35606
Abstract: NR041
Text: sa NATL S E M I C O N D { D I S C R E T E } 650 1130 2T 0 . NATL SEMICOND, bsoiiao D0 3 Sb0 h dëT| DISCRETE 28C 35605 r- National Semiconductor D * o fiC NR041(NPN) low-level signal switching transistor features | 1 | package and lead coding • 40mV guaranteed V c e (sat) characteristics at
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LS01130
D03Sb0h
NR041
NR041X
bSG113Q
35606
NR041
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Transistor 3TY
Abstract: CLED400 CLT4140 CLT4150 CLT4160
Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
300jusec.
214E711
70-c/i
Transistor 3TY
CLT4160
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SSP4N60
Abstract: 250M SSP4N55 diode lo2a 120Vn
Text: N-CHANNEL POWER MOSFETS SSP4N60/55 FEATURES • • • • • • • Lower R d s <o n Im proved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSP4N60/55
SSP4N60
SSP4N55
71b4142
120Vn
Voss300V
250M
diode lo2a
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D0233
Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
Text: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFS340/341
IRFS340
IRFS341
71b4142
2ti35ti
D0233
250JUA
250M
Tj-25DC
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04NG
Abstract: DIODE T25 IRFY230 LE17 mosfet 100a 200v
Text: bOE J> m A1331Û7 GDDOSS4 T2S ISMLB " T 3 ° l- U SENELAB PLC 5EMELAB IRFY230 MECHANICAL DATA Dimensions in mm HERMETICALLY SEALED N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS l.F FEATURES • HERMETIC T0220 METAL OR CERAMIC SURFACE MOUNT PACKAGES • SCREENING OPTIONS AVAILABLE
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IRFY230
T0220
T0220M
T0220SM
00A//iS
300/us,
04NG
DIODE T25
IRFY230
LE17
mosfet 100a 200v
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BFW44
Abstract: BFW transistors bfw 10 transistor BFW43
Text: BFW 43 BFW 44 SILICON PLANAR PNP HIGH V O L T A G E AM PLIFIERS T he BFW 43 and B F W 4 4 are silico n p lanar e p ita x ia l PNP tran sisto rs in Jedec T O -1 8 B F W 4 3 and Jedec T O -3 9 (B F W 4 4 ) m etal cases. B o th devices are designed fo r use in a m p lifie rs w here high voltage and high gain are necessary.
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BFW44
BFW44
BFW43)
BFW transistors
bfw 10 transistor
BFW43
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IRFP450
Abstract: IRFP 450 application IRFP451 IRFP450 POWER IRFP452 IRFP453 P452 application IRFP450 IQR 2400 JVM RELAY
Text: -Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 50 75 100 125 T q . C A S E T E M P E R A T U R E °C Fig. 12 — T yp ica l O n-R e sistance V s. D rain C urrent Fig. 13 — M a x im u m D ra in C u rre n t V s. Case Tem perature T E l * 0.5 B V q S S
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IRFP450,
IRFP451,
IRFP452,
IRFP453
IRFP450
IRFP 450 application
IRFP451
IRFP450 POWER
IRFP452
IRFP453
P452
application IRFP450
IQR 2400
JVM RELAY
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BFR18
Abstract: jca amplifier
Text: BFR18 SILICON PLANAR NPN H IG H -VO LTA G E , H IG H -C U R R E N T A M PLIFIER The BFR 18 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. This device is designed for amplifier applications over a wide range of voltage and current.
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BFR18
BFR18
20MHz
300jus,
jca amplifier
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BFX17
Abstract: No abstract text available
Text: SILICON PLANAR NPN B F X 17 CLA SS C V H F A M P L IF IE R The BFX 17 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-voltage, high-current class C VHF amplifier applications. A B S O L U T E M A X I M U M R A T IN G S
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BFX17
O-391
BFX17
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TRANSISTOR 2SC
Abstract: transistor 2sc 18 2SC2522 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc
Text: SILICON HIGH SPEED POWER TRANSISTOR 2SC 2522 2SC 2523 S e p te m b e r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET T he 2 S C 2 5 2 2 /2 S C 2 5 2 3 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h
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2SC2522
2SC2523
50jU-A,
300jus
TRANSISTOR 2SC
transistor 2sc 18
transistor 2sc pnp
fujitsu ring emitter 2sc2523
high power switching transistor 2sc
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SL5505
Abstract: No abstract text available
Text: HEWLETT-PACKARD-i CMPNTS EOE D • 44M75Ô4 0001,020 1 ■ - ■— 1 T - 41-83 Wtinl mLHM HIGH SPEED OPTOCOUPLER H E W LE TT PACKARD % OUTLINE DRAWING* SL5505 SCHEMATIC S w im > ll9lÆ Æ -T Y ?Ê M J« Ô Ê R -DATE CODE I 7 36 ! 29ÖX B » -260
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44M75
SL5505
IJJ25)
300jus.
