Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS1M8-XXX 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 17, 20, 25, 35, 45, 55ns Organized as two banks of 512Kx8 Revolutionary, Center Power/Ground Pinout Commercial, Industrial and Military Temperature Ranges Packaging: 5 Volt Power Supply
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS1M8V-XCX ADVANCED* 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout ■ PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW Packaging: • 32 pin, Hermetic Ceramic DIP Package 300
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Untitled
Abstract: No abstract text available
Text: WS1M8V-XCX 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout 32 DIP TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS1M8-XCX PRELIMINARY* 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 70, 85, 100ns Evolutionary, Corner Power/Ground Pinout Packaging: • 32 pin, Hermetic Ceramic DIP Package 300 Organized as two banks of 512Kx8 Commercial, Industrial and Military Temperature
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2x512Kx8
100ns
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A0-18
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Untitled
Abstract: No abstract text available
Text: FTS1MX8-XXX 1MX8 organised 2x512Kx8 SRAM FEATURES Access Times 17, 20, 25, 35, 45, 55ns Organised as two banks of 512Kx8 Revolutionary, Center Power/Ground Pinout Commercial, Industrial and Military Temperature Ranges Packaging: 5 Volt Power Supply
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Untitled
Abstract: No abstract text available
Text: WS1M8-XCX White Electronic Designs PRELIMINARY* 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 70, 85, 100ns Evolutionary, Corner Power/Ground Pinout Packaging: • 32 pin, Hermetic Ceramic DIP Package 300 Organized as two banks of 512Kx8
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2x512Kx8
100ns
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A0-18
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs 2x512Kx8 DUALITHIC SRAM ADVANCED* PIN CONFIGURATION FOR WS1M8V-XCX FEATURES • Access Times 17, 20, 25, 35, 45, 55ns 32 DIP TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS1M8V-XCX ADVANCED* 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Evolutionary, Corner Power/Ground Pinout ■ PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW Packaging: • 32 pin, Hermetic Ceramic DIP Package 300
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Untitled
Abstract: No abstract text available
Text: WS1M8-XCX 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX • Access Times 70, 85, 100ns ■ Evolutionary, Corner Power/Ground Pinout 32 DIP ■ Packaging: TOP VIEW 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5
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100ns
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WS1M8-XXX 2x512Kx8 DUALITHIC SRAM FEATURES Access Times 17, 20, 25, 35, 45, 55ns Organized as two banks of 512Kx8 Revolutionary, Center Power/Ground Pinout Commercial, Industrial and Military Temperature Ranges Packaging:
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EDI9F81025C70BPC
Abstract: EDI9F81025C100BPC EDI9F81025C85BPC EDI9F81025LP70BPC
Text: EDI9F81025C 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features 2x512Kx8 bit CMOS Static Random Access Memory • Access Times: 70, 85, and 100ns • Common Address and Data Pins • Data Retention Function EDI9F81025LP • TTL Compatible Inputs and Outputs
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EDI9F81025C
2x512Kx8
100ns
EDI9F81025LP)
EDI9F81025C
512Kx8
512Kx8
EDI9F81025C70BPC
EDI9F81025C100BPC
EDI9F81025C85BPC
EDI9F81025LP70BPC
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Untitled
Abstract: No abstract text available
Text: WS1M8-XXX HI-RELIABILITY PRODUCT 2x512Kx8 DUALITHIC SRAM FEATURES • Organized as two banks of 512Kx8 ■ Access Times 17, 20, 25, 35, 45, 55ns ■ Revolutionary, Center Power/Ground Pinout ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging:
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A018
Abstract: No abstract text available
Text: WS1M8-XXX HI-RELIABILITY PRODUCT 2x512Kx8 DUALITHIC SRAM FEATURES • Access Times 17, 20, 25, 35, 45, 55ns ■ Revolutionary, Center Power/Ground Pinout ■ Organized as two banks of 512Kx8 ■ Packaging: • 32 pin, Hermetic Ceramic DIP Package 300
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2x512Kx8
512Kx8
A018
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WA126
Abstract: GA-311
Text: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory
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EDI9F81025C
2x512Kx8
100ns
EDI9F81025LP)
EDI9F81025C
512Kx8
WA126
GA-311
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mz70
Abstract: No abstract text available
Text: EDI9F81025C ^ E D I ELECTRONC œ SIG N a N C I 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory
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EDI9F81025C
2x512Kx8
EDI9F81025C
100ns
EDI9F81025LP)
512Kx8
mz70
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Untitled
Abstract: No abstract text available
Text: WDÍ EDI9F81025C ELECTRONIC DESIGNS INC. • Surface Mount Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS Module , Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi layered epoxy laminate FR4 substrate.
