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    2SK2996 Price and Stock

    Toshiba America Electronic Components 2SK2996

    TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,10A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2996 1,443
    • 1 $9
    • 10 $9
    • 100 $9
    • 1000 $4.5
    • 10000 $4.5
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    Bristol Electronics 2SK2996 1,804
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    2SK2996 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2996 Toshiba N-Channel MOSFET Original PDF
    2SK2996 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2996 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2996 Toshiba Original PDF
    2SK2996 Toshiba Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V) Scan PDF
    2SK2996 Toshiba Silicon N channel MOS type field effect transistor for high speed, high voltage switching, chopper regulator, DC-DC converter and motor drive applications Scan PDF
    2SK2996(Q,T) Toshiba 2SK2996 - Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220NIS Original PDF

    2SK2996 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2996 equivalent

    Abstract: 2sk2996 3RH19 21-1DA11
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		PDF 2SK2996 2SK2996 equivalent 2sk2996 3RH19 21-1DA11

    2SK2996

    Abstract: No abstract text available
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		PDF 2SK2996 2SK2996

    k2996

    Abstract: k2996 transistor K2996 equivalent equivalent k2996 transistor k2996 2sk2996 k299 transistor 2sk2996 2SK2996 equivalent toshiba motor
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		PDF 2SK2996 k2996 k2996 transistor K2996 equivalent equivalent k2996 transistor k2996 2sk2996 k299 transistor 2sk2996 2SK2996 equivalent toshiba motor

    K2996

    Abstract: k2996 transistor transistor k2996 2SK2996 toshiba k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		PDF 2SK2996 K2996 k2996 transistor transistor k2996 2SK2996 toshiba k2996

    k2996

    Abstract: K2996 equivalent k2996 transistor 2sk2996 2SK2996 equivalent transistor k2996 equivalent k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance z Low leakage current


    Original     		PDF 2SK2996 k2996 K2996 equivalent k2996 transistor 2sk2996 2SK2996 equivalent transistor k2996 equivalent k2996

    2SK2996

    Abstract: No abstract text available
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) l High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		PDF 2SK2996 2SK2996

    k2996

    Abstract: k2996 transistor k299 transistor k2996
    Text: 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.8 S (typ.)


    Original     		PDF 2SK2996 k2996 k2996 transistor k299 transistor k2996

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


    Original     		PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SK3562

    Abstract: 2SK3568 2SK2996 2SK3561 2SK3567 2SK3563 MRAM TO220-NIS 2SK2545 220SIS
    Text: VOLUME 131 東芝半導体情報誌アイ 2003年6月号 CONTENTS 6 INFORMATION •大分に最先端システムLSI製造棟を建設 .P2 ■次世代携帯機器向けの 新しい小型SDメモリーカード .P2 ■1メガビットMRAMを開発 .P2


    Original     		PDF 03-3457-3405FAX. 300mmLSI 200343500300mm 100m2 800m2 700m2 TC7MTX03FK 10msMAX) 2SK3562 2SK3568 2SK2996 2SK3561 2SK3567 2SK3563 MRAM TO220-NIS 2SK2545 220SIS

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 r •


    OCR Scan     		PDF 2SK2996 II111

    2SK2996

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3 r •


    OCR Scan     		PDF 2SK2996 2SK2996

    2sk2996

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3


    OCR Scan     		PDF 2SK2996 2sk2996

    2SK2996

    Abstract: slms 2.0 SLMS 2
    Text: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS r < v> • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2996 2SK2996 slms 2.0 SLMS 2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • ¿3.2 ±0.2 10±0.3 Low Drain-Source ON Resistance : Rd S (ON) = 0.74 il (Typ.)


    OCR Scan     		PDF 2SK2996 III11

    2SK2996

    Abstract: 2SK2996(Q)
    Text: TOSHIBA 2SK2996 SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS Low Drain-Source ON Resistance : Rd S(ON) = 0.740 (Typ.)


    OCR Scan     		PDF 2SK2996 100//A 2SK2996 2SK2996(Q)

    2SK2996

    Abstract: DIODE ED 34
    Text: TO SHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2996 2SK2996 DIODE ED 34

    2SK2996

    Abstract: transistor 1127
    Text: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • •


    OCR Scan     		PDF 2SK2996 20kil) --10A, 2SK2996 transistor 1127