2SD206 Search Results

2SD206 Price and Stock

Filter by Manufacturer


Panasonic Electronic Components 2SD20640S TRANS NPN 120V 6A TOP-3F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD20640S	Bulk			80	1 - 10 - 100 $2.22438 1000 $2.22438 10000 $2.22438	Buy Now
Panasonic Electronic Components 2SD20670RA TRANS NPN DARL 100V 2A MT-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD20670RA	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ROHM Semiconductor 2SD2061 Trans GP BJT NPN 60V 7A 3-Pin (3+Tab) TO-220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2SD2061		1,449			1 $0 10 $0 100 $0 1000 $0 10000 $0	Buy Now
ComSIT USA	2SD2061		460			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	2SD2061		46			1 - 10 - 100 - 1000 - 10000 -	Buy Now
ROHM Semiconductor 2SD2061E POWER TRANSISTOR (60V, 3A) Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SD2061E		10,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SD206 Datasheets (90)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD206	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD206	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SD206	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SD206	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD206	Unknown	Cross Reference Datasheet	Scan	PDF
2SD206	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SD206	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD206	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SD206	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD206	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD206	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD206	Shindengen Electric	Semi Conductor Catalog	Scan	PDF
2SD2060	Korea Electronics	Transistors	Scan	PDF
2SD2060	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SD2060	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD2060	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD2060	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2061	ROHM	Power Transistor(120V, 7A)	Original	PDF
2SD2061	Various Russian Datasheets	Transistor	Original	PDF
2SD2061	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SD206 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SD2060 Abstract: 2SB1368 Text: Product Specification www.jmnic.com 2SD2060 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1368 ・Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ・Collector power dissipation: PC=25W(TC=25℃)	Original	PDF	2SD2060 O-220F 2SB1368 O-220F) 2SD2060 2SB1368
2SB1373 Abstract: 2SD2066 Text: SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD2066 ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	PDF	2SB1373 2SD2066 -160V; -20mA 2SB1373 2SD2066
2SD2061 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SD2061 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power	Original	PDF	2SD2061 O-220Fa O-220Fa) 2SD2061
2SD2067 Abstract: No abstract text available Text: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 For low-frequency output amplification (1.0) 0.65 max. ● ● ● ● ● Darlington connection. High foward current transfer ratio hFE.	Original	PDF	2SD2067 2SD2067
2SD2067 Abstract: No abstract text available Text: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.7 4.0 (1.45) 0.8 • Features ● ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 1 2.5±0.5 2 3 2.5±0.1 ● Darlington connection. High foward current transfer ratio hFE.	Original	PDF	2SD2067 2SD2067
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 2.5±0.1 (0.8) • Darlington connection • High forward current transfer ratio hFE	Original	PDF	2002/95/EC) 2SD2067
2SD2066 Abstract: 2SB1373 Text: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3 ● 16.2±0.5 ● High breakdown voltage: VCEO = 160V min.	Original	PDF	2SD2066 2SB1373 2SD2066 2SB1373
2SD2068 Abstract: No abstract text available Text: 2SD2068S Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.16k h(FE) Max. Current gain.40k	Original	PDF	2SD2068S Freq150M 2SD2068
2SD2061 Abstract: No abstract text available Text: Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications	Original	PDF	2SD2061 O-220Fa O-220Fa) 2SD2061
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • Darlington connection • High forward current transfer ratio hFE • Large peak collector current ICP	Original	PDF	2002/95/EC) 2SD2067
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • Darlington connection • High forward current transfer ratio hFE • Large peak collector current ICP	Original	PDF	2002/95/EC) 2SD2067
2SD2066 Abstract: 2SB1373 Text: SavantIC Semiconductor Product Specification 2SD2066 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1373 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base	Original	PDF	2SD2066 2SB1373 2SD2066 2SB1373
2SD2061 Abstract: 60V transistor npn ic2a transistor 2sd2061 2sD2061 transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	O-220 2SD2061 O-220 2SD2061 60V transistor npn ic2a transistor 2sd2061 2sD2061 transistor
2SD2061 Abstract: 2sD2061 transistor transistor 2sd2061 60V transistor npn ic2a Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	O-220F 2SD2061 O-220F 2SD2061 2sD2061 transistor transistor 2sd2061 60V transistor npn ic2a

