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    2SJ610 Price and Stock

    Toshiba America Electronic Components 2SJ610(TE16L1,NQ)

    MOSFET P-CH 250V 2A PW-MOLD
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    Samtec Inc BDRA-92SJ6-10-12-1100

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    Samtec Inc BDRA-92SJ6-10-12-0500

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    Samtec Inc BDRA-92SJ6-10-12-9999

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    Samtec Inc BDRA-92SJ6-10-12-0100

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    2SJ610 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ610 Toshiba TRANS MOSFET P-CH 250V 2A 3(2-7J1B) Original PDF
    2SJ610 Toshiba Original PDF
    2SJ610 Toshiba P-Channel MOSFET Original PDF
    2SJ610(2-7B1B) Toshiba 2SJ610 - TRANSISTOR 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SJ610(2-7J1B) Toshiba 2SJ610 - TRANSISTOR 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original PDF
    2SJ610(TE16L1,NQ) Toshiba 2SJ610 - MOSFET P-CH 250V 2A PW-MOLD Original PDF

    2SJ610 Datasheets Context Search

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    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)


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    PDF 2SJ610 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)


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    PDF 2SJ610 2SJ610

    Untitled

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 • Low leakage current: IDSS = −100 A (VDS = −250 V) • Enhancement mode: Vth = −1.5 to −3.5 V (VDS = 10 V, ID = 1 mA)


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    PDF 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)


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    PDF 2SJ610 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) · High forward transfer admittance: |Yfs| = 18 S (typ.)


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    PDF 2SJ610 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)


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    PDF 2SJ610 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SJ610 High Speed Switching, High Current Applications Switching Regulator, DC-DC Converter and Motor Drive Applications Features • • • • Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.)


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    PDF 2SJ610 dissipat05 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 • High forward transfer admittance: |Yfs| = 18 S (typ.) • Low leakage current: IDSS = −100 A (VDS = −250 V)


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    PDF 2SJ610 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ610 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 • オン抵抗が低い。


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    PDF 2SJ610 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)


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    PDF 2SJ610 2SJ610

    2SJ610

    Abstract: No abstract text available
    Text: 2SJ610 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ610 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 • オン抵抗が低い。


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    PDF 2SJ610 2SJ610

    Untitled

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV 2SJ610 High Speed Switching, High Current Applications Switching Regulator, DC-DC Converter and Motor Drive Applications Features • · · · Low drain-source ON resistance: RDS (ON) = 1.85 W (typ.)


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    PDF 2SJ610

    Untitled

    Abstract: No abstract text available
    Text: 2SJ610 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ610 Switching Regulator, DC/DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.85 Ω (typ.) • High forward transfer admittance: |Yfs| = 18 S (typ.)


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    PDF 2SJ610 SC-64

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


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    PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    MOSFET TOSHIBA 2SK2917

    Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
    Text: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6


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    PDF DP0540004 MOSFET TOSHIBA 2SK2917 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


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    PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


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    PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


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    PDF TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram