parabolic antenna
Abstract: antenna for 12GHZ parabolic microwave antenna Types of Radar Antenna long wave RADIO absorber
Text: EMC Components IP-B, IB, IS, IR, IF-P, IF-R Material Radio Wave Absorbers Radio Wave Absorbing Materials A key factor in absorbing unwanted electromagnetic energy efficiently and completely is selecting the most appropriate materials for the application. This selection process must take into account
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12GHz
30MHz
parabolic antenna
antenna for 12GHZ
parabolic microwave antenna
Types of Radar Antenna
long wave RADIO
absorber
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KTB688B
Abstract: KTD718
Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25
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KTB688B
KTD718B.
KTB688B
KTD718
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KTD998
Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃
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KTD998
KTB778.
200x200x2mm
100x100x2mm
300x300x2mm
KTD998
transistor ktD998
KTD998 transistor
KTB778
KTb778 datasheet
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SYM53C896
Abstract: 80960JT 273293 intel desktop board SERVICE MANUAL SMU22R
Text: Intel Integrated RAID Controller Design Kit SMU22R Technical Product Specification January 2000 Order Number: 273293-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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SMU22R
SYM53C896
80960JT
273293
intel desktop board SERVICE MANUAL
SMU22R
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LED21-TEC-PR
Abstract: No abstract text available
Text: LED21-TEC-PR TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.
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LED21-TEC-PR
LED21-TEC-PR
300x300
150-200mA
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LED34-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3.4 µm Model LED34-TEC-PR 24 µW •Light Emitting Diodes LED34-TEC-PR are designed for emitting at a spectral range around 3400 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED34-TEC-PR
LED34-TEC-PR
LED34
LED34
LED34-PR
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LED22
Abstract: No abstract text available
Text: LED22 TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22 has a stable ouput power and a lifetime more then 80000 hours.
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LED22
LED22
300x300
150-200mA
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LED22-TEC
Abstract: No abstract text available
Text: LED22-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics. LED22-TEC has a stable ouput power and a lifetime more then 80000 hours.
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LED22-TEC
LED22-TEC
300x300
150-200mA
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LED20-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 2.05 µm Model LED20-TEC-PR 1.1 mW •Light Emitting Diodes LED20-TEC-PR are designed for emitting at a spectral range around 2050 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on GaSb substrates
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LED20-TEC-PR
LED20-TEC-PR
LED20
LED20
LED20-PR
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Untitled
Abstract: No abstract text available
Text: LED36-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
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LED36-SMD3
LED36-SMD3
300x300
150-200mA
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LED36-TEC
Abstract: No abstract text available
Text: LED36-TEC TECHNICAL DATA Mid-Infrared Light Emitting Diode Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for good electron confinement.
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LED36-TEC
LED36-SMD3
300x300
150-200mA
LED36-TEC
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LED31-TEC
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 3 .1 µ m Model LED31-TEC 14 µW •Light Emitting Diodes LED31-TEC are designed for emitting at a spectral range around 3100 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED31-TEC
LED31-TEC
LED31
LED31
LED31-PR
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Untitled
Abstract: No abstract text available
Text: LED23-SMD3 TECHNICAL DATA Mid-Infrared Light Emitting Diode, SMD Light Emitting Diodes with central wavelength 2.35 µm series are based on heterostructures grown on GaSb substrates. Solid solutions GaInAsSb are used in active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
