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    2SD966 Search Results

    2SD966 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD966 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD966 Panasonic NPN Transistor Original PDF
    2SD966 Various Russian Datasheets Transistor Original PDF
    2SD966 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD966 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD966 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD966 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD966 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD966 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD966 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD966 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SD966 Datasheets Context Search

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    2SD966

    Abstract: No abstract text available
    Text: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD966 2SD966

    2SD0966

    Abstract: 2SD966
    Text: Transistor 2SD0966 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage


    Original     		PDF 2SD0966 2SD966) 2SD0966 2SD966

    transistor 2sd966

    Abstract: 2SD966 5021H
    Text: Transistor 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the low-voltage power supply.


    Original     		PDF 2SD966 transistor 2sd966 2SD966 5021H

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 M Di ain sc te on na tin nc ue e/ d 8.6±0.2 5.9±0.2 • Features


    Original     		PDF 2002/95/EC) 2SD0966 2SD966)

    2SD966

    Abstract: No abstract text available
    Text: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD966 2SD966

    2SD0966

    Abstract: 2SD966
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SD0966 2SD966) 2SD0966 2SD966

    2SD0966

    Abstract: 2SD966
    Text: Transistors 2SD0966 2SD966 Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2SD0966 2SD966) SC-51 O-92L-A1 2SD0966 2SD966

    2SD0966

    Abstract: 2SD966
    Text: Transistors 2SD0966 2SD966 Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2SD0966 2SD966) 2SD0966 2SD966

    2SD966

    Abstract: No abstract text available
    Text: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD966 2SD966

    Untitled

    Abstract: No abstract text available
    Text: 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD966

    2SD966

    Abstract: 2sd966 equivalent
    Text: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD966 2SD966 2sd966 equivalent

    2SD0966

    Abstract: 2SD966
    Text: Transistor 2SD0966 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the


    Original     		PDF 2SD0966 2SD966) 55nductor 2SD0966 2SD966

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    2SC3941A

    Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
    Text: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732


    OCR Scan     		PDF 2SC3142 2SC3735 2SC24Q4 2SC2791 2SC3737 2SC3738 2SC3608 2SC3358 2SC3791 2SC3143 2SC3941A c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737

    2SC1565

    Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
    Text: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207


    OCR Scan     		PDF 2SD1196 2SD633 2SD1634 2SD2024 1377K 2SD1024 2SD600 2SC495 2SC1212A 2SD946 2SC1565 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD1876 2SD1499

    C2482

    Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
    Text: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC


    OCR Scan     		PDF 2SD1085 2SC3468 2SC2551 2SC3415 2SD1069 2SD772 2SC1570 2SC941TM 2SC458 2SC3311A C2482 C3468 2SC2663 2SC3208 c2981 C2787 M 3211 2sc1510 C1573

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    2SD921

    Abstract: 2SD920 T03B 2SD983 2SB793 2SD933H 2SD947 2SD917 2SD922 2SD923
    Text: - 230 - 13=25*0. *EP(äTc=25'1C m ?± ^ m £ VcBO Vc e o (V) (V) IC ( D C ) föT T V Hout 330 200 7 2SD920 % ± im Reg/PA 200 180 5 Reg/PA 200 180 Reg/PA 150 100 Reg/PA 150 100 Reg/PA 200 HV S W / O ' t O 2SD922 2SD923 % ± im %±Gm -M ± m m 2SD929 2SD933H


    OCR Scan     		PDF 2SD917 2SD920 2SD921 2SD922 2SD923 2SD929 2SD933H 2SD946 2SB789 2SD968 2SD920 T03B 2SD983 2SB793 2SD947 2SD917 2SD922 2SD923

    2SB600 NEC

    Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
    Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .


    OCR Scan     		PDF 2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944

    2SD1165A

    Abstract: D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T
    Text: - 232 - m € Type No. € tt Maniif. =M H SANYO nt s TOSHIBA a b NEC 31 HITACHI m ± il FUJITSU ft T MATSUSHITA jr. H MITSUBISHI □ — A ROHM 2 S D 1135 <- s a 2 S D 1136 * s a 2 S D 1137 ✓ s a 2SD743A 2SD857 2SD1896 s a 2SC2336A 2SC2660 2SD1562A 2 S D 1138 ,


    OCR Scan     		PDF 2SD1135, 2SD1136, 2SD1137 2SD1236 2SD1060 2SD526 2SD525 2SD743A 2SD743A 2SD857B 2SD1165A D 1163 A 2SD1084 D1138 2sc2373 2Sd1165 2sD1307 2SD1961 2SD1265 1170 T

    1271A

    Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
    Text: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513


    OCR Scan     		PDF 2SD1243 2SD1243A 2SD1244 2SD1245 2SD1246 2SD1247 2SD1248 2SD1248K 2SD1251 2SD1252 1271A nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944

    NEC 1357

    Abstract: SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358
    Text: - 238 - m % tt Type No. £ Manuf. H # SANYO It 2Ê TOSHIBA 2SD869 = ft ft 2SD1887 ^ 2SD1884 2SD820 2 S D 1342 = ft 2SD870 H ft 2SD1878 2SD 1343 ✓ 2SD1885 2SD821 2SD 1344 H ft 2SD18B5 2SD871 2SD1061 2SD553 2 S D 1340 2 S D 1341 = 2SD 1345 # 2 S D 134/ = ft


    OCR Scan     		PDF 2SD1340, 2SD1341, 2SD1342 2SD869 2SD820 2SD870 2SD821 2SD871 2SD553 2SD1173 NEC 1357 SD 1351 2SD1370 2SD869 TOSHIBA NEC 2SD288 2sc4329 D1351 2SD1944 2SC3252 k 1358

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266