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    2SD2297 Search Results

    2SD2297 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2sd2297 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    2SD2297 Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SD2297 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SD2297 Hitachi Semiconductor Power Bipolar Transistors Scan PDF
    2SD2297 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2297 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2297 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2297 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2297 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2297 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SD2297 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2297

    Abstract: Hitachi DSA00493
    Text: 2SD2297 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • Built-in damper diode type Outline 2SD2297 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to emitter voltage


    Original
    PDF 2SD2297 2SD2297 Hitachi DSA00493

    Hitachi DSA001650

    Abstract: No abstract text available
    Text: 2SD2297 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • Built-in damper diode type Outline TO-3P 2 1. Base 2. Collector Flange 3. Emitter 1 2 1 ID 3 3 2SD2297 Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SD2297 D-85622 Hitachi DSA001650

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    BU4508DX equivalent

    Abstract: ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
    Text: Philips Semiconductors Power Bipolar Transistors Cross reference list ”PHILIPS TYPE” REFERS TO CLOSEST PHILIPS ALTERNATIVE OR DIRECT EQUIVALENT IF AVAILABLE. Always consider the application and compare data specifications before recommending suitable Philips type


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    PDF 2SC4589 BU4525AF 2SC4692 BU4530AL 2SC4742 BU2508DW 2SC4743 BU4508AX 2SC4744 BU4508DF BU4508DX equivalent ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent

    Z51C

    Abstract: 2SD2297
    Text: HITACHI 2SD2297-— S ilicon NPN Triple Diffused CTV Horizontal Deflection Output Feature • H igh breakdown voltage V C B 0 = 1500 V • B u ilt-in damper diode type Absolute M axim um Ratings Ta = 25°C Item Symbol Rating Unit Collector to emitter voltage


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    PDF 2SD2297-- 2SD2297 Z51C 2SD2297

    2SD2334

    Abstract: 2SD2350 2SD2333 2SD2328 2SD2363 ZSD2361 2SD2312 2SD2331 2SD2323 2SD2294
    Text: Ta=25'C, *Ef](iTc=25'C m z tt & 2SD2294 H i H out 2SD2295 S i H out 2SD2296 H i H out 2SD2297 H i H out 2SD2298 0i H out 2SD2299 H i H out Vc b o Vc e o (V) (V) 1500 1500 1500 p * '• (A) 800 800 800 1 Di ^ *. aBU ink) m (W) I M ^ 14 (Ta=25‘ C) [*EP(átyjH¡S3


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    PDF 2SD2294 2SD2295 2SD2296 2SD2297 2SD2298 2SD2299 2SD2300 2SD2301 2SD23U 2SD2312 2SD2334 2SD2350 2SD2333 2SD2328 2SD2363 ZSD2361 2SD2331 2SD2323 2SD2294

    Untitled

    Abstract: No abstract text available
    Text: 2SD2297 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0= 1500 V • Built-in damper diode type Outline T O -3 P 2SD2297 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit


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    PDF 2SD2297 D-85622

    FC-1200

    Abstract: No abstract text available
    Text: H ITA CH I 2SD2297-Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature i TO -3P * H ig h breakdown voltage V C BO = > 500V • B u ilt -in dam per diode type Absolute Maximum Ratings Ta = 25°C item Symbol Rating Unit C ollector to emitter voltage


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    PDF 2SD2297------Silicon 2SD2297 FC-1200

    Untitled

    Abstract: No abstract text available
    Text: 2SD2297 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCBO- 1500 V • Built-in damper diode type Outline 2SD2297 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to em itter voltage


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    PDF 2SD2297

    2SC3365 -TO3

    Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
    Text: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.


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    PDF GD1377Ã 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC3365 -TO3 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979

    2SC1565

    Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
    Text: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207


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    PDF 2SD1196 2SD633 2SD1634 2SD2024 1377K 2SD1024 2SD600 2SC495 2SC1212A 2SD946 2SC1565 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD1876 2SD1499

    2SD157

    Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
    Text: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589


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    PDF 2SD1592 2SD1141 2SD1446 2SD1237L 2SC3692 2SD1271A 2SD1833 2SD1668 2SD1271 2SD157 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SC4748

    Abstract: 2SC5306 K20-K k08 transistor
    Text: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136


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    PDF 2SD864® 2SD970® 2SD991® 2SD1085® 2SD1114« 2S01115® 2SD1126® k-20k 2SD1127® 2SD1248® 2SC4748 2SC5306 K20-K k08 transistor

    2sc2899 transistor

    Abstract: 2SC4739 2SD1527 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899
    Text: 24 HIT ACH I/ O P T O E L E C T R O N I C S blE ]> • 44^205 0013776 TO? ■ HIT4 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.


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    PDF 44TbSDS 2SC4589 2SC4692 2SC4744 2SC4745 2SC474Ã 2SC4747 2SC4796 2SC4797 2SC4877 2sc2899 transistor 2SC4739 2SD1527 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899

    Toshiba 2SC3281

    Abstract: 2SC2987A 2SC3281 toshiba 2sc3280 2sd1703 2sc3281 toshiba 2SD1398 2SD2068 2sc2562 2sc2681
    Text: - - 248 m. % S T y p e No. 2SD 1701 2SD 1 2SD 1703 / h m 1704 2SD 1705 2SD 1706 2SD 1708 2SD 1709 2SD 1710 2SD 1711 2SD 1712 2SD 1713 2SD 1714 2SD 1715 2SD 1716 2SD 1717 2SD 1718 2SD 1719 2SD 1720 2SD 1721 2SD 1 722 2SD 1 723 ^- 2SD 1724 2SD 1725 2SD 1726


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    PDF 2SD2068 2SD1511 2SC2987A 2SC3281 2SC2681 2SC2750 2SD1645 2SD1638 2SD1275A 2SD1739 Toshiba 2SC3281 2SC2987A 2SC3281 toshiba 2sc3280 2sd1703 2sc3281 toshiba 2SD1398 2SD2068 2sc2562 2sc2681

    2SD2334

    Abstract: 2SD2333 2SD1298 2s02333 2SD1431 2SC3054 2sc3211 2SD2335 2S01876 2SC3535
    Text: - ft m € T y p e No. £ Manuf. = -M SANYO 3£ 2 TOSHIBA a * NEC B ÍL HITACHI ^ it il FUJITSU & T MATSUSHITA fâ T 2SC4480 tö T 2SC4644 2SD 2 2 6 2 □ —A 2SC4480 2SC 3673 2 SD 2 2 6 3 2SD 2 2 6 4 n— A 2SC4482 2SC3671 2 SD 2 2 6 7 3£ 2SD 2 2 6 8 X


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    PDF 2SC4480 2SC3666 2SD2192 2SC4644 2SC4620 2SC3673 2SD2177 2SD1328 2SC4482 2SD2334 2SD2333 2SD1298 2s02333 2SD1431 2SC3054 2sc3211 2SD2335 2S01876 2SC3535

    2SC4927

    Abstract: 2SK1269 2sc2610 transistor 2sd2300 transistor 2sk 2SC2611 2SC4896 TO-22OAB 2SB566 2SB566A
    Text: 24 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment. 4.2 Planar Process Technology


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    PDF 2SC26U 2SC4828 2SC2611 2SK296 2SK296 2SD2299 2SC4927 2SK1269 2sc2610 transistor 2sd2300 transistor 2sk 2SC4896 TO-22OAB 2SB566 2SB566A

    2sc2899 transistor

    Abstract: 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979 2SD781
    Text: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.


    OCR Scan
    PDF GD1377Ã 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2sc2899 transistor 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979 2SD781