2SJ31 Search Results

2SJ31 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SJ319STL-E		Renesas Electronics Corporation	Silicon P Channel MOSFET
2SJ319L-E		Renesas Electronics Corporation	Silicon P Channel MOSFET

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Rochester Electronics LLC 2SJ317NYTR P-CHANNEL SMALL SIGNAL MOSFET
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DigiKey	2SJ317NYTR	Bulk			485	1 - 10 - 100 - 1000 $0.62 10000 $0.62	Buy Now
Rochester Electronics LLC 2SJ316-TD-E PCH 4V DRIVE SERIES
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DigiKey	2SJ316-TD-E	Bulk			1,025	1 - 10 - 100 - 1000 - 10000 $0.29	Buy Now
Rochester Electronics LLC 2SJ317NYTL-E P-CHANNEL SMALL SIGNAL MOSFET
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DigiKey	2SJ317NYTL-E	Bulk			451	1 - 10 - 100 - 1000 $0.67 10000 $0.67	Buy Now
Rochester Electronics LLC 2SJ317NYTR-E P-CHANNEL SMALL SIGNAL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SJ317NYTR-E	Bulk			549	1 - 10 - 100 - 1000 $0.67 10000 $0.67	Buy Now
Aptina Imaging 2SJ316-TD-E 2SJ316-TD-E
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Verical	2SJ316-TD-E		6,000		1,254	1 - 10 - 100 - 1000 - 10000 $0.2993	Buy Now

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2SJ31 Datasheets (75)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ312	Toshiba	TRANS MOSFET P-CH 60V 14A 3(2-10S1B)	Original	PDF
2SJ312	Toshiba	P-Channel MOSFET	Original	PDF
2SJ312	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ312	Toshiba		Original	PDF
2SJ312	Toshiba	Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-Pi-MOS IV)	Scan	PDF
2SJ312	Toshiba	Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications	Scan	PDF
2SJ312(Q)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 14A TO-220FL	Original	PDF
2SJ313	Toshiba	TRANS MOSFET P-CH 180V 1A 3(2-10R1B)	Original	PDF
2SJ313	Toshiba	Pch Power MOSFET; Surface Mount Type: N; Package: TO-220NIS; R DS On (max 5); I_S (A): (max -1)	Original	PDF
2SJ313	Toshiba		Original	PDF
2SJ313	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ313	Toshiba	Silicon P channel field effect transistor for audio frequency power amplifier applications	Scan	PDF
2SJ313O	Toshiba	2SJ313 - TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power	Original	PDF
2SJ313-O	Toshiba	2SJ313 - TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power	Original	PDF

2SJ313O	Toshiba	TRANS MOSFET P-CH 180V 1A 3(2-10R1B)	Original	PDF
2SJ313Y	Toshiba	2SJ313 - TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power	Original	PDF
2SJ313-Y	Toshiba	2SJ313 - TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power	Original	PDF
2SJ313Y	Toshiba	TRANS MOSFET P-CH 180V 1A 3(2-10R1B)	Original	PDF
2SJ313-Y(Q)	Toshiba	2SJ313 - Trans MOSFET P-CH 180V 1A 3-Pin(3+Tab) TO-220NIS	Original	PDF
2SJ314-01	Collmer Semiconductor	FAP-II Series / FAP-IIIA Series MOSFETS	Scan	PDF

2SJ31 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SJ319S Abstract: No abstract text available Text: IC MOSFET SMD Type Silicon P-Channel MOSFET 2SJ319S TO-252 Features Low on-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 High speed switching 3.80	Original	PDF	2SJ319S O-252 -160V 2SJ319S
Hitachi 2SJ Abstract: Hitachi DSA002779 Text: 2SJ319 L , 2SJ319(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline 2SJ319(L), 2SJ319(S)	Original	PDF	2SJ319 Hitachi 2SJ Hitachi DSA002779
2sj317 Abstract: Hitachi 2SJ Hitachi DSA002779 Text: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline 2SJ317	Original	PDF	2SJ317 2sj317 Hitachi 2SJ Hitachi DSA002779
EN4309 Abstract: 2SJ316 Text: Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ316] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max	Original	PDF	EN4309 2SJ316 2SJ316] 25max EN4309 2SJ316
"Power MOSFET" Abstract: 2SJ314-01L Text: 2SJ314-01L,S FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof K-Pack L K-Pack(S) Applications	Original	PDF	2SJ314-01L 00A/s "Power MOSFET"
Untitled Abstract: No abstract text available Text: 2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ315 DC−DC Converter Unit: mm FEATURES z 4− Volt gate drive z Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.0 S (typ.)	Original	PDF	2SJ315 SC-64
Toshiba 2SJ Abstract: No abstract text available Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: \|Yfs\| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ313 2SK2013 SC-67 2-10R1B Toshiba 2SJ
2SJ312 Abstract: J312 A J312 toshiba j312 Text: 2SJ312 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ312 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance	Original	PDF	2SJ312 2SJ312 J312 A J312 toshiba j312
2SJ311 Abstract: 2SJ331 MP-88 Field Effect Transistors 2sj33 Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SJ331 P チャネルパワーMOS FET スイッチング用 2SJ311 は，P チャネルパワーMOS FET でオン抵抗が低く，スイッチング特性が優れており，各種アクチュエータ	Original	PDF	2SJ331 2SJ311 D18444JJ2V0DS00 TC-7971 D18444JJ2V0DS 2SJ33J2V0DS 2SJ331 MP-88 Field Effect Transistors 2sj33
Untitled Abstract: No abstract text available Text: 2SJ314-01L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition)10m Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)	Original	PDF	2SJ314-01L
k2013 Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : \|Yfs\| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)	Original	PDF	2SK2013 2SJ313 SC-67 2-10R1B K2013 k2013 toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ312 Field Effect Transistor Industrial Applications TQ-220FL Unit in mm Silicon P Channel MOS Type L2-7i-MOS IV High Speed, High Current Switching Applications Features • 4-Volt G ate Drive • Low Drain-Source O N R esistance - r d s (ON) = S O m Q (Typ.)	OCR Scan	PDF	2SJ312 TQ-220FL
sb30-03p Abstract: 3SK181 DSE015 3SK189 Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251	OCR Scan	PDF	2SJ187 2SJ190 2SJ193 2SJ284 2SJ285 2SJ286 2SJ287 2SJ288 2SJ289 2SJ316 sb30-03p 3SK181 DSE015 3SK189
A0764 Abstract: 2SJ314-01L T151 Scans-0063210 Text: 2SJ314-01L, S FUJI POWER MOS-FET P-CHANNEL SILICON POWER MOS-FET _ -FAP-III SERIES • Features Outline Draw ings • Hiyh current • Low on-resistance • No secondary breakdown • Low driving power • Hiyh forward Transconductance	OCR Scan	PDF	2SJ314-01L, A0764 2SJ314-01L T151 Scans-0063210

Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ315 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOSlV 2SJ315 DC-DC CONVERTER INDUSTRIAL APPLICATIONS U n it in mm 4-Volt G ate Drive Low D rain-Souree ON R esistance : R d S(ON) —0 .2 5 0 (Typ.) H igh F orw ard T ransfer A dm ittance : \|Yfs\| = 3 .0 S (Typ.)	OCR Scan	PDF	2SJ315
2SJ314-01 Abstract: 2SJ314-01L T151 Text: 2SJ314-01LS FUJI POW ER M OS-FET P-CHANNEL SILICON POWER MOS-FET FAP-III S E R IE S I Features Outline Drawings »Hiyh current *Low on-resistance »No secondary breakdown ►Low driving power »High forward Transconductance »Avalanche-proof ¡Applications	OCR Scan	PDF	2SJ314-01L, 2SJ314-01 2SJ314-01L T151
Untitled Abstract: No abstract text available Text: 2SJ317 Silicon P-Channel MOS FET HITACHI Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline	OCR Scan	PDF	2SJ317 5x20x0
Untitled Abstract: No abstract text available Text: 2SJ317-Silicon P Channel MOSFET OIV-L Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Table 1 Absolute M axim um Ratings (Ta = 25°C)	OCR Scan	PDF	2SJ317----Silicon 2SJ317
2sk2013 2SJ313 Abstract: 2SJ313 2SK2013 Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : \|Yfs\| = 0.7S Typ.) Complementary to 2SJ313	OCR Scan	PDF	2SK2013 2SJ313 2sk2013 2SJ313
2SJ316 Abstract: VDS101 Text: Ordering number: EN 4309 2SJ316 No.4309 P-Channel MOS Silicon FET SAMYO Very High-Speed Switching Applications i Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage	OCR Scan	PDF	2SJ316 10//s, 250mm2 VDS101
2SK2637 Abstract: No abstract text available Text: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV	OCR Scan	PDF	2SJ316 2SJ335 2SJ381 FX207 FX601 2SJ336 2SJ337 2SJ382 2SJ383 2SJ419 2SK2637
2SJ313 Abstract: 2SK2013 SC-65 Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : \|Yfs\| = 0.7 S Typ.) Complementary to 2SJ313	OCR Scan	PDF	2SK2013 2SJ313 2SK2013 SC-65
transistor C1000 Toshiba Abstract: 2SJ313 2SK2013 SV125 Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : \|Yfs\| = 0.7 S Typ. Complementary to 2SK2013	OCR Scan	PDF	2SJ313 2SK2013 transistor C1000 Toshiba 2SJ313 2SK2013 SV125
2SJ312 Abstract: No abstract text available Text: T O S H IB A 2SJ312 2SJ312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-^-MOSlV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in m m TO-220FL 10.3MAX.	OCR Scan	PDF	2SJ312 O-22QFL 2SJ312

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2SJ31 Search Results

2SJ31 Result Highlights (2)

2SJ31 Price and Stock

Rochester Electronics LLC 2SJ317NYTR

Rochester Electronics LLC 2SJ316-TD-E

Rochester Electronics LLC 2SJ317NYTL-E

Rochester Electronics LLC 2SJ317NYTR-E

Aptina Imaging 2SJ316-TD-E

2SJ31 Datasheets (75)

2SJ31 Datasheets Context Search

2SJ319S

Hitachi 2SJ

2sj317

EN4309

"Power MOSFET"

Untitled

Toshiba 2SJ

2SJ312

2SJ311

Untitled

k2013

Untitled

sb30-03p

A0764

Untitled

2SJ314-01

Untitled

Untitled

2sk2013 2SJ313

2SJ316

2SK2637

2SJ313

transistor C1000 Toshiba

2SJ312