^CEO PACKAGE PNP TO-66 VcE(s»t) pr D* WATTS (MHz) .6@1/.125 25 4 [email protected]/l .6@1/.125
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2N3740A
2N3741A
2N4898
2N4899
2N4900
2N5954
2N5955
2N5956
transistor A7a
2N6212A
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2N1716
Abstract: 2N3738 2N3879 2N3767
Text: BIPOLAR bvceo VOLTS / T0-205 T° -5 ^ nr TO-213 (TO-66) ( •- 1m 4t} PEAK ■c AMPS hFE min/max < DEVICE TYPE < o m PACKAGE o NPN MESA POWER TRANSISTORS VCE (sat) max VOLTS ■c @ ' b A A 2N1714* 60 0.75 20 min 0.2/5.0 2.0 0.2/0.02 2N1715* 100 0.75 20 min
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T0-205
2N1714*
2N1715*
2N1716
2N1717*
O-213
2N3584*
2N3585*
2N3766*
2N3767*
2N3738
2N3879
2N3767
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2N4342
Abstract: 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039
Text: 2048352 "DÌÒDÈ fRANSI STÖR 'cÒ INC 840 00137 D r a aaMê 3 sa 000D137 1 -17 r. -DIODE TRANSISTOR CÜ.ÍWC. T PNPTO-66 » i o d e ’ ransis‘ tor co inc 201 689-0400 « T e le x; 139485 • Outside NY & NJ area call T O L L F R E E 800-526-4581 jF A X No. 201-575-5883
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PNPTO-66
000D137
J31QDE
TRdf\J515T0R
30a/a)
2N3740
2N3766
2N3740A
2N3767
2N3741
2N4342
2N4360
2N5033
2N4343
2N4381
2N5474
2N4303
2n6485
2N4382
2N4039
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2N372A
Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
Text: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665
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2N3501
2N3506
2N3507
2N3508
l/10m
2N3509
2N3511
15min
2N3571
2N372A
2N3680
2N3809
T072
2N2979DCSM
2N3734
BFX81
T052
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Untitled
Abstract: No abstract text available
Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE
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0-425V
2N3740
2N3740A
2N3741
2N3741A
2N4898
2N4899
2N4900
2N5344
2N3766
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Untitled
Abstract: No abstract text available
Text: SSDI TRANSISTORS* - THE NPN TRANSISTORS CHIP TYPE INDUSTRY REFERENCE C AMPS hFE b v ceo (VOLTS) ^ 40-450 10-100(50mA,5V) IC’ VCE^ C6E 2N3738,9 0.5 C6T 2N5010-15 0.5 500-lK(CER) 30-180(25mA,10V) 2N5092,5,7 1.0 350-450 10-100(.2A,5V) SPT5502,3 1.0 70.0-800 (CER)
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2N3738
2N5010-15
500-lK
2N5092
SPT5502
SPT6502
2N4300
2N5152
2N4150
2N3996-9
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0103 MA transistor
Abstract: KRA226M 224M 226M KRA221M KRA222M KRA223M KRA224M KRA225M transistor 0103
Text: KEC KOREA ELECTRONICS CO.,LTD. KRA221MKRA226M SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.
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KRA221M-KRA226M
-800mA.
KRA221M
KRA222M
KRA223M
KRA224M
KRA225M
KRA226M
KRA226M
KRA225M
0103 MA transistor
224M
226M
transistor 0103
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30100 transistor
Abstract: RURP3080
Text: < X | % ms h a r r RURP3070, RURP3080, RURP3090, RURP30100 i s „ . . c o n - u c t o . 30A, 700V - 1000V Ultrafast Diodes April 1 9 9 5 Features Package • Ultrafast with Soft Recovery Characteristic *rr < 110ns JE D E C TO-22QAC ANODE CATHODE • +175°C Rated Junction Temperature
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RURP3070,
RURP3080,
RURP3090,
RURP30100
O-22QAC
110ns)
RURP30100
30100 transistor
RURP3080
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Untitled
Abstract: No abstract text available
Text: f il h a r r is u i s , . , . . , , « RHRP3070, RHRP3080, RHRP3090, RHRP30100 , . , 30A, 700V - 1000V Hyperfast Diodes Aprii 1995 Package Features • Hyperfast with Soft R ecovery.<65ns JE DEC TQ -220A C • Operating Tem p eratu
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RHRP3070,
RHRP3080,
RHRP3090,
RHRP30100
-220A
RHRP3090
TA49064)
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PS2002B
Abstract: PS2002 PC715V PS2012 TLP570 PC716V PS2604 PS2654
Text: L E D -D arlin g to n Transistor w ithout Base Connection LED-i*— U > I- > • 7 * I- • f- 7 LU LU LU * If max mA P d\ max (mW) max (V) V cc‘ 1 I0IJ P o2 max max (m A) (mW ) (k V ) IO L DC/AC* To min max 'k Vf max / If 2 c> max typ* (pF) typ* if*)
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PS2002B
PS2012
TLP570
PS2604
PS2654
PS2654ii
PC715V
PC716V
PS2002
TLP570
PC716V
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2N4839
Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i
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2N3789
2N3713
2N3790
2N3714
2N3791
2N3715
2N3792
050-H
O-107
O-126
2N4839
TO114 package
2N5860
2N1724A
2N3716
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TLN119
Abstract: TPS616
Text: TOSHIBA TPS616 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS616 FLOPPY DISK DRIVE VCR POSITION DETECTOR OF HOME ELECTRIC EQUIPMENT OPTO-ELECTRONIC SWITCH • 953.1mm epoxy resin package, black • Light current • H alf value angle : 0 * = ± 3 0 ° (TYP.)
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TPS616
TLN119
TLN119
TPS616
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2N5302 EB
Abstract: 2N1463 2n4271
Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3
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SaD01
2N37S9
2N3790
2N3792
2N4398
2N4399
2N4902
2N4903
2N4904
2N4905
2N5302 EB
2N1463
2n4271
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Untitled
Abstract: No abstract text available
Text: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Ceramic Surface Mount Dual Transistor Dual device in CSM Ceramic Surface Mount Dual device in CSM 50004-017 50004-017 50004-017 50004-017 50004-133 50004-133 50003-021 50003-021 Polarity Package lc_cont
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Untitled
Abstract: No abstract text available
Text: RURG3070\ RURG3080, RURG3090, RURG30100 nn k a f ^ r i s ulJ 30A, 700V - 1 000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery ,<110ns • Operating T em p eratu re. . . . ,+175°C • Reverse Voltage Up To . . . . . ,1000V JEDEC STYLE 2 LEAD TO-247
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RURG3070\
RURG3080,
RURG3090,
RURG30100
110ns
O-247
RURG3070,
RURG3090
TA9904)
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