2SK3147S Search Results

2SK3147S Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK3147STR-E		Renesas Electronics Corporation	Nch Single Power Mosfet 100V 5A 130Mohm DPAK(S)/To-252

2SK3147S Price and Stock

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Renesas Electronics Corporation 2SK3147S N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Package Shape: RECTANGULAR; No. of Elements: 1;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SK3147S		195			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Hitachi Ltd 2SK3147(S) N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SK3147(S)		49			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK3147S Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK3147(S)		Hitachi Semiconductor	Power switching MOSFET		Original	PDF
2SK3147S		Kexin	N-Channel MOSFET		Original	PDF
2SK3147(S)		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF
2SK3147S		Renesas Technology	SMD, High Speed Power Amplifier, 100V 5A 20W, MOS-FET N-Channel enhanced		Original	PDF
2SK3147S		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF
2SK3147S		TY Semiconductor	N-Channel MOSFET - TO-252		Original	PDF
2SK3147STL-E		Renesas Technology	Silicon N Channel MOS FET High Speed Power Switching		Original	PDF

2SK3147S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK3147S Abstract: No abstract text available Text: IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1	Original	2SK3147S O-252 2SK3147S	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1	Original	2SK3147S O-252	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
2SK3147 Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
2SK3147 Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C Text: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous: ADE-208-731) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source	Original	2SK3147 REJ03G1072-0200 ADE-208-731) PRSS0004ZD-B PRSS0004ZD-C 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C	PDF
2SK3147 Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C Text: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0300 Rev.3.00 Aug 17, 2009 Features • Low on-resistance RDS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B	Original	2SK3147 REJ03G1072-0300 PRSS0004ZD-B PRSS0004ZD-C 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C	PDF