Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372C400AK/AS KMM372C400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C400A consists of eighteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-II 300mii
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KMM372C400AK/AS
KMM372C400AK/AS
4Mx72
KMM372C400A
300mii
48pin
168-pin
cycles/64ms
1000mil)
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Untitled
Abstract: No abstract text available
Text: TIEPAL10016P8-3C HIGH-PERFORMANCE ExCL mP A l CIRCUIT D 30 83. D EC E M B E R 1987 • ECL 100K PAL • High-Performance Operation Propagation Delay . . . 3 ns Max JT PACKAG E TOP VIEW I e e • • ■ - 2 2 0 mA Max • Replacement for 100K ECL Logic
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TIEPAL10016P8-3C
24-Pin,
300-Mii
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Untitled
Abstract: No abstract text available
Text: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles
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TM4EP72BPB,
TM4EP72BJB,
72-BIT
TM4EP72CPB,
TM4EP72CJB
SMMS886-AUGUST
TM4EP72BxB
32M-byte,
168-pin,
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Untitled
Abstract: No abstract text available
Text: SN54F30, SN74F30 8-INPUT POSITIVE-NANO GATES D2932, MARCH 1987-R E V ISE D JANUARY 1989 SN 54F30 . . . J PACKAG E SN 74F30 D OR N P A C K A G E Package Options Includa Plastic "Sm all Outline" Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mII
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SN54F30,
SN74F30
D2932,
1987-R
300-mII
54F30
74F30
SN54F30
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Untitled
Abstract: No abstract text available
Text: 74ACT11112 DUAL J-K NEGATIVE-EDGE-TRIGGERED FLIP-FLOP WITH CLEAR AND PRESET _ SCAS064A - D3339. JUNE 1989 - REVISED APRIL 1993 D OR N PACKAGE TOP VIEW Inputs Are TTL-Voltage Compatible Fully Buffered to Offer Maximum Isolation
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74ACT11112
SCAS064A
D3339.
500-mA
300-mii
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2yl6
Abstract: 74ALS38aM
Text: SN74ALS38A, SN54ALS38A QUADRUPLE 2-INPUT POSITIVE-NAND BUFFERS WITH OPEN-COLLECTOR OUTPUTS D2661, A PRIL 1982 - R EV ISED M A Y 1986 • • SN 54ALS38A Package Options Include Plastic '"Small Outline" Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mii
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SN74ALS38A,
SN54ALS38A
D2661,
54ALS38A
74ALS38A
300-mii
74ALS38A
2yl6
74ALS38aM
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LVT16500
Abstract: SN54LVT16500 SN74LVT16500
Text: SN54LVT16500, SN74LVT16500 3.3-V ABT 18-BIT UNIVERSAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SC BS146A-M AY 1 9 9 2 - REVISED MARCH 1994 State-of-the-Art Advanced BiCMOS Technology ABT Design fo r 3.3-V Operation and Low-Static Power Dissipation Members of the Texas Instruments
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SN54LVT16500,
SN74LVT16500
18-BIT
scbs146a-
1992-revised
MIL-STD-883C,
200ns
010D304
LVT16500
SN54LVT16500
SN74LVT16500
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ABT22V10-7A
Abstract: ABT22V10-7D ABT22V10-7N
Text: PROGRAMMABLE LOGIC PRODUCTS A B T 2 2 V 1 0 -7 c o m m e r c ia l A B T 2 2 V 1 0 A /B (MILITARY) Low noise, high drive, metastable immune, PLD Product specification (Commercial) Preliminary specification (Military) April 22, 1994 March 1994 Philips Semiconductors
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ABT22V10-7
ABT22V1OA/B
7110fl2b
ABT22V10
853-0173D
711Dfl2b
ABT22V10-7A
ABT22V10-7D
ABT22V10-7N
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SN74ACT7803
Abstract: SN74ACT7805 SN74ACT7813