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EDI9F81025C
2x512Kx8
EDI9F81025C
512Kx8
100ns.
EDI9F81025LP,
EDI9F81025LP70BPC
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Untitled
Abstract: No abstract text available
Text: WS1M8-XXX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES • A c c e s s T i m e s 17, 20, 25, 35, 45, 5 5 n s ■ R e v o lu tio n a r y , C e n t e r P o w e r / G r o u n d P in o u t ■ P a c k a g in g : ■ C o m m e r c i a l , In d u s tr ia l and M i l i t a r y T e m p e r a t u r e R a ng e s
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2x512Kx8
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Untitled
Abstract: No abstract text available
Text: 77 WS1M8V-XCX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • 32 DIP TOP VIEW A 18E 1 ^ 31 □ A15 A12C 4 A 7C 5 29 □ WE E E A4 E A3 E A2 E A1 E AO E 28 □ A13 A6 6 27 □ A8 7 26 □ A9 GND
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2x512Kx8
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EDI9F81025C100BPC
Abstract: EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC
Text: WDI EDI9F81025C ELECTRONIC DESIGNS INC. . High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.
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EDI9F81025C
2x512Kx8
EDI9F81025C
512Kx8
100ns.
EDI9F81025LP,
EDI9F81025C100BPC
EDI9F81025C70BPC
EDI9F81025C85BPC
EDI9F81025LP70BPC
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Untitled
Abstract: No abstract text available
Text: a W S1M8-XCX WHITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX 32 DIP TOP VIEW A18C 1 E ^ 31 □ A15 30 □ A17 A7C 5 28 □ A13 E A5 E A4 E A3 E A2 E A1 E AO E i/ooE i/oi E E volutionary, Corner P ow er/G round Pinout
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2x512Kx8
100ns
512Kx8
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI9F81025C ELECTRONIC DESIGNS INC. • Surface Mount Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi 2x512Kx8 bit CMOS Static Random Access Memory
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EDI9F81025C
2x512Kx8
100ns
EDI9F81025LP)
EDI9F81025C
512Kx8
100ns.
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Untitled
Abstract: No abstract text available
Text: 77 WS1M8V-XCX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX • A cce ss Tim es 17, 20, 25, 35, 45, 55ns 32 DIP TOP VIEW A18E 1 A16C 2 A14C 3 A12C 4 A7C 5 A6 E 6 A5 E 7 A4 E 8 A3 E 9 ^ A2 E 10 A1 E 11
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Untitled
Abstract: No abstract text available
Text: 77 WS1M8-XCX M/HITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX • 32 DIP TOP VIEW A18C 1 ^ A16C 2 32 A cce ss Tim e s 70, 8 5 , 100ns ■ E v o lu tio n a ry , C orn e r P o w e r/G ro u n d P in o u t
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Untitled
Abstract: No abstract text available
Text: a WS1M8V-XCX WHITE /MICROELECTRONICS 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8V-XCX 32 DIP TOP VIEW A18C 1 W 32 • A ccess Tim es 17, 20, 25, 35, 45, 55ns ■ E volutionary, Corner P ow er/G round Pinout ■ A16C 2 31 □ A15
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