2SK2602
Abstract: SC-65
Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) l High forward transfer admittance : |Yfs| = 5.5 S (typ.) l Low leakage current
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2SK2602
2SK2602
SC-65
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K2602
Abstract: transistor k2602 2SK2602 SC-65
Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current
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2SK2602
K2602
transistor k2602
2SK2602
SC-65
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K2602
Abstract: jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T)
Text: 2SK2602 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅤ 2SK2602 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.9Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5S (標準)
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2SK2602
10VID
SC-65
2-16C1B
K2602
2002/95/EC)
K2602
jeita sc-65
2SK2602
K2602 toshiba
2SK2602(F,T)
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K2602
Abstract: 2SK2602 SC-65
Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current
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2SK2602
K2602
2SK2602
SC-65
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2SK2602
Abstract: SC-65
Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current
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2SK2602
2SK2602
SC-65
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K2602
Abstract: 2SK2602 SC-65
Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current
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2SK2602
K2602
2SK2602
SC-65
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K2602
Abstract: transistor k2602 K2602 toshiba 2SK2602 SC-65
Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current
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2SK2602
K2602
transistor k2602
K2602 toshiba
2SK2602
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON-resistance : RDS (ON) = 0.9 High forward transfer admittance : |Yfs| = 5.5 S (typ.) (typ.) Low leakage current
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2SK2602
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transistor k2602
Abstract: No abstract text available
Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.5 S (typ.) z Low leakage current
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2SK2602
transistor k2602
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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Toshiba TMPA8873
Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6
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SCE0001C
S-167
SCE0001D
Toshiba TMPA8873
TA1343NG
TMPA8891
TMPA8893
tmpa8873
tmpa8859
TC90A96BFG
TB1318FG
TMPA8857
TMPA8853
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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MOSFET TOSHIBA 2SK2917
Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6
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DP0540004
MOSFET TOSHIBA 2SK2917
2sK2750 equivalent
2sk2997
2SK3759
2SJ618
2sk3067
2SK3767
2SK2842 equivalent
2SK2837 equivalent
2SK2843 equivalent
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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TA1343NG
Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理
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p12p13
p17p18
p19p22
SCJ0001D
SCJ0001C
TA1343NG
TB1318FG
pal 011 A SPEAKER OUTPUT IC
TC90A96BFG
tmpa8859
Toshiba TMPA8873
TMPA8893
tmpa8873
TMPA8891
gt30f122
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K2602
Abstract: 2SK2602 SC-65 transistor marking 6A
Text: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : Rd S (O N )~ 0.9O (Typ.)
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2SK2602
K2602
2SK2602
SC-65
transistor marking 6A
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2SK2602
Abstract: SC-65
Text: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd S(ON)“ 0.9O (Typ.)
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2SK2602
SC-65
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2SK2602
Abstract: SC-65
Text: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : R d S (O N )“ 0.9O (Typ.)
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OCR Scan
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2SK2602
2SK2602
SC-65
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance a tt' w T7 * _ Lj_ign r u r w i i r u
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2SK2602
--90V,
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S1998
Abstract: No abstract text available
Text: T O S H IB A 2SK2602 T O SH IB A FIELD EFFECT TRANSISTO R SILICON N C H A N N E L M O S TYPE tt- M O S V 2SK2602 HIGH SPEED, HIGH V O LTAGE SW ITCH IN G APPLIC ATIO NS INDUSTRIAL APPLICATIONS SW ITCH ING REGULATOR APPLICATIO NS • Low Drain-Sorce ON Resistance
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OCR Scan
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2SK2602
S1998
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : RdS ( O N = 0-9^ (Typ.)
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2SK2602
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