SL5505
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2SC2526
Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h
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2SC2525
2SC2526
50juA
300jus
2SC2526
TRANSISTOR 2Sc 2525
TRANSISTOR 2SC
TRANSISTOR 2SC2525
2SA1076
LC 311
TRANSISTOR 2sc2526
"ring emitter"
2SC25
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SGSD00036
Abstract: SGSD00037 SGSD00038 SGSD00039 SGSD00040 SGSD00041 Lb 598 d transistor* SGSD00038
Text: S G S-THOHSON G7E D I 7121237 GGlflTMB 1 73C 18771 D Z ? - t * SGSD00036/38 SGSD00037/39 SGSD00040/41 MULTIEPITAXIAL MESA HOLLOW EMITTER NPN A D V A N C E D AT A H IGH V O LT A G E FAST SW ITCHING POWER T R A N SIST O R S The SGSD00036 and SGSD00038, the SGSD00037 and SGSD00039, the SGSD00040 and
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7121S37
SGSD00036/38
SGSD00037/39
SGSD00040/41,
SGSD00036
SGSD00038,
SGSD00037
SGSD00039,
SGSD00040
SGSD00041,
SGSD00038
SGSD00039
SGSD00041
Lb 598 d
transistor* SGSD00038
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Untitled
Abstract: No abstract text available
Text: “BIG IDEAS IN BIG POWER ” • ■ ■ PowerTech ■ 40 AMPERES PT-3526 HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.5V @ 20A h p E . 5 m in. @ 4 0 A I s / B .
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PT-3526
300jusec
100/iA
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C322 diode
Abstract: 12n05 p12n05 SEFM12H05
Text: S G S-T H O n S O N 07E D 73C 17 598 712^237 D O lfllD l V N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors, ABSOLUTE M AXIM U M RATINGS
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SEFM12NQ5
SEFM12N06
SEFP12N05
SEFP12N06
0V/60V
12N05
12N06
300jus,
C322 diode
p12n05
SEFM12H05
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2N2484A
Abstract: No abstract text available
Text: REVISIONS m u ltico m p ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP § REV DOC. NO. S P C -F005 DESCRIPTION DRAWN RELEASED BYF 1885 DATE * Effective: 7 / 8 / 0 2
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-F005
10juA,
10k0hm
300jus,
2N2484A
35C0692
2N2484A
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transistor 2sc4460
Abstract: 2SC4460
Text: Ordering number: EN 3331 2SC4460 No.3331 NPN Triple Diffused P lanar Silicon T ransistor I sm i Y o Switching Regulator Applications F e a tu r e s • High breakdow n voltage, high reliability • F a st sw itching speed •Wide ASO • Adoption of MBIT process
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2SC4460
300jus
transistor 2sc4460
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2n6449
Abstract: No abstract text available
Text: TELEDYNE Eö E COMPONENTS Ö H T b a a D ÜQ Üfc.552 T -\ S HIGH VOLTAGE 1 2N6449 2N6450 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 559 TO -39 Package • HIGH BVqss - • • 300V MIN 2N6449
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2N6449
2N6450
2N6449)
2N6450
-10juA,
300jus.
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Untitled
Abstract: No abstract text available
Text: REVISIONS L m ulticom p DCP # REV DESCRIPTION DRAWN DATE Effective: 7 / 8 / 0 2 * DCP No: 1398 CHECKD DATE RELEASED HO 12 2 /0 2 JWM 12 2 /0 2 DJC 12 2 /0 2 UPDATED TO ROHS COMPLIANCE EO 0 2 /0 3 /0 6 HO 2 /6 /0 6 HO 2 /6 /0 6 1262 B DOC. NO. SPC— F004
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2N2222A
300MHz
300jus,
2N2222A
35C0690
SPC-F004
SPC-F004
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFETS IRFR9024/20 IRFU9024/20 FEATURES D -P A K • L o w e r R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFR9024/20
IRFU9024/20
IRFR9024/9Ã
IRFR9024/U9024
FR9020/U9020
IRFU9024/902Ã
IRFR9020/U9020
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hh 004 TO92
Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
hh 004 TO92
VN2406M
VN2406L
vn1710m
VN1206M
VN1706M
VN2406B
siliconix VN10KM
VN2410M
VN1206L
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2SC3087
Abstract: SC46 T0220AB
Text: I O rd e rin g n u m b e r: EN 1 O T 1F 2SC3087 No.lOllB NPN Triple Diffused Planar Silicon Transistor 500V/5A Switching Regulator Applications Features • High breakdown voltage V cB O = 800V • High switching speed • Wide ASO Absolute Maximum Ratings/Ta = 25°C
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2SC3087
00V/5A
2SC3087
SC46
T0220AB
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IRFS530
Abstract: IRFS531
Text: N-CHANNEL POWER MOSFETS IRFS530/531 FEATURES • • • • • • • Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRFS530/531
IRFS530
IRFS531
O-220F
7Tb4142
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HXTR-5104
Abstract: S21E transistor 5104 db Hxtr 5104 ltp 521 11 C u50
Text: H E W L E T T ^ PACKARD COMPONENTS LINEAR POWER TRANSISTOR HXTR-5104 Features H IG H P1dB L IN E A R PO W ER 29 dBm Typical at 2 G Hz H IG H P 1dB G A IN 9 dB Typical at 2 GHz BIPOLAR TRANSISTORS . LOW D IS T O R T IO N H IG H P O W E R -A D D E D E F F IC IE N C Y
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HXTR-5104
HPAC-200
HXTR-5104
S21E
transistor 5104 db
Hxtr 5104
ltp 521
11 C u50
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