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    2SJ50 Search Results

    2SJ50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ505STL-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -50A 22Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    2SJ504-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -20A 55Mohm To-220Fm Visit Renesas Electronics Corporation
    2SJ506L-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -10A 85Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SJ506STR-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -10A 85Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    2SJ505L-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -50A 22Mohm LDPAK(L)/To-262 Visit Renesas Electronics Corporation
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    2SJ50 Price and Stock

    Rochester Electronics LLC 2SJ501-TB-E

    PCH 2.5V DRIVE SERIES
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    DigiKey 2SJ501-TB-E Bulk 2,219
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    Samtec Inc BE40C-92SJ-5-02-0152

    REPLACEMENT CABLE FOR 50 GHZ, BU
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    Samtec Inc BE40C-92SJ-5-02-0600

    REPLACEMENT CABLE FOR 50 GHZ, BU
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    Samtec Inc BE40C-92SJ-5-02-1000

    REPLACEMENT CABLE FOR 50 GHZ, BU
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    Samtec Inc BE40C-92SJ-5-02-0300

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    2SJ50 Datasheets (87)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ50 Hitachi Semiconductor LOW FREQUENCY POWER AMPLIFIER Scan PDF
    2SJ50 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ50 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SJ50 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ50 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SJ50 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ50 Unknown Scan PDF
    2SJ50 Unknown FET Data Book Scan PDF
    2SJ50 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SJ501 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ501 Sanyo Semiconductor CP Type Transistors Scan PDF
    2SJ501 Sanyo Semiconductor Medium Power Output MOSFETs Scan PDF
    2SJ502 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ502 Sanyo Semiconductor CP Type Transistors Scan PDF
    2SJ503 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ503 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SJ503TP Sanyo Semiconductor P-Channel Silicon MOSFET, DC/DC Converter Apps Original PDF
    2SJ504 Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ504 Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF
    2SJ504 Renesas Technology Silicon P Channel MOS FET Original PDF

    2SJ50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA-2922

    Abstract: Ta2922
    Text: Ordering number:ENN5948A P-Channel Silicon MOSFET 2SJ501 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A [2SJ501] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate


    Original     		PDF ENN5948A 2SJ501 2SJ501] TA-2922 Ta2922

    Hitachi 2SJ

    Abstract: Hitachi DSA00279
    Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline


    Original     		PDF 2SJ505 ADE-208-547 Hitachi 2SJ Hitachi DSA00279

    Hitachi 2SJ

    Abstract: Hitachi DSA002779
    Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance RDS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline


    Original     		PDF 2SJ505 ADE-208-547 Hitachi 2SJ Hitachi DSA002779

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R DS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ504 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ504 ADE-208-546 Hitachi 2SJ Hitachi DSA002757

    2SJ504

    Abstract: ADE-208-546 Hitachi DSA00396
    Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R DS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM


    Original     		PDF 2SJ504 ADE-208-546 220FM 2SJ504 ADE-208-546 Hitachi DSA00396

    2sj509

    Abstract: No abstract text available
    Text: 2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ509 2sj509

    2SJ509

    Abstract: J509
    Text: 2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ509 2SJ509 J509

    2SJ508

    Abstract: No abstract text available
    Text: 2SJ508 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) : |Yfs| = 0.7 S (typ.)


    Original     		PDF 2SJ508 2SJ508

    2SJ503

    Abstract: No abstract text available
    Text: Ordering number:ENN5932 P-Channel Silicon MOSFET 2SJ503 DC/DC Converter Applications Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SJ503] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6 0.85 0.7


    Original     		PDF ENN5932 2SJ503 2083B 2SJ503] 2092B 2SJ503

    2SJ507

    Abstract: No abstract text available
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) l High forward transfer admittance


    Original     		PDF 2SJ507 2SJ507

    2SJ503

    Abstract: No abstract text available
    Text: 注文コード No.N5932 No. N5932 O2699 新 2SJ503 DC/DC コンバータ用 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃ ドレイン・ソース電圧 VDSS ゲート・ソース電圧


    Original     		PDF N5932 O2699 2SJ503 2092B 2SJ503

    current source 5A ac

    Abstract: 2SJ506S TF65 65M1-10
    Text: IC MOSFET SMD Type Hight Speed Power Switching 2SJ506S TO-252 Unit: mm Features Low on-resistance +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 4V gate drive devices. 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.28 1.50-0.1 High speed switching +0.15 0.50-0.15


    Original     		PDF 2SJ506S O-252 current source 5A ac 2SJ506S TF65 65M1-10

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546B Z 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM D G S


    Original     		PDF 2SJ504 ADE-208-546B 220FM D-85622 Hitachi DSA00276

    2SJ505

    Abstract: Hitachi DSA00347
    Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline


    Original     		PDF 2SJ505 ADE-208-547 Hitachi DSA00347

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6178A P-Channel Silicon MOSFET 2SJ502 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2091A [2SJ502] 0.5 0.4 3 0.16 0.95 0.95 2 1.9 2.9 2.5 1 : Gate


    Original     		PDF ENN6178A 2SJ502 2SJ502]

    Untitled

    Abstract: No abstract text available
    Text: 2SJ508 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ508 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ508

    2SJ507

    Abstract: No abstract text available
    Text: 2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ507 2SJ507

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE 2SJ509 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOS V 2SJ509 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SJ509 1-35H -100V) 10/iS

    2SJ507

    Abstract: Toshiba 2SJ Transistor
    Text: TO SHIBA 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt- M O S V 2SJ 507 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 5.1 M AX.


    OCR Scan     		PDF 2SJ507 75MAX. --10V, 2SJ507 Toshiba 2SJ Transistor

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-M O SV 2 SJ 50 7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source On Resistance


    OCR Scan     		PDF 2SJ507 100/xA

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE 2SJ509 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOS V i <; i r n q HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS 4V Gate Drive


    OCR Scan     		PDF 2SJ509 -100V

    2SJ508

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SJ508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ508 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 2SJ508 -100V) -10ton 10jus VDD--80V, 2SJ508

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SJ508 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L 2-7r-MOS V 2SJ508 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • •


    OCR Scan     		PDF 2SJ508 -100V) 10/iS

    output voltage ranges of a ldr

    Abstract: 2SJ509
    Text: TO SH IBA 2SJ509 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ509 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS 4 V Gate Drive


    OCR Scan     		PDF 2SJ509 output voltage ranges of a ldr 2SJ509