Text: SN74ACT7803 512 x 18 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCAS191 - MARCH 1991 - REVISED MARCH 1992 DL PACKAGE TOP VIEW • Member of the Texas Instruments W id e b u s F a m ily • Free-Running Read and Write Clocks Can Be Asynchronous or Coincident U 56
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SN74ACT7803
SCAS191
50-pF
Tbl723
6S8303
SN74ACT7803
SN74ACT7805
SN74ACT7813
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100A484
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A484 IDT101A484 FEATURES: DESCRIPTION: • • • • • • • • The IDT10A484, IDT1OOA484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access
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IDT10A484
IDT100A484
IDT101A484
IDT10A484,
IDT1OOA484
IDT101A484
384bit
IDT100A484,
100A484
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KM44C4004B
Abstract: No abstract text available
Text: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4004B
KM44C4004BS
0034S12
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311 JRC
Abstract: No abstract text available
Text: r z j SGS-THOMSON ^ 7 # » ST62T08 K f lO Ê W IlU K g iM IM lK g ê 8-BIT OTP MCUs • ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range Run, Wait and Stop Modes 4 Interrupt Vectors
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ST62T08
311 JRC
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ICT 18CV8P
Abstract: 18cv8p 18CV8J 18cv8p-25 ict peel 18cv8 ICT Peel 18CV8J 25 PEEL programming 18CV8 PEEL18CV8P-25
Text: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins — 12 possible macrocell configurations
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18CV8
25MHz
configuP-15
PEEL18CV8PI-15
PEEL18CV8J-15
PEEL18CV8JÃ
PEEL18CV8S-15
PEEL18CV8SI-15
PEEL18CV8T-15
PEEL18CV8TI-15
ICT 18CV8P
18cv8p
18CV8J
18cv8p-25
ict peel 18cv8
ICT Peel
18CV8J 25
PEEL programming
PEEL18CV8P-25
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Untitled
Abstract: No abstract text available
Text: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The Hitachi HM 514405C is a CMOS dynamic RAM o rganized 1,048,576 w ords x 4 bits. HM514405C has realized higher density, higher performance and various functions by employing
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HM514405C
576-word
514405C
HM514405C
300-mil
26-pin
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IPDM41027S
Abstract: PDM1027 PDM41027 52HA
Text: PARADIGM 1 M egabit Static RAM 1 M eg x 1-Bit PDM41027S PDM41027L Features Description □ High speed access times Com'l: 20, 25, 35 and 45ns M il: 20, 25, 35, 45, and 55n □ Low power operation - PDM41027S Active: 400mW typ. Standby: 150 mW (typ.) - PDM41027L
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PDM41027S
400mW
PDM41027L
350mW
MIL-STD-883,
PDM41027S
PDM41027
IPDM41027S
PDM1027
52HA
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AMD am3 socket pinout
Abstract: amd socket am3 pinout AMD 140 Socket AM3 amd pinout diagram socket AM3 MR 4710 AMD Socket AM3 amd AM3 PIN LAYOUT MR 4710 IC OO3A MARKING AMD socket AM3 pin diagram
Text: ADV MI CRO PLA/PLE/ARRAYS COM’L SÛE 02S7S2b D 0 0 8 =1 4 4 3 3 B A MDS MIL E T—46— 19-13 Advanced Micro Devices PAL20R8 Family 24-pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay Easy design w ith PALASM softw are
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PAL20R8
24-pin
24-pln
28-pin
PAL20L8,
PAL20R8,
PAL20R6,
PAL20R4)
AMD am3 socket pinout
amd socket am3 pinout
AMD 140 Socket AM3
amd pinout diagram socket AM3
MR 4710
AMD Socket AM3
amd AM3 PIN LAYOUT
MR 4710 IC
OO3A MARKING
AMD socket AM3 pin diagram
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5d-22
Abstract: 74F543 N74F543N 74F373 74F543DB 74F544 N74F543D N74F544D N74F544N 74F543D
