2SB817
Abstract: 2SD1047 2SB817 2SD1047 2sd1047 equivalent 2SD1047F 4017 12AAF
Text: Ordering number:ENN680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Package Dimensions unit:mm 2022A [2SB817/2SD1047] 15.6 14.0 3.2 3.5 4.8 2.0 1.2 15.0 20.0 • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .
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ENN680F
2SB817/2SD1047
40V/12A
2SB817/2SD1047]
2SB817
2SD1047.
2SD1047
2SB817 2SD1047
2sd1047 equivalent
2SD1047F
4017
12AAF
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2sd1047 equivalent
Abstract: 2SB817 2SD1047 2SB817 2SD1047
Text: Inchange Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
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2SB817
2SD1047
40V/12A
2sd1047 equivalent
2SB817
2SD1047
2SB817 2SD1047
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2sd1047 equivalent
Abstract: transistor 2sd1047 202327-62 2SB817 2SD1047 SC-65
Text: 2SD1047 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SB817 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2SD1047
SC-65
2SB817
2sd1047 equivalent
transistor 2sd1047
202327-62
2SB817
2SD1047
SC-65
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transistor 2sb817
Abstract: 2SB817 2SD1047 SC-65
Text: 2SB817 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SD1047 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage
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2SB817
SC-65
2SD1047
Curr00
transistor 2sb817
2SB817
2SD1047
SC-65
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2SD1047
Abstract: 2sd1047 equivalent 2SB817 2SD1047 2SB817
Text: SavantIC Semiconductor Product Specification 2SD1047 Silicon NPN Power Transistors DESCRIPTION •Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SD1047
2SB817
2SD1047
2sd1047 equivalent
2SB817 2SD1047
2SB817
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2SB817
Abstract: 2sd1047
Text: Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions • Capable of being mounted easily because of onepoint fixing type plastic molded package Interchangeable with TO-3 .
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2SB817/2SD1047
40V/12A
2SB817/2SD1047]
2SB817
2SD1047.
2sd1047
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2SB817
Abstract: 2SD1047 12AAF
Text: SavantIC Semiconductor Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1047 APPLICATIONS ·140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
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2SB817
2SD1047
40V/12A
2SB817
2SD1047
12AAF
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transistor 2sb817
Abstract: transistor 2sd1047 2sd1047 equivalent transistor 10mhz 60w transistor pnp 1a 2SD1047 DATA SHEET 2SB817 2SD1047 161 TRANSISTOR
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB817 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047
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2SB817
-140V
2SD1047
transistor 2sb817
transistor 2sd1047
2sd1047 equivalent
transistor 10mhz 60w
transistor pnp 1a
2SD1047 DATA SHEET
2SB817
2SD1047
161 TRANSISTOR
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2SB817
Abstract: 12AAF 2SD1047 DATA SHEET 2SD1047
Text: JMnic Product Specification 2SB817 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1047 APPLICATIONS ・140V/12A AF 60W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter
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2SB817
2SD1047
40V/12A
2SB817
12AAF
2SD1047 DATA SHEET
2SD1047
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2SB817 2SD1047
Abstract: 2SB817 2SD1047
Text: Ordering number : ENN680F SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features • Capable of being mounted easily because of one-point fixing type plastic molded package
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ENN680F
2SB817/2SD1047
40V/12A
2SB817
2SD1047.
