TF-2502
Abstract: No abstract text available
Text: 2SK3784-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters
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2SK3784-01
O-220AB
TF-2502
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2SK3789-01R
Abstract: 12/24 v dc-dc converter schematic
Text: 2SK3789-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3789-01R
2SK3789-01R
12/24 v dc-dc converter schematic
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nec k 1006
Abstract: nec 1006 2SK3783 2SK378
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3783 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3783 is suitable for converter of ECM. 1.0 0.6 FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
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2SK3783
2SK3783
4pXSLP04
nec k 1006
nec 1006
2SK378
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2SK3781-01R
Abstract: No abstract text available
Text: 2SK3781-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3781-01R
2SK3781-01R
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2SK3789-01R
Abstract: 2SK378
Text: 2SK3789-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3789-01R
2SK3789-01R
2SK378
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Untitled
Abstract: No abstract text available
Text: 2SK3787-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators
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2SK3787-01MR
O-220F
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2SK3785-01MR
Abstract: mosfet 10a 800v MOSFET 800V 10A mosfet 10a 800v high power TF-2502
Text: 2SK3785-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators
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2SK3785-01MR
O-220F
2SK3785-01MR
mosfet 10a 800v
MOSFET 800V 10A
mosfet 10a 800v high power
TF-2502
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2SK3780-01
Abstract: No abstract text available
Text: 2SK3780-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3780-01
2SK3780-01
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2SK3780-01
Abstract: power supply 100v 30a schematic
Text: 2SK3780-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3780-01
2SK3780-01
power supply 100v 30a schematic
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2SK3788-01
Abstract: No abstract text available
Text: 2SK3788-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3788-01
2SK3788-01
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2SK3782
Abstract: D17001 NEC PART NUMBER MARKING
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3782 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3782 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33
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2SK3782
2SK3782
3pXSOF03
D17001
NEC PART NUMBER MARKING
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2SK3783
Abstract: V401200
Text: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK3783 N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK3783 は，ゲート - ソース間にダイオードと高抵抗を内
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2SK3783
4pXSLP04
D17002JJ1V0DS00
D17002JJ1V0DS
2SK3783
V401200
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2SK3788-01
Abstract: No abstract text available
Text: 2SK3788-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3788-01
2SK3788-01
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48v to 5v dc schematic
Abstract: 2SK3781-01R
Text: 2SK3781-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3781-01R
48v to 5v dc schematic
2SK3781-01R
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3782
Abstract: No abstract text available
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SK3782
D17001JJ1V0DS
M8E02
2SK3782
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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JFET ecm
Abstract: N1475 rs630 2SK3717 2SK3718 2SK3719 2SK3782 2SK3783 2SK4027 2SK4028
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SK3717
2SK3718
2SK3719
2SK3782
2SK3783
2SK4027
2SK4028
D17530JJ1V0IF001
M8E02
D17530JJ1V0IF
JFET ecm
N1475
rs630
2SK3717
2SK3718
2SK3719
2SK3782
2SK3783
2SK4027
2SK4028
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fmh*23N50E
Abstract: FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF
Text: 1959-2012:QuarkCatalogTempNew 9/11/12 9:05 AM Page 1959 25 Diodes, IGBTs and MOSFETs Features: ᭤ Low VF ᭤ Super High Speed Switching ᭤ High Reliability By Planer Design ø2.5 Application: ᭤ High Speed Switching ᭤ Ultra Small Package, Possible for
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ERA82-004
SC802-04
ERA81-004
ERB81-004
ERC81-004
SC802-06
ERA83-006
ERA85-009
ERA92-02
SC9202-2
fmh*23N50E
FMH23N50E
N-channel MOSFET to-247
fmv23n50e
ic 2535
fmh23n50
FGW40N120HD
FMV20N60S1
FMW30N60S1HF
FMW20N60S1HF
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2SK3783
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2sk4005
Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321
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2SK301
2SK302
2SK303
2SK304
2SK308
2SK309
2SK310
2SK311
2SK312
2SK313
2sk4005
2SK385
2SK332
2SK339
2SK309
2SK400
2SK336
2SK386
2sk317
2SK354
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2sk405 2sj115
Abstract: 2SK389 2SK400 2SK385 2SJ109 2SJ112 2SJ114 2SK388 2SK373 2SK370
Text: - 46 - f M £ tt £ m W l % 3: fe V* & % K V * ft (V) (A) m ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft te % te (Ta=25tî) IÇfcU (min) (max) V d s (V) (V) (V) (min) (max) Vd s (A) (A) (V) g m (min) (S) Id (A) Vd s (V) W Id (A) LF HV A, CC N D -100 GDS
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2SK368
2SK369
2SK370
2SK371
2SK372
2SK386
2SK387
2SK388
20mVmax
2SJ109
2sk405 2sj115
2SK389
2SK400
2SK385
2SJ112
2SJ114
2SK388
2SK373
2SK370
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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