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    2SJ228 Search Results

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    2SJ228 Price and Stock

    Foxconn 2SJ2285-002154

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    Bristol Electronics 2SJ2285-002154 2,190
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    Winchester Interconnect 2SJ2285-002154

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    Bristol Electronics 2SJ2285-002154 600
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    Singatron Enterprises Co 2SJ2286-000111

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    Quest Components 2SJ2286-000111 1,600
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    2SJ228 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ228 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ228 Unknown FET Data Book Scan PDF
    2SJ228 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ228 Sanyo Semiconductor Power Mosfets / Transistors Scan PDF

    2SJ228 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EN3813

    Abstract: 2SJ228
    Text: Ordering number:EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ228] 2.5 1.45 1.0


    Original
    PDF EN3813 2SJ228 2SJ228] EN3813 2SJ228

    2SJ228

    Abstract: ITR00113 ITR00114 ITR00115 ITR00116 ITR00117 ITR00118
    Text: 注文コード No.N 3 8 1 3 2SJ228 No. 3 8 1 3 51899 新 2SJ228 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・ラジアルテーピングに対応。


    Original
    PDF 2SJ228 400mA 400mA, ITR00119 ITR00118 --30V --10V ITR00117 2SJ228 ITR00113 ITR00114 ITR00115 ITR00116 ITR00117 ITR00118

    2SJ228

    Abstract: EN3813
    Text: Ordering number:EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ228] 2.5 1.45 1.0


    Original
    PDF EN3813 2SJ228 2SJ228] PW10s, 2SJ228 EN3813

    TT2192

    Abstract: sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF
    Text: Ordering number : E I 0 0 9 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.


    Original
    PDF 2SK1886 2SK4043LS SB100-09K TIG004SS TIG030TS 2SC4493 2SK1887 SB10-18 TIG004T TT2192 sma4212 2SJ519 2sc5681 2SK1871 2SC5044 2SK3666 2sc6091 2SC5688 EC4K01KF

    2SJ228

    Abstract: No abstract text available
    Text: Ordering number: EN3813 2SJ228 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s • Small ON resistance. • Very high-speed switching. • Low-voltage drive. • Meets radial taping. A bsolute M axim um R atings a t Ta = 25°C


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    PDF EN3813 2SJ228 10//S, 2SJ228

    2sc3153

    Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator


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    PDF 2SC3151 T03PB 10to40 2SC3152 2SC3I53 2SC3277 2sc3153 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3448 2SC3449

    Untitled

    Abstract: No abstract text available
    Text: 2087 LD L o w D rive S eries V Dss = 6 0 V P Channel Power MOSFET F e a tu re s • Sm all ON resistance. • Very high-speed switching. • Low-voltage drive. • M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage


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    PDF --800mA, D151MH, A8-7846 2SJ228

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    2S*1206

    Abstract: 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ200 2SJ214 2SJ201
    Text: - 24 - « tt m £ & m m f t ? 1 * K jç. H V m * £ (V) * * P d /P c h (A) % m Í& * * (W) I gss (max) (A) Vg s (V) 0*3 (min) (max) Vd s (A) (A) (V) (Ta=25Xl) (min) (max) Vd s (V) (V) (V) Id (A) (min) (S) Vd s {\ l f (V) 1d (A) 2SJ200 LF PA MOS P E -180 DSS


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    PDF Ta-25 2SJ200 2SJ201 2SJ202 2SJ203 -200b 2SJ204 2SJ221 130ns, 490nstyp 2S*1206 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ214 2SJ201

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


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    PDF 2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD

    J289

    Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
    Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications


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    PDF 3SK265 3SK266 3SK248 12/55m 2/80m 45/-/50m 130m/65m 21/90m MT931224TR J289 K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311