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LED23-SMD3
LED23-SMD3
300x300
150-200mA
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LED43-TEC-PR
Abstract: No abstract text available
Text: LIGHT EMITTING DIODES 1.6÷ ÷4.6 µm 4.3 µm Model LED43-TEC-PR 10 µW •Light Emitting Diodes LED43-TEC-PR are designed for emitting at a spectral range around 4300 nm. Thermocooler and thermoresistor are mounted inside 9 mm package TO-5. Heterostructures HS are grown on InAs substrates
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LED43-TEC-PR
LED43-TEC-PR
LED43TEC-PR
LED43
LED43
LED43-PR
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omron E3F
Abstract: Y92E-M12PUR4A5M-L E3FZ-T86H-D e3f omron Y92E-M12PUR4S5M-L E3FZ-D87 Y92E-M12PUR4A2M-L Y92E-M12 E3FZ-T81H E3FZ-LS89H
Text: E55E-EN-01+E3FZ-E3FR+Datasheet.FM Seite 1 Dienstag, 15. April 2008 5:17 17 Easy mounting photoelectric sensor in short M18 housing E3FZ/E3FR • Secure-click snap mounting for fast installation • High power LED for enhanced sensing distance • Short housing with less than
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E55E-EN-01
NL-2132
omron E3F
Y92E-M12PUR4A5M-L
E3FZ-T86H-D
e3f omron
Y92E-M12PUR4S5M-L
E3FZ-D87
Y92E-M12PUR4A2M-L
Y92E-M12
E3FZ-T81H
E3FZ-LS89H
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E3X-DA11-N
Abstract: E3X-DA41V E3XDA21N E3X-DA41-N E3X-DA21-N E3X-DA11V torque settings chart 12mm brass E32-L56E e3x-da41
Text: E3X-DA-N Sense the Difference, Make a Difference! Digital Fiber Amplifier Amplifier ● Select from Three Clear Display Methods: Digital incident level Digital percent level LED Bar Display ● Save-wiring Connector ● Auto Power Control Mobile Console ● Remote Tuning and Adjustment
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E3X-DA11-N
E3X-DA41-N
E3X-DA21-N
E3X-DA51-N
E39-K2
E39-K2
E32-T84S
E313-E1-2
0601-2M
E3X-DA11-N
E3X-DA41V
E3XDA21N
E3X-DA41-N
E3X-DA21-N
E3X-DA11V
torque settings chart 12mm brass
E32-L56E
e3x-da41
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113 Product Name : Apex Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain
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698MHz
960MHz,
42MHz
1710MHz
2700Mhz
SPE-12-8-124/A/WY
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113W Product Name : Apex White Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain
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698MHz
960MHz,
42MHz
1710MHz
2700Mhz
SPE-12-8-125/A/WY
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transistor ktd718
Abstract: KTB688 KTD718
Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ
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KTB688
KTD718.
100x100x2mm
transistor ktd718
KTB688
KTD718
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ktd718
Abstract: ktd718 datasheet transistor ktd718 KTB688
Text: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ
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KTD718
KTB688.
100mS
300x300x2mm
200x200x2mm
100x100x2mm
ktd718
ktd718 datasheet
transistor ktd718
KTB688
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al205
Abstract: KTA1036 KTC2016
Text: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING
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KTC2016
KTA1036.
al205
KTA1036
KTC2016
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 d CHARACTERISTIC
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KTB688
KTD718.
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Untitled
Abstract: No abstract text available
Text: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.
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2SC519A
2SC520A
2SC521A
00D7L
2SC519A)
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2SC520A
Abstract: 2SA657A TOSHIBA TV IC regulator 2SA656A 2SC521A 2SA658A tv toshiba 110723 2SC519A AC73
Text: TOSHIBA ~5h {DISCRETE/OPTO} 9097250 T O S H IB A t>6L D I S C R E T E /O PTO SILICO N PN P.TRIPLE D IFFU SED MAS TY PE d F | S O T TESO □ □ 0 7 S E C1 J 07229 2SA656A 2SA657A 2SA658A - 23- 2 / 1 N U U S T K L A L AL'fl. l U A TlUNb Unit in mm 0 85.0 MAX.,
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-130V,
-110V
2SA656A)
2SC519A,
2SC520A
2SC521A.
2SA656A
2SA657A
2SA658A
2SA656A
TOSHIBA TV IC regulator
2SC521A
2SA658A
tv toshiba
110723
2SC519A
AC73
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