BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
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O-251AA
O-247AC
O-220AB
PowerSO-20
BUZ90af
hv82
MGF4919G-01
MGF4919G
MGF2407A-01
BUZ80AF1
6n60
MGF1302-15
SSP 50N06
2n10l
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2sk mosfet
Abstract: 2SK2843 2SK2843 equivalent 2sk to220 2SK284-3
Text: 2SK2843 POWER MOSFET 2SK2843 GENERAL DESCRIPTION FEATURES 1 2SK2843 ORDERING INFORMATION Part Number Package 2SK 2843 TO-220 2 2SK2843 TYPICAL ELECTRICAL CHARACTERISTICS 3
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2SK2843
O-220
2sk mosfet
2SK2843
2SK2843 equivalent
2sk to220
2SK284-3
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MOSFET TOSHIBA 2SK
Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.
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transistor 2sk
Abstract: MOSFET TOSHIBA 2Sj equivalent 2sk2698 mosfet MOSFET TOSHIBA 2SK HIGH POWER MOSFET TOSHIBA equivalent 2sk2837 mosfet TE161 2SK2615 2SK2698 2SK2837
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.
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D1859
Abstract: NP110N04PUG POWER MOS FET 2sj 2sk MP-25ZJ NP36P06SLG NP52N055SUG np82n055 NP55N04SUG NP55N055SDG NP60N03KUG
Text: Power MOS FET NP series Ultra-Low On-Resistance Series Suitable for Automotive Electronic Applications The NP Series has been designed to meet the demanding requirements in the field of automotive electronics. The channel temperature rating is 175°C max., which is 25°C higher than that of 2SK/2SJ Series. The NP Series realizes the
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D18595EJ1V0PF00
D1859
NP110N04PUG
POWER MOS FET 2sj 2sk
MP-25ZJ
NP36P06SLG
NP52N055SUG
np82n055
NP55N04SUG
NP55N055SDG
NP60N03KUG
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K2312
Abstract: j378 K2314
Text: L2-7c-MOS V Maximum Rating Application Type No. Id A DC/DC Converter High Current Switching Motor Drive 2SJ360 “2SJ377 •2SJ378 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 •2SK2312 •2SK2173 '2SK 2313 '2SK 2267 2SK2200 2SK2201
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O-220
T0-220
O-220FL/SM
O-220AB
2SJ360
2SJ377
K2312
j378
K2314
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2SJ122
Abstract: 2SK428 t3jh Hitachi Scans-001 vi-73 diode power Voltage73
Text: HITACHI/ÍOPTOELECTRONICSl r 4496205 73 73C HITACHI / COPTOLLbCI HONICS ’ DE § 44 TL.S0 S □DDTTLT ñ 09969 D T-3?-2/ 2SJ122-SILICON P-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair w ith 2SK 428
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44TbS0S
2SK428
O-220AB)
2SJ122
2SK428
t3jh
Hitachi Scans-001
vi-73 diode power
Voltage73
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2SK1778
Abstract: 2SK1776 peh 165 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167
Text: 11 HITACHI Table 7 : DIII-H Series Typical Characteristics Cont'd Package r I L Type Number VDSS VGSS V (V) 250 r •1 r TO-3P TO-3P-FM 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK 1170 2SK1515 2SK1516
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2SK1671
2SK1401
2SK1401A
2SK1161
2SK1162
2SK1163
2SK1164
2SK1165
2SK1166
2SK1167
2SK1778
2SK1776
peh 165
2SK1161
2SK1162
2SK1163
2SK1164
2SK1165
2SK1166
2SK1167
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2SK3127
Abstract: No abstract text available
Text: TO SH IBA 2SK 3127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 27 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance
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2SK3127
O-220FL
2SK3127
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smd transistor 2f
Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.
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Tap15
FTO-220
S10VB
S15VB
S15VBA
S25VB
S50VB
S10WB
S15WB
S20WB
smd transistor 2f
330 smd
transistor 2sk 168
K2663
smd TRANSISTOR code 2F
2SJ 162
m 147 smd transistor
s4vb 10 73
SMD CODE TRANSISTOR 2SK
smd transistor 1Z
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : Power M O S FET TYPE NAME 2SK 2807-01 L,S : SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Co.,Ltd. CHECKED ‘ 1/l nY 0257-R -004a ± 1.Scope This specifies Fuji Power MOSFET 2SK2807-01 L,S
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2SK2807-01L,
2SK2807-01S
0257-R
-004a
2SK2807-01
0257-R-003a
02S7-R-003a
R-003a
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2SK996
Abstract: 1128A FET 1127
Text: P o w er F-MOS FET 2SK 996 2SK996 Silicon N-channel Power F-M O S FET Package Dim ensions • Features • Low ON resistan ce R ds on : R d s (on) = 1 .2 ii (typ.) • High sw itching ra te : tf = 60ns (typ.) • No secondary breakdown Unit: mm .10 2rr L4m ax
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2SK996
171BS
001712b
2SK996
1128A
FET 1127
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SMD T26
Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
Text: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r
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AX057
AX078
AX057
SMD T26
S5VB 60 59
ic 4101 smd
MML400
smd 1z
SMD Transistors code
ic 4063 smd
2sk 4000
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ctm 2s
Abstract: 2SK1034 rj on
Text: P ow er F-MOS FET 2SK1034 2SK 1034 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance Rj* on : Ri* (on) - 0 .0 9 f t (typ.) • High switching ra te : ti= 8 S n s (typ.) • No secondary breakdown • Low voltage dn v c is possible (Vc* • 4V).