Text: Philips Semiconductors FAST Products Product specification Octal registered transceivers 74F543 74F544 74F543, 74F544 Octal registered transceiver, non-inverting 3-State Octal registered transceiver, inverting 93-State) FEATURES FUNCTIONAL DESCRIPTION • Combines74F245 and 74F373 type functions in one chip
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74F543,
74F544
74F543
74F544
93-State)
Combines74F245
74F373
5d-22
N74F543N
74F543DB
N74F543D
N74F544D
N74F544N
74F543D
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74F181
Abstract: N74F181D N74F181N
Text: FAST 74F181 Arithmetic Logic Unit 4-Bit Arithmetic Logic Unit Product Specification FAST Products FEATURES • Provides 16 arithmetic operations: add, subtract, compare, and double; plus 12 other arithmetic operations • Provides all 16 logic operations of two variables: Exclusive-OR,
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74F181
300mii-wide
24-pin
500ns
74F181
N74F181D
N74F181N
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Am29CPL151
Abstract: TCO12 tco122 8006 1d AMD 707 024810
Text: L 2 8 1991 COM’L: 25/33 MIL:-25 Z I Am29CPL151H-25/33 Advanced Micro Devices CMOS 64-Word Field-Programmable Controller FPC DISTINCTIVE CHARACTERISTICS • Implements complex state machines Up to 33-MHz maximum frequency ■ High-speed, low-power CMOS EPROM
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Am29CPL151H-25/33
64-Word
Am29PL141
33-MHz
32-blt
28-pin
Am29CPL151
cp-10h-12/90-0
TCO12
tco122
8006 1d
AMD 707
024810
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SMD 5 PIN PAL1
Abstract: 74F5074 74F74
Text: Philips Semiconductors Product specification BiCMOS versatile PAL device ABT22V1OA/B DESCRIPTION APPLICATIONS The ABT22V10 is a versatile PAL1 device fabricated with the Philips BiCMOS process known as QUBiC. The QUBiC process produces a very high speed device 1 Ons worst case which has excellent noise
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ABT22V1OA/B
ABT22V10
996Feb19
SMD 5 PIN PAL1
74F5074
74F74
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Untitled
Abstract: No abstract text available
Text: KMM372V400AK/AS DRAM MODULE KMM372V400AK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V400A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V400A consists of eighteen
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KMM372V400AK/AS
4Mx72
KMM372V400AK/AS
KMM372V400A
300mii
48pin
168-pin
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74AC11378
Abstract: 74AC11378D 74AC11378N 74ACT11378 74ACT11378D 74ACT11378N
Text: Philips Components— Signetics Document No. 853-1497 ECN No. 00731 Date of Issue October 17,1990 Status Product Specification 74AC/ACT11378 Hex D-type flip-flop with enable, positive-edge trigger ACL Products FEATURES • Output capability: ±2 4 mA • Positive edge-triggered clock
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AC/ACT11378
74AC/ACT11378
74AC/ACT11378
500ft
10MHz
74AC11378
74AC11378D
74AC11378N
74ACT11378
74ACT11378D
74ACT11378N
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Untitled
Abstract: No abstract text available
Text: LH52258A CMOS 32K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read cycles can be
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28-Pin,
300-mil
LH52258A
28soj300
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Untitled
Abstract: No abstract text available
Text: SN54HCT534, SN74HCT534 O C TAL D T Y P E EDGE TRIGGERED FLIP-FLOPS W ITH 3-STATE OUTPUTS D2804, MARCH 1984—REVISED SEPTEMBER 1987 Inputs are TTL-Voltage Compatible High-Current 3-State Inverting Outputs Can Drive Up to 15 LSTTL Loads TOP VIEW Package Options Include Plastic "Small
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SN54HCT534,
SN74HCT534
D2804,
1984--REVISED
300-MII
SN54HCT534
SN54HCT534
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