2SK1895
Abstract: No abstract text available
Text: Ordering number:EN4207 N-Channel Silicon MOSFET 2SK1895 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1895]
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EN4207
2SK1895
2SK1895]
O-220ML
2SK1895
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2SK1896
Abstract: No abstract text available
Text: Ordering number : EN4647 SANYO Semiconductors DATA SHEET 2SK1896 N-Channel Silicon MOSFET DC-DC Converter,Motor Drive Appliccations Features • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting.
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EN4647
2SK1896
2SK1896
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2SK1897
Abstract: No abstract text available
Text: Ordering number:EN4208 N-Channel Silicon MOSFET 2SK1897 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1897]
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EN4208
2SK1897
2SK1897]
O-220ML
2SK1897
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EN4645
Abstract: 2SK1890
Text: Ordering number:EN4645 N-Channel Silicon MOSFET 2SK1890 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1890] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications
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EN4645
2SK1890
2SK1890]
2SK1890-applied
EN4645
2SK1890
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2SK1898
Abstract: No abstract text available
Text: Ordering number:EN4209 N-Channel Silicon MOSFET 2SK1898 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1898] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following
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EN4209
2SK1898
2SK1898]
2SK1898-applied
2SK1898
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2SK1897
Abstract: No abstract text available
Text: Ordering number:EN4208 N-Channel Silicon MOSFET 2SK1897 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1897]
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EN4208
2SK1897
2SK1897]
O-220ML
2SK1897
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Untitled
Abstract: No abstract text available
Text: 2SK1891 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)15 I(D) Max. (A)35 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)140 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.65 Minimum Operating Temp (øC)-55
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2SK1891
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2SK1896
Abstract: No abstract text available
Text: Ordering number:EN4647 N-Channel Silicon MOSFET 2SK1896 DC-DC Converter, Motor Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm
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EN4647
2SK1896
2SK1896]
O-220ML
2SK1896
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2SK1891
Abstract: No abstract text available
Text: Ordering number:EN4206 N-Channel Silicon MOSFET 2SK1891 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SK1891] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
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EN4206
2SK1891
2SK1891]
2SK1891-applied
2SK1891
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Untitled
Abstract: No abstract text available
Text: 2SK1894 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)70 Minimum Operating Temp (øC)
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2SK1894
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2SK1899
Abstract: No abstract text available
Text: Ordering number:EN4648 N-Channel Silicon MOSFET 2SK1899 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A [2SK1899] 10.2 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications
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EN4648
2SK1899
2SK1899]
2SK1899applied
2SK1899-applied
2SK1899
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2SK1895
Abstract: No abstract text available
Text: Ordering number:EN4207 N-Channel Silicon MOSFET 2SK1895 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK1895]
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EN4207
2SK1895
2SK1895]
O-220ML
2SK1895
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Untitled
Abstract: No abstract text available
Text: 2SK1898 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)1.65 Minimum Operating Temp (øC)-55
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2SK1898
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Untitled
Abstract: No abstract text available
Text: 2SK1891 2090_LD Low Drive Series V Dss = 3 0 V 2093 INI Channel Power MOSFET 4206 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Surface mount type device making the following possible. • Reduction in the number of m anufacturing processes for 2SK1891-applied equipment.
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2SK1891
2SK1891-applied
10//S,
51193TH
AX-8377
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2SK1898
Abstract: 2824I
Text: 2SK1898 2093 LD L o w D riv e S e rie s V DSs = 6 0 V 2090 N Channel Power MOSFET 4209 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in th e num ber of m anufacturing processes for 2SK1898-applied equipm ent.
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2SK1898
2SK1898-applied
10//S,
13c154
2SK1898
2824I
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2SK1897
Abstract: EN4208
Text: Ordering n u m b e r:E N 4 2 0 8 SMIYO _ 2SK1897 N-Channel MOS Silicon FET No.4208 Very High-Speed Switching Applications i F eatu res - Low ON resistance. • Very high-speed switching. - Low-voltage drive. • Micaless package facilitating mounting.
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EN4208
2SK1897
2SK1897
EN4208
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rain
Abstract: No abstract text available
Text: 2SK1897 LD L o w D rive S eries V DSs = 6 0 V 2063 N Channel Power M OSFET •.&4208 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M icaless package facilitating mounting. is o lu te M ax im u m R a tin g s a t Ta = 25°C
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2SK1897
42893TH
AX-8377
rain
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2SK1899
Abstract: No abstract text available
Text: Ordering number: EN4648 2SK1899 No.4648 samo N-Channel MOS Silicon F E T Very H igh-Speed Sw itching A pplications 1 Features -Low ON resistance. •Very high-speed switching. •Low-voltage drive. •Surface mount type device making the following possible.
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EN4648
2SK1899
2SK1899-applied
10//S,
2SK1899
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TR80
Abstract: 2SK1898
Text: Ordering number : EN 4209 2SK1898 No.4209 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible.
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2SK1898
2SK1898-applied
TR80
2SK1898
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tc 4206
Abstract: 2SK1891
Text: Ordering num ber:EN4206 _ 2SK1891 No.4206 . N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. ■Surface m ount type device m aking the following possible.
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EN4206
2SK1891
2SK1891-applied
tc 4206
2SK1891
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2SK1895
Abstract: ds 42-07 lp-160c
Text: Ordering nu m be r:E N 420 7 2SK1895 No.4207 N-Channel MOS Silicon FET SAMYO Very High-Speed Switching Applications i F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute M axim um R atings atT a = 25°C
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EN4207
2SK1895
2SK1895
ds 42-07
lp-160c
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Untitled
Abstract: No abstract text available
Text: 2SK1895 2063 LD L o w D rive S eries V DSS= 6 0 V N Channel Power M OSFET £ 4 20 7 F e a tu r e s • Low O N re sista n c e . • V ery h ig h -sp eed sw itch in g . • Low -voltage d riv e. • M icaless pack ag e fa c ilita tin g m o u n tin g . A b s o lu te M a x im u m R a ti n g s a t T a = 25°C
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2SK1895
42893T
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AX-8377
Abstract: No abstract text available
Text: 2SK1898 LD L o w D rive S eries V DSS= 6 0 V N Channel Power M OSFET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SKl898-applied equipment.
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2SK1898
2SKl898-applied
2SK1898-applied
51193TH
AX-8377
VD0-30V
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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