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2SK1034
O-220
ctm 2s
2SK1034
rj on
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2SK2510
Abstract: Diode KD 521 a transistor DK qj diode sg 5 ts b 772 p
Text: h 7 > y X ? MOS Field Effect Transistor 2SK2510 FET iif f l 2SK 2510ßN 3l * * ; M t I ! / t 7 - M O S F E T T ', 7 « o 4y % m > f f l m . x t 0 R ds on 1 = 2 0 m û l ^ : ( @ V gs = 1 0 V , R ds (on) 2 = 3 0 m ( @ V gs = 4 V , Id = 2 0 A ) Id = 2 0 A )
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2SK2510
MP-45F
O-220)
2SK2510
Diode KD 521 a
transistor DK qj
diode sg 5 ts
b 772 p
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2SK1247
Abstract: 717 MOSFET toco FP5V50 4l80
Text: V X v U - X ¿1*7—MOSFET VX SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case : TO-220 2SK 1247 4.6 ±0.2 FP5V 50 500v 5a 2.7 ±o.2 0,7±o.2 (D(D ■ ÆférSt [Unit : : RATINGS A b s o l u t e M a x im u m R a t i n g s m I I te m : •:Jfe':';/ ; f $¥,
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2SK1247
FP5V50)
O-220
2SK1247
717 MOSFET
toco
FP5V50
4l80
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Mosfet T460
Abstract: T460 mosfet LI 803-2 NEC IEI-620 2SK2413 b4sb C947
Text: _L * IK I • M O S B Â l^ e jÆ M O S N E C ^ M O S F ie ld E f fe c t T r a n s is t o r 2 N 51* FET S K 2 4 1 3 ^ ;U /N ° 7 - M O S F E T ^ 'y Æ l i f f l m m miiL : mm; 2SK 2413(âN ^ + ^ ;U iÉ M /\°7 -M O S F E T T ', fêfêjFflft T * U, ^-fST7
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MP-10
Mosfet T460
T460 mosfet
LI 803-2
NEC IEI-620
2SK2413
b4sb
C947
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2sk type
Abstract: transistor+2sk
Text: Field Effect Transistors • Silicon MOS FETs # For Medium-Output Electrical Characteristics Ta = 2 5 °C Absolute Maximum Ratings (Ta —25 °C) Application Pch Switching b (A) (W) max. (fi) 1 Y* 1 typ. (S) (ns) ti (ns) td(off) (ns) Package (V) (on) ton
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O-220F
58Fast
2sk type
transistor+2sk
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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2SK2324
Abstract: 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1036 2SK1331
Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) ton RoS(on) 1Y h I
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2SK758
O-220F
2SK963
2SK1478
A2SK2122
O-220E
2SK1036
2SK766
2SK2324
220E
2SK2129
2SK76
2sk203
2SK1606
2sk2128
2SK996
2SK1331
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2sk type
Abstract: 2SK+series
Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) 1Y h I ton (max.)
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O-220E
O-220F
2SK1331
bT32fl52
2sk type
2SK+series
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2SJ292
Abstract: 2sk mosfet 2SK1950 2SJ295 2SJ299 2SK1919 transistor 2sk 2SJ278 2SJ279 2SJ290
Text: HITACHI 1.5.4 New DIV-L Series 13 • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices
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2SJ2-46
2SJ223
2SJ182
2SJ245
2SJ214
2SJ219
2SJ220
2SJ242
2SJ175
2SJ176
2SJ292
2sk mosfet
2SK1950
2SJ295
2SJ299
2SK1919
transistor 2sk
2SJ278
2SJ279
2SJ290
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25K1772
Abstract: 2SK1763 2SJ300 2SJ214 2SJ295 2sk mosfet TO220FM 2SJ244 2SK1645 2SJ246
Text: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D -IV L Series Item Package
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2SJ244
2SJ246
2SJ245
2SJ317
2SJ298
2SJ300
2SJ299
2SJ278
2SJ279
2SJ290
25K1772
2SK1763
2SJ214
2SJ295
2sk mosfet
TO220FM
2SJ244
2SK1645
2SJ246
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MGF1202
Abstract: MG15G1AM1 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E MG15C4HM1 MG15D4GM1
Text: - 150 - * m MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGX5G6EM1 ffl % M2 M2 M2 M2 M2 M2 M2 & m ÎS + 11/ . \ V* K V X E# * » j£ Vg s * X * * (V) X P d /P c h (A) * * (W) (min) (max) Vd s (V) (V) (V) gm (min) (typ) V d s (S) (V) (S)
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MG15C4HM1
MG15D4GM1
MG15D4HM1
MG15D6EM1
MG15G1AM1
450220AB)
MG30N10E
05typ
O-220AB)
MG30N06EL
MGF1202
MGF1402
mgf1102
MGF1305
MG36N06E
MGF1302
MG35N06E
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