2SB1371 Abstract: 2SD2064 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2064 APPLICATIONS	Original	PDF	2SB1371 -120V 2SD2064 -120V; -20mA; 2SB1371 2SD2064
2SD2067 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 0.7 ue pl d in an c se ed lud pl vi an m m es	Original	PDF	2002/95/EC) 2SD2067 2SD2067
2SB1372 Abstract: 2SD2065 Text: Power Transistors 2SB1372 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2065 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –140 V Collector to emitter voltage	Original	PDF	2SB1372 2SD2065 2SB1372 2SD2065
2SD2060 Abstract: 2SB1368 Text: SavantIC Semiconductor Product Specification 2SD2060 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25 )	Original	PDF	2SD2060 O-220F 2SB1368 O-220F) 2SD2060 2SB1368
2SB1371 Abstract: 2SD2064 Text: SavantIC Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS ·For high power amplification PINNING	Original	PDF	2SB1371 2SD2064 -20mA 2SB1371 2SD2064
2SD2061 Abstract: 2SB1369 transistor 2sd2061 IC vertical monitor Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type 2SD2061	Original	PDF	2SB1369 -180V -50mA) 2SD2061 -10mA; -50mA -200V; 2SD2061 2SB1369 transistor 2sd2061 IC vertical monitor
2SB1373 Abstract: 2SD2066 S1113 Text: Power T ransistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2066 U n it: mm 4.7max. - • Features • V ery good linearity of DC c u rre n t gain 2.1» .¡.s■ tir r t Iife	OCR Scan	PDF	2SB1373 2SD2066 Q01b31Q 2SB1373 2SD2066 S1113
2SD2061 Abstract: 2SB1187 2SB1187 transistor transistor 2sd2061 Text: h 7 > '/ 7 ^ /Transistors 2SD2061 2 S D 2 0 6 1 h* îè§î :7<>U/”^ npn ^7>v7^ Freq. Power Am p. Triple Diffused Planar N P N S ilicon Transistor ^ JB ^ tiiiil/D im en sio n s Unit: mm 1) V c e (sat) VCE(sat)=0.3V (Typ.) Ic / I b = 2 A /0 .2 A 2) S M â t « » « h FE	OCR Scan	PDF	2SD2061 2SB1187 A/02A 2SD2061 2SB1187 2SB1187 transistor transistor 2sd2061
transistor D304 Abstract: D304 TRANSISTOR 2sd2061 D304 diode d304 Text: 2SD1957 2SD2061 Transistors 2SD1957 • F e a tu re s 1 H igh D C current gain. 1 6 0 — 500) 2 ) Low VcE(sat). (Typ. 0 .2 V at Ic /Ib = 3 / 0 .3 A ) 3 ) P c=»30W . (T c — 2 5 'C ) 4 ) W ide S O A (safe operating area). 5 ) Built-in dam p e r diode.	OCR Scan	PDF	2SD1957 2SD2061 2SD1957 T0220FP 100ms 94L-1016-D304) transistor D304 D304 TRANSISTOR 2sd2061 D304 diode d304
251C Abstract: 2SB1372 2SD2065 Text: P o w e r T ra n s is to rs — 2SD2065 b q 3 2 flS4 o o n a s M PAN ASO NIC mi m p n c b INDL/ELEK SEM I 2SD2065 bT E D Silicon T rip le -D iffu se d P lanar Type Package Dim ensions High Pow er Am plifier Com plem entary Pair with 2SB1372 U n it ^ mm 5.2m ax.	OCR Scan	PDF	QD11354 2SD2065 2SD2065 2SB1372 1135b 00x2iâ 251C 2SB1372

Privacy Settings

2SD206 Search Results

2SD206 Price and Stock

Panasonic Electronic Components 2SD20640S

Panasonic Electronic Components 2SD20670RA

ROHM Semiconductor 2SD2061

ROHM Semiconductor 2SD2061E

2SD206 Datasheets (90)

2SD206 Datasheets Context Search

2SD2060

2SB1373

2SD2061

2SD2067

2SD2067

Untitled

2SD2066

2SD2068

2SD2061

Untitled

Untitled

2SD2066

2SD2061

2SD2061

2SB1371

2SD2067

2SB1372

2SD2060

2SB1371

2SD2061

2SB1373

2SD2061

transistor D304

251C