2SB817 2SD1047
2SD1047
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2sd1047
Abstract: transistor 2sd1047 2SD1047 transistor
Text: 2SD1047 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured
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2SD1047
2SD1047
transistor 2sd1047
2SD1047 transistor
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transistor c4467
Abstract: mosfet a1694 C4467
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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MT-200
2SA1694/2SC4467
A1694/C4467
2SA1694
2SC4467
2SC4467
2SA1264/2SC3181
MJ2955
transistor c4467
mosfet a1694
C4467
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transistor 2SB618
Abstract: 3A/fllnm 80
Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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2SA733
2SJ74
2SK170
2SJ76
2SK213
2SJ77
2SK214
2SJ103
2SK246
2SJ109
transistor 2SB618
3A/fllnm 80
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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transistor 2sd1047
Abstract: 2SB817 2sd1047 605K transistor 1047 2SB817 2SD1047 2sb transistor transistor 2sb817 817 c w
Text: O rdering num ber: EN 680F 9 i 2SB817/2SD1047 N0.68OF 2SB817 : PNP Epitaxial P lanar Silicon Transistor 2SD1047 : NPN Triple Diffused Planar Silicon Transistor I 140V/12A, AF 60W Output Applications F e a tu re s • Capable of being mounted easily because of one-point fixing type plastic molded package
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2SB817/2SD1047
2SB817
2SD1047
40V/12A,
2SB817
2SD1047.
00S0D02
2SD1047
17/2S
transistor 2sd1047
605K
transistor 1047
2SB817 2SD1047
2sb transistor
transistor 2sb817
817 c w
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3B817
Abstract: 2SB817 2SD1047 transistor 2sd1047 2SB817 2SD1047
Text: Ordering number: EN 680F 2SB817/2SD1047 2SB817 : P N P Ep itax ial Plan ar Silicon Transistor 2SD1047 : N P N Triple Diffused Plan ar Silicon Transistor 140V/12A, AF 60W Output Applications F e atu re s •Capable of being mounted easily because of one-point fixing type plastic molded package
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2SB817/2SD1047
2SB817
2SD1047
40V/12A,
2SB817
2SD1047.
3B817
2SD1047
transistor 2sd1047
2SB817 2SD1047
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2SB817
Abstract: 2SD1047 2s8817 transistor 2sd1047 transistor 2sb817
Text: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SB817 2SB817 transistor is designed for use in general purpose power amplifier,application FEATURES: * Collector-Emitter Voltage V CE0= 140V Min * DC Current Gain hFE= 60-200@ lc= 1.0A * Complement to 2SD1047
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2SB817
2SD1047
2SD1047
2s8817
transistor 2sd1047
transistor 2sb817
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2SD1046
Abstract: 2SB514
Text: SAfiYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.
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2SC2078
O-220
27MHz
T0-220
MT930303TR
2SD1046
2SB514
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2SB511
Abstract: 2SC2078 2SC4030 2SA1011 2SC2344 2SC4031 2SC4493 2SC4572 2SC4578 2SC4579
Text: SANYO Large-signal Transistors For high-frequency, high-voltage and general purpose use We have other large-signal transistors which were not included in any classified types nor packages in this document. They are for high frequency, high voltage and general purpose use, and are shown below.
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2SC2078
O-220
27MHz
tag75
2SD895
2SB776
2SD896
2SB816
2SD1046
2SB817
2SB511
2SC4030
2SA1011
2SC2344
2SC4031
2SC4493
2SC4572
2SC4578
2SC4579
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jc 817
Abstract: 2SB811 2SD1021 2SD1032 2SD1046 2SD1047 2SD1048
Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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2sd1068
Tc-25
jc 817
2SB811
2SD1021
2SD1032
2SD1046
2SD1047
2SD1048
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audio amplifier POWER TRANSISTORS
Abstract: 2sc3807 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SB511 2SK1840 audio power amplifier
Text: Continued from previous page Absolute maximum ratings Package Device tSfP I Applications VCBO VCEO Ve» W V) « •C ; m w m I I Electrical characteristics (Tt = 25 ”C) i Icbo m u Vcb max (jiA) V » m [¡G B O *>FE # Vce *te I te hfE I Vce (mA) (V)
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2SB632K
T0126
2SD612K
2SA1692*
2SC3807
2SC3808
2SB511
2SD325
2SB514
audio amplifier POWER TRANSISTORS
2SK669
mosfet analog switch
500 W POWER AMPLIFIER
2SA1692
2SA1763
2SK1840
audio power amplifier
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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