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    2SK260 Search Results

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    2SK260 Price and Stock

    Toshiba America Electronic Components 2SK2605(Q) STM CODE

    2SK2605(Q) STM CODE
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    Verical 2SK2605(Q) STM CODE 20,000 20,000
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    Toshiba America Electronic Components 2SK2605

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    Bristol Electronics 2SK2605 364
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    Quest Components 2SK2605 291
    • 1 $14.985
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    ComSIT USA 2SK2605 372
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    Toshiba America Electronic Components 2SK2601(PP,F)

    POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components 2SK2601(PP,F) 72
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    Toshiba America Electronic Components 2SK2604

    5 A, 800 V, 2.2 OHM, N-CHANNEL, SI, POWER, MOSFET
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    Quest Components 2SK2604 5
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    ComSIT USA 2SK2604 8,268
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    Toshiba America Electronic Components 2SK2605QT

    SILICON N CHANNEL MOS TYPE (PI-MOSIII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 2SK2605QT 100
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    Find more 2SK260 price and stock on Findchips.com

    2SK260 Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK260 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK260 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK260 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK260 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK260 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    2SK2600 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2600 Toshiba Original PDF
    2SK2601 Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Original PDF
    2SK2601 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2601 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2601 Toshiba Original PDF
    2SK2601 Toshiba N-Channel Enhancement MOSFET Scan PDF
    2SK2601(F) Toshiba 2SK2601 - MOSFET N-CH 500V 10A 2-16C1B Original PDF
    2SK2602 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2602 Toshiba N-Channel MOSFET Original PDF
    2SK2602 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2602 Toshiba Original PDF
    2SK2602 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2602 Toshiba Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications Scan PDF
    2SK2602(F,T) Toshiba 2SK2602 - MOSFET N-CH 600V 6A 2-16C1B Original PDF

    2SK260 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		PDF 2SK2605

    K2608

    Abstract: 2SK2608 2-10P1B
    Text: 2SK2608 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅢ 2SK2608 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 3.73Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)


    Original     		PDF 2SK2608 O-220AB SC-46 2-10P1B K2608 2002/95/EC) K2608 2SK2608 2-10P1B

    K2606

    Abstract: 2SK2606
    Text: 2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2606 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance


    Original     		PDF 2SK2606 K2606 2SK2606

    K2607

    Abstract: toshiba K2607 K2607 TOSHIBA K2607 transistor transistor k2607 toshiba transistor k2607 2SK2607 TOSHIBA 2SK2607 SC-65
    Text: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : |Yfs|= 7.0 S (typ.)


    Original     		PDF 2SK2607 K2607 toshiba K2607 K2607 TOSHIBA K2607 transistor transistor k2607 toshiba transistor k2607 2SK2607 TOSHIBA 2SK2607 SC-65

    K2604

    Abstract: toshiba k2604 toshiba transistor k2604 2SK2604
    Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		PDF 2SK2604 K2604 toshiba k2604 toshiba transistor k2604 2SK2604

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b

    toshiba K2601

    Abstract: K2601 jeita sc-65 2SK2601
    Text: 2SK2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.56 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)


    Original     		PDF 2SK2601 SC-65 2-16C1B K2601 2002/95/EC) toshiba K2601 K2601 jeita sc-65 2SK2601

    toshiba K2601

    Abstract: K2601 toshiba transistor k2601
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 K2601 toshiba transistor k2601

    K2603

    Abstract: No abstract text available
    Text: 2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2603 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.6 S (typ.)


    Original     		PDF 2SK2603 K2603

    K2605

    Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		PDF 2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA

    toshiba K2601

    Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65
    Text: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK2601 toshiba K2601 toshiba transistor k2601 K2601 2SK2601 SC-65

    2-10P1B

    Abstract: 2SK2608
    Text: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) l High forward transfer admittance : |Yfs|= 2.6 S (typ.) l Low leakage current


    Original     		PDF 2SK2608 2-10P1B 2SK2608

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : |Yfs| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current


    Original     		PDF 2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605

    2SK2602

    Abstract: SC-65
    Text: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) l High forward transfer admittance : |Yfs| = 5.5 S (typ.) l Low leakage current


    Original     		PDF 2SK2602 2SK2602 SC-65

    K2602

    Abstract: jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T)
    Text: 2SK2602 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅤ 2SK2602 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.9Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5S (標準)


    Original     		PDF 2SK2602 10VID SC-65 2-16C1B K2602 2002/95/EC) K2602 jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T)

    2-10P1B

    Abstract: 2SK2608
    Text: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rd S (ON)“ 3.730 (Typ.)


    OCR Scan     		PDF 2SK2608 2-10P1B

    K2602

    Abstract: 2SK2602 SC-65 transistor marking 6A
    Text: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : Rd S (O N )~ 0.9O (Typ.)


    OCR Scan     		PDF 2SK2602 K2602 2SK2602 SC-65 transistor marking 6A

    K2601

    Abstract: 2SK2601 SC-65
    Text: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2601 K2601 2SK2601 SC-65

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI i ^ \ci a n 7 MF • ». m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2607 20kfl)

    K2607 TOSHIBA

    Abstract: 2SK2607 K2607 toshiba K2607 SC-65 VNQ marking MOS *k2607
    Text: TOSHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2607 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9MAX. Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2607 K2607 TOSHIBA 2SK2607 K2607 toshiba K2607 SC-65 VNQ marking MOS *k2607

    K2601

    Abstract: 2SK2601 SC-65
    Text: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 ^ Q MAY •


    OCR Scan     		PDF 2SK2601 K2601 2SK2601 SC-65

    2-10P1B

    Abstract: 2SK2608
    Text: TOSHIBA 2SK2608 SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RßS (ON) = 3.73 ü, (Typ.) High Forward Transfer Admittance : |Yfs| = 2.6 S (Typ.)


    OCR Scan     		PDF 2SK2608 2-10P1B 2SK2608

    2SK2602

    Abstract: SC-65
    Text: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd S(ON)“ 0.9O (Typ.)


    OCR Scan     		PDF 2SK2602 SC-65

    transistor 2sk2605

    Abstract: 2sk2605 j3d marking
    Text: T O SH IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rßg (ON)= 1-9^ (Typ.) tt: j.x ig_ln tti_


    OCR Scan     		PDF 2SK2605 s100//s J--25 --90V, --27mH transistor 2sk2605 2sk2605 j3d marking